Solid-State Electronics

Solid-State Electronics, Vol.52, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (25 articles)

1115 - 1126	Impact strain engineering on gate stack quality and reliability Claeys C, Simoen E, Put S, Giusi G, Crupi F
1127 - 1139	ESD protection design for I/O libraries in advanced CMOS technologies Semenov O, Somov S
1140 - 1144	A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications Chen SM, Fang YK, Yeh WK, Lee IC, Chiang YT
1145 - 1148	Electrical properties of Pi-conjugated Fe-TPP molecular solar cell device Aziz MS
1149 - 1153	Synthesis and luminescent properties of ternary complexes EuXLa1-X(TTA)(3)Dipy Lv YG, Li QP, Zhang YY, Han YZ, Liu H, Wang GY, Li JL, Wu DM, Yang ZW, Wang LX, Xie J
1154 - 1156	High light output intensity of titanium dioxide textured light-emitting diodes Huang KC, Lan WH, Huang KF, Lin JC, Cheng YC, Lin WJ, Pan SM
1157 - 1161	Mechanical, theoretical and dielectric studies on ferroelectric lithium ammonium sulphate (LAS) single crystals Krishnan S, Raj CJ, Robert R, Ramanand A, Das SJ
1162 - 1169	Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes - A new approach Manifacier JC
1170 - 1176	Characterization of poly-Si TFT variation using interdigitated method Huang SC, Tai YH
1177 - 1181	Possible new mechanism of chip latent damage due to ESD Tworzydlo WW, Rodov V
1182 - 1187	STI-to-gate distance effects on flicker noise characteristics in 0.13 mu m CMOS Chan CY, Huang YC, Chen JW, Hsu SSH, Juang YZ
1188 - 1192	T-shaped shallow trench isolation with unfilled floating void Irrera F, Puzzilli G, Ricci L, Russo F, Stirpe F
1193 - 1196	Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes Lee HC, Park JB, Bae JW, Thuy PTT, Yoo MC, Yeom GY
1197 - 1201	Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs Aleksic SM, Jaksic AB, Pejovic MM
1202 - 1206	Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs Zeng YP, Ostinelli O, Liu HG, Bolognesi CR
1207 - 1216	Investigation of EMI-induced noise spectrum in an enhancement-type MOSFET Tsai HC, Wang KC
1217 - 1220	Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G
1221 - 1224	Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique Toko K, Kanno H, Kenjo A, Sadoh T, Asano T, Miyao M
1225 - 1231	A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode Guo JC, Tan TY
1232 - 1236	Influence of inhomogeneous contact in electrical properties of 4H-SiC based Schottky diode Karoui MB, Gharbi R, Alzaied N, Fathallah M, Tresso E, Scaltrito L, Ferrero S
1237 - 1243	Investigation of deep level defects in copper irradiated bipolar junction transistor Madhu KV, Kumar R, Ravindra M, Damle R
1244 - 1248	Investigation of 65 nm CMOS transistor local variation using a FET array Xu YZ, Chen CS, Watt JT
1249 - 1255	A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET Suh CH
1256 - 1259	Thermal stability of C-doped GaAs/AlAs DBR structures Liang MS, Bullough TJ, Joyce TB
1260 - 1263	Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis Kim S, Xuan Y, Ye PD, Mohammadi S, Lee SW