L1 - L3 |
Fabrication of 5 nm gap pillar electrodes by electron-beam Pt deposition Gazzadi GC, Frabboni S |
339 - 343 |
Fabrication of a nanosized current-driven spin valve device using proximity correction in electron-beam lithography Yi HJ, Nguyen THY, Chang JY, Shin KH |
344 - 348 |
Fourier transform infrared spectroscopy studies of water-polymer interactions in chemically amplified photoresists McDonough LA, Chikan V, Kim ZH, Leone SR, Hinsberg WD |
349 - 353 |
Diffusion of dopants in highly (similar to 10(20) CM-3) n- and p-doped GaSb-based materials Dier O, Grau M, Lauer C, Lin C, Amann MC |
354 - 358 |
Micropatterning organosilane self-assembled monolayers with plasma etching and backfilling techniques Harant AW, Whipple SG, Douglas K, Bowman CN |
359 - 369 |
Fabrication and characterization of p-type silicon field-emitter arrays for lithography Teepen TF, van Veen AHV, van't Spijker H, Steenbrink SWHK, van Zuuk A, Heerkens CTH, Wieland MJ, van Druten NJ, Kruit P |
370 - 374 |
Performance improvement of diamondlike carbon membrane masks for electron projection lithography Amemiya I, Yamashita H |
375 - 379 |
Three-dimensional multilayered microstructure fabricated by imprint lithography Ooe H, Morimatsu M, Yoshikawa Y, Kawata H, Hirai Y |
380 - 388 |
Shot noise power spectrum of planar field emitters Rangaswamy K, Cahay M, Jensen KL |
389 - 394 |
Reduction of plasma-induced damage in SiO2 films during pulse-time-modulated plasma irradiation Ishikawa Y, Okigawa M, Samukawa S, Yamasaki S |
395 - 405 |
Effect of plasma interactions with low-kappa films as a function of porosity, plasma, chemistry, and temperature Worsley MA, Bent SF, Gates SM, Fuller NCM, Volksen W, Steen M, Dalton T |
406 - 416 |
Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices Farrell HH, LaViolette RA |
417 - 424 |
Edge effects characterization of phase shift mask Chua GS, Tay CJ, Quan CH, Lin QY |
425 - 432 |
Effect of sidewall properties on the bottom microtrench during SiO2 etching in a CF4 plasma Min JH, Lee GR, Lee JK, Moon SH, Kim CK |
433 - 436 |
Effect of electric field on chemical bonds of carbon-doped silicon oxide as evidenced by in situ Fourier transform infrared spectroscopy Yiang KY, Yoo WJ, Krishnamoorthy A |
437 - 442 |
In situ fabrication of metal gate/high-kappa dielectric gate stacks using a potential lower cost front-end process for the sub-90 nm CMOS technology node Damjanovic D, Singh R, Poole KF |
443 - 448 |
Surface morphology of epitaxial LiF(110) and CaF2(110) layers Sugawara A, Mae K |
449 - 457 |
Effects of B content on microstructure and mechanical properties of nanocomposite-Ti-B-x-N-y thin films Lu YH, Sit P, Hung TF, Chen HD, Zhou ZF, Li KY, Shen YG |
458 - 462 |
Synthesis of multiwalled carbon nanotubes using C14H10O7W catalyst Huh Y, Lee JY, Choi SK, Lee CJ |
463 - 467 |
Copper diffusion barrier properties of CVD boron carbo-nitride Engbrecht ER, Sun YM, Junker KH, White JM, Ekerdt JG |
468 - 474 |
Approach to interface roughness of silicide thin films by micro-Raman imaging Zhao FF, Sun WX, Feng YP, Zheng JZ, Shen ZX, Pang CH, Chan LH |
475 - 479 |
Effects of Pd activation on the self annealing Of electroless copper deposition using Co(II)-ethylenediamine as a reducing agent Lee CH, Kim JJ |
480 - 485 |
Mechanism of simultaneous formation of refractory-metal free C40 and C49TiSi(2) induced by Q-switched Nd : Yttrium-aluminum-garnet laser irradiation Tan SC, See A, Yu T, Shen ZX, Lin J |
486 - 494 |
Effects of nickel and titanium thickness on nickel/titanium ohmic contacts to n-type silicon carbide Park JH, Holloway PH |
495 - 498 |
Fermi level pinning on Si0.83Ge0.17 surface by inductively coupled plasma treatment Kim IG, Choi KJ, Lee JL |
499 - 506 |
Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN Hansen PJ, Vaithyanathan V, Wu Y, Mates T, Heikman S, Mishra UK, York RA, Schlom DG, Speck JS |
507 - 512 |
Nanoimprint and nanocontact technologies using hydrogen silsesquioxane Nakamatsu K, Watanabe K, Tone K, Namatsu H, Matsui S |
513 - 518 |
Fabrication of polysilicon thin-film transistors using nickel/copper double-layer-induced lateral crystallization Chen CC, Yang BC, Lee SC |
519 - 524 |
Investigation of a nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition Fazio E, Barletta E, Barreca F, Neri F, Trusso S |
525 - 529 |
Influence of electric field intensity on the copper catalyst-mediated crystallization of amorphous silicon Kim YB, Kim CH, Kim HC, Kim YW, Jeon HP, Choi DK |
530 - 533 |
Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition method Baik JM, Lee JL |
534 - 539 |
Study of neutral-beam etching conditions for the fabrication of 7-nm-diameter nanocolumn structures using ferritin iron-core masks Kubota T, Baba T, Kawashima H, Uraoka Y, Fuyuki T, Yamashita I, Samukawa S |
540 - 546 |
Process method to suppress the effect of phase errors in alternating phase shift masks Singh N, Roy MM, Mehta SS, Adeyeye AO |
547 - 553 |
Evaluation of the effectiveness of H-2 plasmas in removing boron from Si after etching of HfO2 films in BCl3 plasmas Wang C, Donnelly VM |
554 - 558 |
Combined in situ and ex situ analysis of hydrogen radical and thermal removal of native oxides from (001) GaAs Eyink KG, Grazulis L |
559 - 562 |
Ideally ordered 10 nm channel arrays grown by anodization of focused-ion-bearn patterned aluminum Peng CY, Liu CY, Liu NW, Wang HH, Datta A, Wang YL |
563 - 565 |
Carbon nanotube field emitter manufactured by anodic-alumina template and Ni-CNT composite plating Kang H, Lee S, Lee H |
566 - 569 |
Dielectric properties enhancement of ZrO2 thin films induced by substrate biasing Huang AP, Chu PK, Yan H, Zhu MK |
570 - 574 |
Optical measurement and fabrication from a Morpho-butterfly-scale quasistructure by focused ion beam chemical vapor deposition Watanabe K, Hoshino T, Kanda K, Haruyama Y, Kaito T, Matsui S |
575 - 584 |
Development and characterization of silane antisticking layers on nickel-based stamps designed for nanoimprint lithography Keil M, Beck M, Ling TGI, Graczyk M, Montelius L, Heidari B |
585 - 587 |
Gas-assisted focused ion beam etching characteristics of niobium Fu XL, Li PG, Jin AZ, Zhang HY, Yang HF, Tang WH |
588 - 593 |
Microstructure and mechanical properties of superhard Ti-B-C-N films deposited by dc unbalanced magnetron sputtering. Park IW, Kim KH, Kunrath AO, Zhong D, Moore JJ, Voevodin AA, Levashov EA |
594 - 598 |
Electronic defect states at annealed metal/4H-SiC interfaces Tumakha S, Goss SH, Brillson LJ, Okojie RS |
599 - 611 |
Influence of scaling effects on designing for power efficiency of a micropreconcentrator Cook KA, Sastry AM |
612 - 617 |
Three-dimensional time-resolved analysis for the discharge of plasma display panel using the scanned-point detecting system Choi HY, Lee SH, Lee SG, Seo JH |
620 - 620 |
Papers from the 17th International Vacuum Nanoelectronics Conference -11-16 July 2004, Cambridge, Massachusetts - Preface Akinwande AI, Kymissis I, Hong CY, Chen LY |
621 - 631 |
Time dependent models of field-assisted photoemission Jensen KL, Feldman DW, O'Shea PG |
632 - 635 |
Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter Smith RC, Carey JD, Forrest RD, Silva SRP |
636 - 639 |
Space-charge effects of electrons and ions on the steady states of field-emission-limited diodes Lin MC |
640 - 644 |
Electron optics and electrical studies of a single Spindt-type field emitter Desieres Y, Nicolas P, Sermet F, Geffraye F, Gidon S |
645 - 648 |
Numerical study of the electrostatic field gradients present in various planar emitter field emission configurations relevant to experimental research Gonzalez-Berrios A, Piazza F, Morell G |
649 - 656 |
Ring-shaped images as a result of nonuniform field emission from capped carbon nanotubes Filip LD, Nicolaescu D, Tanemura M, Kanemaru S, Itoh J |
657 - 664 |
Field electron emission from two-dimensional electron gas Filip V, Nicolaescu D, Wong H, Nagao M, Chu PL |
665 - 670 |
Field emission under extreme conditions from carbon nanopearls in a foam-like arrangement Levesque A, Vincent P, Binh VT, Guillot D, Brookes MD |
671 - 675 |
Scanning anode field emission microscopy analysis for studies of planar cathodes Semet V, Mouton R, Binh VT |
676 - 679 |
Field emission from teepee-shaped carbon nanotube bundles Busta H, Tolt Z, Montgomery J, Feinerman A |
680 - 681 |
Pulsed field emitted current from different commercial samples in the purpose of a free electron laser application Ganter R, Li K, Dehler M, Gobrecht J, Rivkin L, Wrulich A |
682 - 686 |
Characterization of an advanced high-efficiency electron emission device Negishi N, Nakada T, Sakemura K, Okuda Y, Satoh H, Watanabe A, Yoshikawa T, Ogasawara K, Koshida N |
687 - 690 |
Energy distributions of field emission electrons from silicon emitters Shimawaki H, Suzuki Y, Sagae K, Neo Y, Mimura H |
691 - 693 |
High current, high current density field emitter array cathodes Schwoebel PR, Spindt CA, Holland CE |
694 - 697 |
Regeneration of gated carbon nanotube field emission Hsu DSY, Shaw JL |
698 - 701 |
Influence of mechanical stress on electron field emission of multiwalled carbon nanotube-polymer composites Poa CHP, Smith RC, Silva SRP, Sun CQ |
702 - 706 |
Stable and high emission current from carbon nanotube paste with spin on glass Park JH, Moon JS, Han JH, Berdinsky AS, Yoo JB, Park CY, Nam JW, Park J, Lee CG, Choe DH |
707 - 717 |
Emission statistics for Si and HfC emitter arrays after residual gas exposure Nicolaescu D, Nagao M, Sato T, Filip V, Kanemaru S, Itoh J |
718 - 722 |
Uniformity measurement of electron emission from carbon nanotubes using electron-beam resist Lee JH, Lee SH, Kim WS, Lee HJ, Heo JN, Jeong TW, Choi CH, Kim JM, Park JH, Ha JS, Lee HJ, Moon JW, Yoo MA, Nam JW, Cho SH, Yoon TI, Kim BS, Choe DH |
723 - 730 |
Noise and emission characteristics of NbC/Nb field emitters Charbonnier FM, Southall LA, Mackie WA |
731 - 734 |
Ion-beam morphological conditioning of carbon field emission cathode surfaces Hunt CE, Chakhovskoi AG, Wang Y |
735 - 740 |
Observation of electron emission pattern from nanosplit emitter fabricated using beam assisted process Murakami K, Yamasaki N, Abo S, Wakaya F, Takai M |
741 - 744 |
Scanning tunneling microscopy observations of hafnium carbide thin films as a field emission material Sato T, Saida M, Horikawa K, Sasaki M, Nagao M, Kanemaru S, Matsukawa T, Itoh J, Yamamoto S |
745 - 748 |
Low temperature burnable carbon nanotube paste component for carbon nanotube field emitter backlight unit Lee S, Im WB, Kang JH, Jeon DY |
749 - 753 |
Screen printed carbon nanotube field emitter array for lighting source application Park JH, Son GH, Moon JS, Han JH, Berdinsky AS, Kuvshinov DG, Yoo JB, Park CY, Nam JW, Park JW, Lee CG, Choe DH |
754 - 758 |
Selective growth of carbon nanotubes on silicon protrusions Sato H, Hata K, Miyake H, Hiramatsu K, Saito Y |
759 - 761 |
Effect of thermal annealing on emission characteristics of nanoelectron source fabricated using beam-assisted process Murakami K, Yamasaki N, Abo S, Wakaya F, Takai M |
762 - 764 |
Influence of gas atmosphere during laser surface treatment of CNT cathode Rochanachirapar W, Murakami K, Yamasaki N, Abo S, Wakaya F, Takai M, Hosono A, Okuda S |
765 - 768 |
Laser surface treatment of carbon nanotube cathodes for field emission displays with large diagonal size Rochanachirapar W, Murakami K, Yamasaki N, Abo S, Wakaya F, Takai M, Hosono A, Okuda S |
769 - 771 |
Reduction of the work function on Mo(100) surface covered with ZrO2 Nakane H, Satoh S, Adachi H |
772 - 775 |
Fabrication and field emission characteristics of high density carbon nanotube microarrays Chuang CC, Huang JH, Lee CC, Chang YY |
776 - 780 |
High current field emission from carbon nanofiber films grown using electroplated Ni catalyst Park KH, Yim JH, Lee S, Koh KH |
781 - 785 |
Investigation of a microtriode with a planar field emitter-extractor source fabricated by direct-write nanolithography using electron beam induced deposition Sellmair J, Edinger K, Koops HWP |
786 - 792 |
Growth aspects of nanocrystalline diamond films and their effects on electron field emissions Subramanian K, Kang WP, Davidson JL, Hofmeister WH |
793 - 799 |
Effects of deposition and synthesis parameters on size, density, structure, and field emission properties of Pd-catalyzed carbon nanotubes synthesized by thermal chemical vapor deposition Wei S, Kang WP, Hofmeister WH, Davidson JL, Wong YM, Huang JH |
800 - 804 |
Edge-shaped diamond field emission arrays Takalkar RS, Davidson JL, Kang WP, Wisitsora-at A, Kerns DV |
805 - 808 |
Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated chemical vapor deposition Huang JH, Chen YS, Chuang CC, Wong YM, Kang WR |
809 - 813 |
Electron field emission from carbon nanotubes on porous alumina Lysenkov D, Abbas H, Muller G, Engstler J, Budna KP, Schneider JJ |
814 - 818 |
X-ray generation from large area carbon-based field emitters Busta H, Lesiak S, Zwicker B, Montgomery J, Wan Z, Feinerman A |
819 - 823 |
Desorption/ionization mass spetrometry on array of silicon microtips Gorecka-Drzazga A, Dziuban J, Drzazga W, Kraj A, Silberring J |
824 - 830 |
Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier Semet V, Binh VT, Zhang JP, Yang J, Khan MA, Tsu R |
831 - 835 |
High intensity pulse x-ray generation by using graphite-nanocrater cold cathode Matsumoto T, Mimura H |
836 - 839 |
Method and structure for local emission regulation and arc prevention in field emitter arrays Shaw JL, Hsu DSY |
840 - 842 |
Smith-Purcell radiation using a single-tip field emitter Neo Y, Suzuki Y, Sagae K, Shimawaki H, Mimura H |
843 - 848 |
Characterization of nano-size YVO4 : Eu and (Y, Gd)VO4 : Eu phosphom by low voltage cathodo- and photoluminescence Kang JH, Nazarov M, Bin Im W, Kim JY, Jeon DY |
849 - 852 |
Field-emission based vacuum device for the generation of terahertz waves Lin MC, Huang KH, Lu PS, Lin PY, Jao RF |
853 - 863 |
Polysilicon metal-insulator-semiconductor electron emitter Govyadinov A, Novet T, Pidwerbecki D, Ramamoorthi S, Smith J, Chen J, Otis C, Neiman D, Benning P |
864 - 867 |
Fabrication of Si field emitter array in local vacuum package Noda D, Hatakeyama M, Kyogoku M, Ikushima K, Sawada K, Ishida M |
868 - 873 |
Transistor characteristics of thermal chemical vapor deposition carbon nanotubes field emission triode Wong YM, Kang WP, Davidson JL, Hofmeister W, Wei S, Huang JH |