Solid-State Electronics

Solid-State Electronics, Vol.45, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

1521 - 1524	Experimental evaluation of device degradation subject to oxide soft breakdown Zhang J, Yuan JS, Ma Y, Chen Y, Oates AS
1525 - 1530	A new analytical model for amorphous-silicon thin-film transistors including tail and deep states Colalongo L
1531 - 1536	Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal Chen YC, Lee CY, Hwu JG
1537 - 1547	Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data Zhang Q, Liou JJ, McMacken J, Thomson JR, Stiles K, Layman P
1549 - 1557	Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon Brody J, Rohatgi A
1559 - 1563	Forward characteristics of P+PN+ and P+NN+ diodes on 6H-SiC Zhang Q, Sudarshan TS
1565 - 1570	Effect of annealing on electrical properties of Pt/beta-SiC contact Na HJ, Jeong JK, Um MY, Kim BS, Hwang CS, Kim HJ
1571 - 1576	Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor Kim JH, Song JI
1577 - 1589	High-Q microphotonic electro-optic modulator Cohen DA, Hossein-Zadeh M, Levi AFJ
1591 - 1595	Insight into the relationship between hot electron degradation and substrate current in sub-0.1 mu m technologies Ghetti A, Bude J, Liu CT
1597 - 1605	Issues concerning the preparation of ohmic contacts to n-GaN Pelto CM, Chang YA, Chen Y, Williams RS
1607 - 1611	Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon Balagurov LA, Bayliss SC, Andrushin SY, Orlov AF, Unal B, Yarkin DG, Petrova EA
1613 - 1624	Comparison of the effects of H-2 and D-2 plasma exposure on AlGaAs/GaAs high electron mobility transistors Luo B, Ren F, Lee KP, Pearton SJ, Wu CS, Kopf RF, Johnson D, Sasserah JN
1625 - 1638	Comparison of the effects of H-2 and D-2 plasma exposure on GaAs MESFETs Luo B, Ren F, Lee KP, Pearton SJ, Wu CS, Johnson D, Sasserath JN
1639 - 1644	Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs Hobson WS, Lopata J, Chirovsky LMF, Chu SNG, Dang G, Lou B, Ren F, Tayahi M, Kilper DC, Pearton SJ
1645 - 1652	Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator Karmalkar S, Mishra UK
1653 - 1657	On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE
1659 - 1664	Design of single and multiple zone junction termination extension structures for SiC power devices Sheridan DC, Niu GF, Cressler JD
1665 - 1671	Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu JK, Kuo CH, Chen CC, Chi GC, Jou MJ
1673 - 1678	Design and analysis of a new self-aligned asymmetric structure for deep sub-micrometer MOSFET Choi CS, Kim KW, Choi WY
1679 - 1682	Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces Lay TS, Hong M, Kwo J, Mannaerts JP, Hung WH, Huang DJ
1683 - 1686	Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs Lee JW, Jeon MH, Devre M, Mackenzie KD, Johnson D, Sasserath JN, Pearton SJ, Ren F, Shul RJ
1687 - 1702	Minority carrier transport in GaN and related materials Chernyak L, Osinsky A, Schulte A
1703 - 1703	Thermal analysis of solid-state devices and circuits: an analytical approach (vol 44, pg 1789, 2000) Rinaldi N