Solid-State Electronics

Solid-State Electronics, Vol.46, No.9 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (34 articles)

1251 - 1257	A Schottky diode clamped merged drain CMOS structure Huang FJ, O K
1259 - 1263	Effects of surface oxide on SiGe/Si diode characteristics Hirose F
1265 - 1272	Analytical model for extrinsic time-dependent dielectric breakdown of thin gate oxide Katto H
1273 - 1281	Investigation of interface charges at the heterojunction discontinuity in HBT devices de la Fuente JG, Krozer V
1283 - 1287	Analysis of reverse current-voltage characteristics of Schottky diodes based on phonon-assisted tunneling including Frenkel emission mechanism Pipinys P, Rimeika A, Pipiniene A
1289 - 1294	A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's) Chen CY, Wang WC, Chiou WH, Wang CK, Chuang HM, Cheng SY, Liu WC
1295 - 1299	Theoretical analysis of noise transfer in wavelength converter based on cross-gain modulation in semiconductor optical amplifiers Wu SB, Sun XH, Yang C, Zhang MD
1301 - 1305	Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation Frei MR, Chiu TY, Abernathy CR, Ren F, Fullowan TR, Lothian J, Pearton SJ, Tseng B, Montgomery RK, Smith PR
1307 - 1313	Deformation of a deep-level transient spectroscopy spectrum by an inhomogeneous carrier concentration depth profile Ito A, Tokuda Y
1315 - 1324	Enhanced modelization of ion implant simulation in compound semiconductors Hernandez-Mangas JM, Enriquez L, Arias J, Jaraiz M, Bailon L
1325 - 1331	A simple approach to understanding measurement errors in the cross-bridge Kelvin resistor and a new pattern for measurements of specific contact resistivity Ono M, Nishiyama A, Toriumi A
1333 - 1338	Design and optimization of thin film fully depleted vertical surrounding gate (VSG) MOSFETs for enhanced short channel immunity Kranti A, Rashmi, Haldar S, Gupta RS
1339 - 1343	Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications Adriaensen S, Flandre D
1345 - 1349	Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions Luo B, Kim J, Mehandru R, Ren F, Lee KP, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Osinsky AV, Norris PE
1351 - 1358	A novel fabrication process for polysilicon thin film transistors with source/drain contacts formed by deposition and lift-off of highly doped layers Cuscuna M, Bonfiglietti A, Carluccio R, Mariucci L, Mecarini F, Pecora A, Stanizzi M, Valletta A, Fortunato G
1359 - 1365	Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs Luo B, Ren F, Wu CS, Pearton SJ, Abernathy CR, MacKenzie KD
1367 - 1373	Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability Lobbins JM, Pearton SJ, Ren F
1375 - 1380	Electrical characteristics of metal-oxide-semiconductor capacitors on plasma etch-damaged silicon carbide Koo SM, Lee SK, Zetterling CM, Ostling M
1381 - 1387	Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices Nicolett AS, Martino JA, Simoen E, Claeys C
1389 - 1394	The influence of InGaP barrier layer on the characteristics of 1.3 mu m strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes Lee CY, Jiang WJ, Wu MC, Ho WJ
1395 - 1398	An improved model for substrate current of submicron MOSFETs Gao X, Liou JJ, Bernier J, Croft G
1399 - 1403	Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD Chang KM, Cheng CC, Lang CC
1405 - 1409	Low-temperature electrical characterizations of InAs1-x-ySbyPx photodiodes fabricated by liquid-phase epitaxy Uen WY, Liao SM, Lin CT, Wu CH
1411 - 1416	Intrinsic and extrinsic photoresponse of Mo/n-Si/Mo structures with wide electrode gap Kobayashi K, Niemcharoen S, Supadech S, Yasumura Y, Sato K
1417 - 1420	Structural and transport properties of CdS films deposited on flexible substrates Shur MS, Rumyantsev S, Gaska R, Wei BQ, Vajtai R, Ajayan PM, Sinius J
1421 - 1425	Trade off between polysilicon film quality and thin film transistor operational amplifier DC gain Afentakis T, Hatalis M
1427 - 1431	Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS
1433 - 1440	Reduction of the Schottky barrier height on silicon carbide using Au nano-particles Lee SK, Zetterling CM, Ostling M, Aberg I, Magnusson MH, Deppert K, Wernersson LE, Samuelson L, Litwin A
1441 - 1444	A comparative study of surface passivation on AlGaN/GaN HEMTs Lu W, Kumar V, Schwindt R, Piner E, Adesida I
1445 - 1451	Noise-gain tradeoff in RF SiGeHBTs Niu GF, Cressler JD, Zhang SM, Joseph A, Harame D
1453 - 1457	Comparison of the effects of deuterated SiNx films on GaN and GaAs rectifiers Luo B, Baik K, Ren F, Pearton SJ, MacKenzie KD
1459 - 1462	Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation Baik KH, Luo B, Kim J, Pearton SJ, Ren F
1463 - 1466	Determination of deep trap concentration at channel-substrate interface in GaAs MESFET using sidegating measurements Khuchua NP, Khvedelidze LV, Gorev NB, Privalov EN, Shur MS
1467 - 1469	Observation of inversion behavior in n-type GaN planar metal-insulator-semiconductor capacitor Irokawa Y, Nakano Y