Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.20, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (48 articles)

102 - 102	Medard W. Welch award [Anonymous]
1511 - 1516	Growth behaviors of low-pressure metalorganic chemical vapor deposition aluminum silicate films deposited with two kinds of silicon sources: Hexamethyidisilazane and tetraethyl orthosilicate Kuo DH, Chuang PY
1517 - 1524	Growth-controlled cubic zirconia microstructure in zirconia-titania nanolaminates DeLoach JD, Aita CR, Loong CK
1525 - 1531	Ion-enhanced chemical etching of ZrO2 in a chlorine discharge Sha L, Cho BO, Chang JP
1532 - 1535	Annealing behavior of a Cs2O/Cs2O2/GaAs(110) surface studied by electron spectroscopy Wu JX, Li FQ, Zhu JS, Ji MR, Ma MS
1536 - 1556	Semiempirical profile simulation of aluminum etching in Cl-2/BCl3 plasma Cooperberg DJ, Vahedi V, Gottscho RA
1557 - 1565	Transition layers in metal bilayers produced by pulsed laser deposition in vacuum Tselev A, Gorbunov A, Pompe W
1566 - 1573	Generating high-efficiency neutral beams by using negative ions in an inductively coupled plasma source Samukawa S, Sakamoto K, Ichiki K
1574 - 1581	Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma Min JH, Hwang SW, Lee GR, Moon SH
1582 - 1586	Thermal decomposition pathway and desorption study of isopropanol and tert-butanol on Si(100) Kim J, Kim K, Yong K
1587 - 1591	Optimized oxygen plasma etching of polyimide films for low loss optical waveguides Agarwal N, Ponoth S, Plawsky J, Persans PD
1592 - 1596	Two-directional N-2 desorption in thermal dissociation of N2O on Rh(110), Ir(110), and Pd(110) at low temperatures Horino H, Rzeznicka I, Kokalj A, Kobal I, Ohno Y, Hiratsuka A, Matsushima T
1597 - 1602	Giant polarization in organic heterostructures Thurzo I, Kampen TU, Zahn DRT
1603 - 1610	Diode laser measurements of CFx species in a low-pressure, high-density plasma reactor Littau ME, Sowa MJ, Cecchi JL
1611 - 1620	X-ray photoelectron spectroscopy study of two nitrogen-containing polymer surfaces metallized by nickel Bebin P, Prud'homme RE
1621 - 1631	Performance characteristics of single-stage disk-type drag pump Heo JS, Hwang YK
1632 - 1638	W and WC layers deposition by shielded inductively coupled plasma source Colpo P, Meziani T, Sauvageot P, Ceccone G, Gibson PN, Rossi F, Monge-Cadet P
1639 - 1643	Structure and properties of carbon nitride thin films synthesized by nitrogen-ion-beam-assisted pulsed laser ablation Chen ZY, Zhao JP, Yano T, Shinozaki T, Ooie T
1644 - 1646	Structural study on (CH3)(2)S/Cu(100) by near edge x-ray absorption fine structure and x-ray photoelectron spectroscopy Yagi S, Nakano Y, Ikenaga E, Sardar SA, Syed JA, Soda K, Hashimoto E, Tanaka K, Taniguchi M
1647 - 1652	Helium permeation through a-C : H films deposited on polymeric substrates Valentini L, Bellachioma MC, Lozzi L, Santucci S, Kenny JM
1653 - 1658	Abnormal room-temperature oxidation of silicon in the presence of copper Hinode K, Takeda K, Kondo S
1659 - 1662	Effects of bridge pattern on performance of YBaCuO microbolometers Laou P, Phong LN
1663 - 1666	Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon Clark MH, Jones KS, Stevie FA
1667 - 1675	Recommended practices for measuring and reporting outgassing data Redhead PA
1676 - 1681	Chemical structure of ultrathin SiO2 film with nitrogen incorporated by remote nitrogen plasma Cho MH, Roh YS, Whang CN, Jeong K, Ko DH, Yoo JY, Lee NI, Fujihara K
1682 - 1689	Microstructure, chemistry, and tribological performance of MoSx/WSey co-sputtered composites Savan A, Haefke H, Simmonds MC, Constable CP
1690 - 1698	Reactivity of Cu with poly(tetrafluoroethylene) and poly(vinyl chloride): Effect of pre- and post-metallization modification on the metal/polymer interface Perry CC, Torres J, Carlo SR, Fairbrothera DH
1699 - 1703	Reactive sputter deposition of tungsten nitride thin films Baker CC, Shah SI
1704 - 1715	High-rate deposition of a-SiNx : H for photovoltaic applications by the expanding thermal plasma Kessels WMM, Hong J, van Assche FJH, Moschner JD, Lauinger T, Soppe WJ, Weeber AW, Schram DC, van de Sanden MCM
1716 - 1721	Temperature dependence of oxide decomposition on titanium surfaces in ultrahigh vacuum Mizuno Y, King FK, Yamauchi Y, Homma T, Tanaka A, Takakuwa Y, Momose T
1722 - 1732	Approach for control of high-density plasma reactors through optimal pulse shaping Vincent TL, Raja LL
1733 - 1737	Advantages of laser-acoustical leak testing for construction and operation of low-temperature installations and superconducting experiments Herz W
1738 - 1743	Tribological behavior of alumina doped zinc oxide films grown by pulsed laser deposition Prasad SV, Nainaparampil JJ, Zabinski JS
1744 - 1748	Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films Ruddell DE, Stoner BR, Thompson JY
1749 - 1754	Effects of deposition temperature on structural defect and electrical resistivity in heteroepitaxial La0.5Sr0.5CoO3/CeO2/YSZ/Si films Chen CH, Saiki A, Wakiya N, Shinozaki K, Mizutani N
1755 - 1758	Effect of substrate position in i-ZnO thin-film formation to Cu(In,Ga)Se-2 solar cell Yamaguchi T, Tanaka T, Yoshida A
1759 - 1768	Ion energy distributions versus frequency and ion mass at the rf-biased electrode in an inductively driven discharge Abraham IC, Woodworth JR, Riley ME, Miller PA, Hamilton TW, Aragon BP
1769 - 1773	Effects of plasma treatment on the properties of Cu/Ta/fluorinated amorphous carbon (a-C : F)/Si multilayer structure Yang SH, Kim H, Park JW
1774 - 1778	Quantitative study of ion bombardment induced phase transformation of cubic boron nitride by reflective electron energy-loss spectroscopy Hui YY, Wong KW, Lau WM
1779 - 1783	Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition Li BS, Liu YC, Zhi ZZ, Shen DZ, Zhang JY, Lu YM, Fan XW, Kong XG
1784 - 1786	Simple method for cleaning gallium nitride (0001) Machuca F, Liu Z, Sun Y, Pianetta R, Spicer WE, Pease RFW
1787 - 1795	Neutral gas temperatures measured within a high-density, inductively coupled plasma abatement device Tonnis EJ, Graves DB
1796 - 1801	Epitaxial growth and dielectric properties of functionally graded (Ba1-xSrx)TiO3 thin films with stoichimetric variation Zhu X, Chan HLW, Choy CL, Wong KH
1802 - 1807	Improvement of oxygen barrier of polyethylene terepthalate film by plasma-source ion implantation of carbon Yoshida M, Tanaka T, Shinohara M, Watanabe S, Lee JW, Takagi T
1808 - 1814	Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma Lee GR, Hwang SW, Min JH, Moon SH
1815 - 1823	Thermal stability of arc evaporated high aluminum-conteht Ti1-xAlxN thin films Horling A, Hultman L, Oden M, Sjolen J, Karlsson L
1824 - 1827	Multiple phase structures of Hf silicide precipitated from Hf silicate: An atomic view Lee JH, Ichikawa M
1828 - 1830	Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)(2) and Ti(i-OPr)(4) Lee JH, Cho YJ, Min YS, Kim D, Rhee SW