Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (98 articles)

1309 - 1312	Application and calibration of a quartz needle sensor for high resolution scanning force microscopy Clauss W, Zhang J, Bergeron DJ, Johnson AT
1313 - 1316	Surface structure characterization of DNA oligomer on Cu(111) surface using low temperature scanning tunneling microscopy Hamai C, Tanaka H, Kawai T
1317 - 1322	Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation Nakajima A, Nakao H, Ueno H, Futatsugi T, Yokoyama N
1323 - 1328	Fabrication of a metal nanostructure on the Si(111) surface Rogers D, Nejoh H
1329 - 1335	Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo-Si-N/SiC thin films Torri P, Hirvonen JP, Kung H, Lu YC, Nastasi M, Gibson PN
1336 - 1340	Characterization of bending in single crystal Si beams and resonators Weigold JW, Juan WH, Pang SW, Borenstein JT
1341 - 1345	In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots Lee JS, Sugou S, Ren HW, Masumoto Y
1346 - 1349	High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching Prabhakaran K, Ogino T
1350 - 1353	Low energy electron beam decomposition of metalorganic precursors with a scanning tunneling microscope at ambient atmosphere Bruckl H, Kretz J, Koops HW, Reiss G
1354 - 1360	Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases Nelson MW, Schroeder PG, Schlaf R, Parkinson BA
1361 - 1365	Fabrication of a microcavity structure with a polyimide thin film prepared by vacuum deposition polymerization Sakakibara Y, Tani T
1366 - 1370	Low voltage electron beam lithography in PMMA Olkhovets A, Craighead HG
1371 - 1379	Surface roughness development during photoresist dissolution Flanagin LW, Singh VK, Willson CG
1380 - 1384	Relations between the solubility speed and the electrical conductivity of phenol novolak polymer solutions Takeda T, Saka M
1385 - 1389	Low-stress W/Cr films for SCALPEL (R) mask scattering layers Windt DL
1390 - 1394	Microelectron gun integrating a point-source cathode Hammadi Z, Gauch M, Morin R
1395 - 1399	Low brightness and high emittance electron gun for a reducing image projection system Nakasuji M, Shimizu H
1400 - 1405	Generalization of electrostatic lens characteristics using the Picht ray trajectories Kawanami Y, Ishitani T
1406 - 1412	X-ray photoelectron spectroscopy analyses of oxide-masked organic polymers etched in high density plasmas using SO2/O-2 gas mixtures Monget C, Joubert O
1413 - 1416	Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions Pashkin YA, Pekola JP, Kuzmin LS
1417 - 1423	Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O Lu GQ, Tedder LL, Rubloff GW
1424 - 1429	Relaxation of strained Si layers grown on SiGe buffers Samavedam SB, Taylor WJ, Grant JM, Smith JA, Tobin PJ, Dip A, Phillips AM, Liu R
1430 - 1434	High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties Hugon MC, Delmotte F, Agius B, Irene EA
1435 - 1447	Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch Matsuo PJ, Standaert TEFM, Allen SD, Oehrlein GS, Dalton TJ
1448 - 1455	Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system Alberti A, La Via F, Rimini F
1456 - 1463	Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors Lin CF, Tseng WT, Feng MS, Wang YL
1464 - 1469	Study of crystal orientation in Cu film on TiN layered structures Abe K, Harada Y, Onoda H
1470 - 1476	Barrier properties of Ta-RuO2 diffusion barrier for dynamic random access memory capacitor bottom electrodes Yoon DS, Baik HK, Lee SM, Lee SI
1477 - 1481	Superlatticed negative differential-resistance heterojunction bipolar transistor Cheng SY, Tsai JH, Lin PH, Liu WC
1482 - 1484	High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy Kitada T, Nii K, Hiraoka T, Shimomura S, Hiyamizu S
1485 - 1501	Evolution of microstructure and dislocation dynamics in InxGa1-xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials Kim AY, McCullough WS, Fitzgerald EA
1502 - 1506	Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction Wu MF, Yao SD, Vantomme A, Hogg SM, Langouche G, Li J, Zhang GY
1507 - 1509	Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal annealing Li G, Chua SJ, Teng JH, Wang W, Feng ZC, Huang YH, Osipowicz T
1510 - 1515	New self-aligned processes for III-V electronic high speed devices Etrillard J, Besombes C, Bricard L, Duchenois AM
1516 - 1524	Effect of short-time helicon-wave excited N-2-Ar plasma treatment on the interface characteristic of GaAs Wada S, Kanazawa K, Okamoto N, Ikoma H
1525 - 1539	Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction Aksenov I, Iwai H, Nakada Y, Okumura H
1540 - 1544	Inductively coupled plasma damage in GaN Schottky diodes Cao XA, Zhang AP, Dang GT, Cho H, Ren F, Pearton SJ, Shul RJ, Zhang L, Hickman R, Van Hove JM
1545 - 1548	Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes Wang CW, Liao JY, Chen CL, Lin WK, Su YK, Yokoyama M
1549 - 1552	Plasma assisted two stage selenization process for the preparation of low resistivity ZnSe films Jeyakumar R, Chadda GK, Lakshmikumar ST, Rastogi AC
1553 - 1560	Arrays of ungated GaAs field emitters fabricated by wet or dry etching Ducroquet F, Kropfeld P, Yaradou O, Vanoverschelde A
1561 - 1566	Novel lateral field emission device fabricated on silicon-on-insulator material Yun MH, Turner A, Roedel RJ, Kozicki MN
1567 - 1569	Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition Wang J, Li WZ, Li HD
1570 - 1574	High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy Olbrich A, Ebersberger B, Boit C, Niedermann P, Hanni W, Vancea J, Hoffmann H
1575 - 1579	Sensitivity analysis of the field emitter Lei W, Wang BP, Yin HC, Li GH
1580 - 1584	High field characteristics of dielectric spacers in thin-film electrode vacuum gaps Ma XY, Sudarshan TS
1585 - 1588	Mechanism of highly preferred (002) texture of Ti films sputter deposited on water-absorbed borophosphosilicate glass films Yoshida T, Aoki K, Mitsushima Y
1589 - 1593	Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology Ayon AA, Ishihara K, Braff RA, Sawin HH, Schmidt MA
1594 - 1597	Low-energy electron-beam lithography using calixarene Tilke A, Vogel M, Simmel F, Kriele A, Blick RH, Lorenz H, Wharam DA, Kotthaus JP
1598 - 1601	New method to prepare W-B+-N ternary barrier to Cu diffusion by implanting BF2+ ions into W-N thin film Kim DJ, Kim YT, Park JW
1602 - 1604	Growth of a near-atomic protrusion on molybdenum field emitter tips under argon ion bombardment Okuyama F, Sugie H, Sato M
1605 - 1608	Multilayer resist films applicable to nanopatterning of insulating substrates based on current-injecting scanning probe lithography Sugimura H, Takai O, Nakagiri N
1611 - 1611	Papers from the 26th Conference on the Physics and Chemistry of Semiconductor Interfaces - Preface Rowe JE, Kavanagh KL
1612 - 1616	Deliberately designed interfaces for monolithic integration in optoelectronics Wang TR, Moll N, Cho KJ, Joannopoulos JD
1617 - 1621	Pyroelectronics: Novel device concepts based on nitride interfaces Zandler G, Majewski JA, Vogl P
1622 - 1626	Selective area chemical vapor deposition of titanium oxide films: Characterization of TI(OC3H7)(4) as an electron beam resist Mitchell WJ, Hu EL
1627 - 1631	Reduction and creation of paramagnetic centers on surfaces Of three different polytypes of SIC Macfarlane PJ, Zvanut ME
1632 - 1638	Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots Spithoven JL, Lorbacher J, Manke I, Heinrichsdorff F, Krost A, Bimberg D, Dahne-Prietsch M
1639 - 1648	Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition Flebbe O, Eisele H, Kalka T, Heinrichsdorff F, Krost A, Bimberg D, Dahne-Prietsch M
1649 - 1653	Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy Xin HP, Kavanagh KL, Zhu ZQ, Tu CW
1654 - 1658	Influence of active nitrogen species on high temperature limitations for (000(1)under-bar) GaN growth by rf plasma-assisted molecular beam epitaxy Myers TH, Millecchia MR, Ptak AJ, Ziemer KS, Stinespring CD
1659 - 1665	Nitridation of the GaAs(001) surface: Thermal behavior of the (3x3) reconstruction and its evolution Lu J, Haworth L, Hill P, Westwood DI, Macdonald JE
1666 - 1673	Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions Wilks SP, Williams RH, Pan M, Dunstan PR, Cowie BCC
1674 - 1681	AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields Rizzi A, Lantier R, Monti F, Luth H, Della Sala F, Di Carlo A, Lugli P
1682 - 1690	Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111) Vandre S, Kalka T, Preinesberger C, Dahne-Prietsch M
1691 - 1696	GaP(001) and InP(001): Reflectance anisotropy and surface geometry Esser N, Schmidt WG, Bernholc J, Frisch AM, Vogt P, Zorn M, Pristovsek M, Richter W, Bechstedt F, Hannappel T, Visbeck S
1697 - 1701	In situ reflectance difference spectroscopy of II-VI compounds: A real time study of N plasma doping during molecular beam epitaxy Stifter D, Schmid M, Hingerl K, Bonanni A, Garcia-Rocha M, Sitter H
1702 - 1707	Specular electron scattering in metallic thin films Egelhoff WF, Chen PJ, Powell CJ, Parks D, Serpa G, McMichael RD, Martien D, Berkowitz AE
1708 - 1715	Spin relaxation of conduction electrons Fabian J, Das Sarma S
1716 - 1721	Kinetics of MnAs growth on GaAs(001) and interface structure Schippan F, Trampert A, Daweritz L, Ploog KH
1722 - 1727	Reflectance difference spectroscopy and magneto-optical analysis of digital magnetic heterostructures Bonanni A, Prechtl G, Heiss W, Schinagl F, Holl S, Krenn H, Sitter H, Stifter D, Hingerl K
1728 - 1732	Coherent soft x-ray scattering from InP islands on a semiconductor substrate Adamcyk M, Nicoll C, Pinnington T, Tiedje T, Eisebitt S, Karl A, Scherer R, Eberhardt W
1733 - 1737	Infrared study of Si surfaces and buried interfaces Milekhin A, Friedrich M, Hiller K, Wiemer M, Gessner T, Zahn DRT
1738 - 1741	Infrared and Raman studies of confined and interface optical phonons in short-period GaAs/AlAs superlattices with a grating coupler Milekhin A, Rosch M, Batke E, Zahn DRT, Kohler K, Ganser P, Preobrazhenskii V, Semyagin B
1742 - 1749	Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures Yu ET, Dang XZ, Asbeck PM, Lau SS, Sullivan GJ
1750 - 1752	Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain Bridger PM, Bandic ZZ, Piquette EC, McGill TC
1753 - 1756	Piezoelectric fields in nitride devices Beach RA, McGill TC
1757 - 1760	Minigaps in strained silicon quantum wells on tilted substrates Thornton TJ, Ge F, Andresen A, Pivin D, Bird J, Ferry DK
1761 - 1766	DX centers in Al0.37Ga0.63As/GaAs and In0.34Al0.66As/In0.36Ga0.64As heterostructures Wieder HH, Sari H
1767 - 1772	Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures Gopal V, Chen EH, Kvam EP, Woodall JM
1773 - 1777	Nanoelectronic device applications of a chemically stable GaAs structure Janes DB, Kolagunta VR, Batistuta M, Walsh BL, Andres RP, Liu J, Dicke J, Lauterbach J, Pletcher T, Chen EH, Melloch MR, Peckham EL, Ueng HJ, Woodall JM, Lee T, Reifenberger R, Kubiak CP, Kasibhatla B
1778 - 1780	Role of As-4 in Ga diffusion on the GaAs(001)-(2x4) surface: A molecular beam epitaxy-scanning tunneling microscopy study Yang H, Labella VP, Bullock DW, Thibado PM
1781 - 1785	Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices Zuo SL, Yu ET, Allerman AA, Biefeld RM
1786 - 1790	Characterization of AlSb/InAs surfaces and resonant tunneling devices Nosho BZ, Weinberg WH, Barvosa-Carter W, Bracker AS, Magno R, Bennett BR, Culbertson JC, Shanabrook BV, Whitman LJ
1791 - 1794	Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth Wassermeier M, Hey R, Horicke M, Wiebicke E, Kostial H
1795 - 1802	Mechanistic studies of silicon oxidation Weldon MK, Queeney KT, Chabal YJ, Stefanov BB, Raghavachari K
1803 - 1805	Constraint theory and defect densities at (nanometer SiO2-based dielectric)/Si interfaces Phillips JC
1806 - 1812	Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics Lucovsky G, Wu Y, Niimi H, Misra V, Phillips JC
1813 - 1822	Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces Wu Y, Niimi H, Yang H, Lucovsky G, Fair RB
1823 - 1830	Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopy Ludeke R, Schenk A
1831 - 1835	Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Madey TE, Lucovsky G
1836 - 1839	Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition Misra V, Lazar H, Wang Z, Wu Y, Niimi H, Lucovsky G, Wortman JJ, Hauser JR
1840 - 1847	Remote plasma enhanced chemical vapor deposition SiO2 in silicon based nanostructures Rack MJ, Hilt LL, Vasileska D, Ferry DK
1848 - 1851	Self-organization in Si/CoSi2(111) heteroepitaxy Meyer T, Klemenc M, Graf T, von Kanel H
1852 - 1855	Comparison of nanomachined III-V semiconductor substrates Grazulis L, Kelly DL, Walker DE, Tomich DH, Eyink KG, Lampert WV
1856 - 1866	Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process Hasegawa H, Sato T, Kaneshiro C
1867 - 1876	Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities Monch W
1877 - 1883	In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces Chen LC, Palmstrom CJ
1884 - 1890	Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces Yang Y, Mishra S, Cerrina F, Xu SH, Cruguel H, Lapeyre GJ, Schetzina JF