Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.19, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (56 articles)

1687 - 1690	Contact-pressing metallization Khang DY, Lee HH
1691 - 1693	Flat-panel structure for field-emission displays with carbon nanotube cathode Zhu CC, Liu WH, Huangfu LJ
1694 - 1698	Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls Grover R, Hryniewicz JV, King OS, Van V
1699 - 1705	Complex roughening of Si under oblique bombardment by low-energy oxygen ions Alkemade PFA, Jiang ZX
1706 - 1714	Characterization of high-K dielectric ZrO2 films annealed by rapid thermal processing Hu YZ, Tay SP
1715 - 1720	Impact of nanometer-scale roughness on contact-angle hysteresis and globulin adsorption Muller B, Riedel M, Michel R, De Paul SM, Hofer R, Heger D, Grutzmacher D
1721 - 1727	Photoenhanced wet etching of gallium nitride in KOH-based solutions Skriniarova J, Bochem P, Fox A, Kordos P
1728 - 1733	Electron beam writing methods of x-ray masks for eliminating thermal image placement errors Kise K, Aya S, Yabe H, Ami S, Marumoto K, Satoh S, Watanabe H
1734 - 1738	Surface analysis of (NH4)(2)S-x-treated InGaN using x-ray photoelectron spectroscopy Lin YJ, Lee CT
1739 - 1742	Enhancement on field-emission characteristics of diamondlike coated Mo substrates by redox process Lin CM, Chiang SJ, Yokoyama M, Chuang FY, Wong WC, Lin IN
1743 - 1746	Selective plasma nitridation and contrast reversed etching of silicon Sharma S, Sunkara MK, Crain MM, Lyuksyutov SF, Harfenist SA, Walsh KM, Cohn RW
1747 - 1751	Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP Georgiev N, Mozume T
1752 - 1755	Clocking of molecular quantum-dot cellular automata Hennessy K, Lent CS
1756 - 1761	Atomic structure and optical anisotropy of III-V(001) surfaces Esser N, Schmidt WG, Cobet C, Fleischer K, Shkrebtii AI, Fimland BO, Richter W
1762 - 1768	Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films Brillson LJ
1769 - 1774	Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon Francois-St-Cyr H, Anoshkina E, Stevie F, Chow L, Richardson K, Zhou D
1775 - 1781	Low damage and low surface roughness GaInP etching in Cl-2/Ar electron cyclotron resonance process Yoon SF, Ng TK, Zheng HQ
1782 - 1787	Rapid thermal chemical vapor deposition of zirconium oxide for metal-oxide-semiconductor field effect transistor application Chang JP, Lin YS, Chu K
1788 - 1795	Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films Park B, Conti R, Economikos L, Chakravarti A, Ellenberger J
1796 - 1802	Pattern transfer from a biomolecular nanomask to a substrate via an intermediate transfer layer Winningham TA, Whipple SG, Douglas K
1803 - 1807	Theoretical study of GaN molecular beam epitaxy growth using electron cyclotron resonance nitrogen plasma Fu WB, Venkat R, Meyyappan M
1808 - 1812	Calibrated scanning capacitance microscopy investigations on p-doped Si multilayers Basnar B, Golka S, Gornik E, Harasek S, Bertagnolli E, Schatzmayr M, Smoliner J
1813 - 1819	Periodic submicrometer structures by sputtering Dick B, Brett MJ, Smy T, Belov M, Freeman MR
1820 - 1823	Focusing field emission arrays constructed by self-aligned photolithography Li DJ, Zhang JC
1824 - 1827	Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy Nitta T, Ohno Y, Shimomura S, Hiyamizu S
1828 - 1832	Microstructural pressure sensor based on an enhanced resonant mode hysteresis effect Brown KB, Ma Y, Allegretto W, Lawson RPW, Vermeulen FE, Robinson AM
1833 - 1840	Metalorganic chemical vapor deposition Pb(Zr,Ti)O-3 and selected lower electrode structures as a pathway to integrated piezoelectric microelectromechanical systems Chen IS, Roeder JF, Kim DJ, Maria JP, Kingon AI
1841 - 1844	Effect of time-varying axial magnetic field on photoresist ashing in an inductively coupled plasma Park SG, Song HY, O BH
1845 - 1851	Process characterization for tapered contact etch Celii FG, He Q, Liu HY, DeBord JR, Sakima H
1852 - 1856	SCALPEL mark detection using Si/SiO2 and 100 keV backscattered electrons Farrow RC, Mkrtchyan M, Kizilyalli IC, Waskiewicz WK, Hopkins LC, Alakan A, Gibson G, Brown P, Misra S, Trimble L
1857 - 1865	Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology Pinnow CU, Kasko I, Dehm C, Jobst B, Seibt M, Geyer U
1866 - 1869	Comparative investigation of interface effect on transmission function of electrons and holes in InAs/AlSb-based heterostructures Ichizli VM, Droba M, Mutamba K, Sigurdardottir A, Hartnagel HL
1870 - 1873	Notch formation by stress enhanced spontaneous etching of polysilicon Chang JP, Sawin HH
1874 - 1878	Development of an advanced low-energy electron diffraction technique using field-emitted electrons from scanning tunneling microscope tips Mizuno S
1879 - 1893	Integrated multiscale three-dimensional simulation approach in local interconnect gap-fill optimization Sukharev V, Kumar K, Li WD, Zhao J, Pyka W, McInerney EJ, Joh S
1894 - 1897	Breakdown characteristics of ultrathin gate oxides (< 4 nm) in metal-oxide-semiconductor structure subjected to substrate injection Huang CH, Hwu JG
1898 - 1900	In situ electron spin resonance observation of Si(111) 7 x 7 surface during hydrogenation process Futako W, Nishizawa M, Yasuda T, Isoya J, Yamasaki S
1901 - 1904	Fabrication of nanohole array on Si using self-organized porous alumina mask Shingubara S, Okino O, Murakami Y, Sakaue H, Takahagi T
1905 - 1910	Characterization of damage in InP dry etched using nitrogen containing chemistries Carlstrom CF, Anand S
1911 - 1914	Emission-uniformity improvement and work-function reduction of Si emitter tips by ethylene gas exposure Matsukawa T, Kanemaru S, Nagao M, Yokoyama H, Itoh J
1915 - 1924	Monitoring lithographic focus and tilting performance by off-line overlay measurement tools Ku CY, Lei TF, Cheng DS
1925 - 1930	Self-aligned process for single electron transistors Berg EW, Pang SW
1931 - 1941	Run to run control in tungsten chemical vapor deposition using H-2/WF6 at low pressures Sreenivasan R, Gougousi T, Xu YH, Kidder J, Zafiriou E, Rubloff GW
1942 - 1947	Effect of ammonia plasma pretreatment on silicon-nitride barriers for Cu metallization systems Qin W, Mo ZQ, Tang LJ, Yu B, Wang SR, Xie J
1948 - 1952	Growth and optical properties of GaAsSb quantum wells for 1.3 mu m VCSELs Cunningham JE, Dinu M, Shah J, Quochi F, Kilper D, Jan WY, Williams MD, Mills A, Henderson WE
1953 - 1957	Enhancement of electron field emission from amorphous carbon films by plasma treatments Lee KY, Ryu JT, Fujimoto K, Honda S, Katayama M, Hirao T, Oura K
1958 - 1961	Growth and characterization of rare-earth monosulfides for cold cathode applications Modukuru Y, Thachery J, Tang H, Malhotra A, Cahay M, Boolchand P
1962 - 1966	Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiOx capping: Effect of nitrous oxide flow rate Deenapanray PNK, Jagadish C
1967 - 1971	Current and future ferroelectric nonvolatile memory technology Fox GR, Chu F, Davenport T
1972 - 1975	Atomic models of (root 3X root 3)R30 degrees reconstruction on hexagonal 6H-SiC(0001) surface Han Y, Aoyama T, Ichimiya A, Hisada Y, Mukainakano S
1976 - 1980	Formation of Hf ohmic contacts by surface treatment of n-GaN in KOH solutions Chung MS, Lin WT, Gong JR
1981 - 1984	Low temperature polysilicon chemical vapor deposition system for thin film transistor liquid crystal diode Hosokawa A, Shang Q, Kardokus J, Blonigan W
1985 - 1988	Incorporating a corner correction scheme into enhanced pattern area density proximity effect correction Ea CS, Brown AD
1989 - 1994	High-temperature real-time observation of surface defects induced by single ion irradiation using scanning-tunneling-microscope/ion-gun combined system Shimada K, Ishimaru T, Yamawaki T, Uchigasaki M, Tomiki K, Matsukawa T, Ohdomari I
1995 - 1997	Silicon-on-insulator processes for the fabrication of novel nanostructures Bourland S, Denton J, Ikram A, Neudeck GW, Bashir R
1998 - 2000	New in situ measurement method for nanoparticles formed in a radio frequency plasma-enhanced chemical vapor deposition reactor Seol KS, Tsutatani Y, Fujimoto T, Okada Y, Takeuchi K, Nagamoto H