L17 - L19 |
Interface-blocking mechanism for reduction of threading dislocations in SiGe and Ge epitaxial layers on Si(100) substrates Yang TH, Luo GL, Chang EY, Hsieh YC, Chang CY |
L20 - L23 |
Linear alignment of SiC dots on silicon substrates Cimalla V, Schmidt AA, Stauden T, Zekentes K, Ambacher O, Pezoldt J |
L24 - L27 |
Compound-target sputtering for niobium carbide thin-film deposition Liao MY, Gotoh Y, Tsuji H, Ishikawa J |
L28 - L31 |
Hard and conductive carbon nanodome thin films deposited by rf magnetron spluttering Chowdhury S, Laugier MT |
L32 - L34 |
Selectively deposited Ru top electrode on Pb(Zr0.3Ti0.7)O-3 and Ru step coverage on TiN by digital chemical vapor deposition Dey SK, Goswami J, Bhaskar S, Cao W, Noh WC |
2283 - 2285 |
Controllable fabrication of fiber nano-tips by dynamic chemical etching based on siphon principle Gu N, Li CA, Sun L, Liu ZH, Sun YK, Xu LN |
2286 - 2290 |
Bias-temperature stress analysis of Cu/ultrathin Ta/SiO2/Si interconnect structure Lim BK, Park HS, Chin LK, Woo SW, See AKH, Seet CS, Lee TJ, Yakovlev NL |
2291 - 2294 |
Changes in electrical and optical properties of p-AlGaN due to proton implantation Polyakov AY, Smirnov NB, Govorkov AV, Baik KH, Pearton SJ |
2295 - 2298 |
Equivalent oxide thickness reduction of interpoly dielectric using ALD-Al2O3 for flash device application Lee TP, Jang C, Haselden B, Dong M, Park S, Bartholomew L, Chatham H, Senzaki Y |
2299 - 2302 |
Direct COSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation Chang JJ, Liu CP, Chen SW, Chang CC, Hsieh TE, Wang YL |
2303 - 2308 |
Strain relaxation and surface roughness of InxAl1-xAs graded buffer layers grown on InP for 6.05 angstrom applications Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS |
2309 - 2313 |
System optimization of membrane mask distortion correction based on Fourier analysis Murooka K, Lim MH, Smith HI |
2314 - 2318 |
High performances of InGaP/InGaAs/GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure Tsai JH, Zhu KP, Chiu SY, Chu YC |
2319 - 2325 |
Thermally grown ruthenium oxide thin films Jelenkovic EV, Tong KY |
2326 - 2332 |
Growth characteristics of oxide during prolonged anodization of aluminum preparing ordered nanopore arrays Wu MT, Leu IC, Hon MH |
2333 - 2336 |
Formation of p(+) shallow junctions using SiGe barriers Thompson PE, Crosby R, Bennett J, Felch S |
2337 - 2344 |
Atomic force microscope based analysis of bound and bound plus mobile phase monolayer behavior under mechanical and electrical stress Nainaparampil JJ, Eapen KC, Zabinski JS |
2345 - 2352 |
Effectiveness of reactive sputter-deposited Ta-N films as diffusion barriers for Ag metallization Adams D, Malgas GF, Theodore ND, Gregory R, Kim HC, Misra E, Alford TL, Mayer JW |
2353 - 2358 |
Investigation of nodule growth in ion beam sputtered Mo/Si multilayers Quesnel E, Hue J, Muffato V, Pelle C, Lamy P |
2359 - 2363 |
Capture of flaked particles during plasma etching by a negatively biased electrode Moriya T, Ito N, Uesugi F |
2364 - 2368 |
Effects of annealing treatment on microstructure and photocatalytic performance of nanostructured TiO2 coatings through flame spraying with liquid feedstocks Yang GJ, Li CJ, Han F, Huang XC |
2369 - 2374 |
Studies of the driving force for room-temperature microstructure evolution in electroplated copper films Lee H, Nix WD, Wong SS |
2375 - 2379 |
Diffusion barrier properties of metalorganic chemical vapor deposition -WNx compared with other barrier materials Lee BH, Yong K |
2380 - 2383 |
B diffusion in Si with pre-amorphization of different species Li HJ, Zeitzoff P, Larson L, Banerjee S |
2384 - 2390 |
Enhancement of adhesion strength of Cu seed Bayer with different thickness in Cu/low-k multilevel interconnects Wang G, Jong YW, Balakumar S, Seah CH, Hara T |
2391 - 2397 |
Experimental aspects and modeling for quantitative measurements in scanning capacitance microscopy Giannazzo F, Goghero D, Raineri V |
2398 - 2401 |
Growth and characterization of sn-doped GaAsSb and GaAs epilayers on GaAs (001) Uchitomi N, Takei T, Endoh M, Jinbo Y |
2402 - 2408 |
Structural and chemical characterization of functional SiOxCy : H coatings for polymeric lenses Fernandez-Hidalgo P, Martin-Palma RJ, Conde A, Gago R, Simancas J, Garcia-Diego I, Egio A, Martinez-Duart JM |
2409 - 2416 |
Comparative study of Ti/AL/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures Selvanathan D, Mohammed FM, Tesfayesus A, Adesida I |
2417 - 2422 |
Fabrication of wide-IF 200-300 GHz superconductor-insulator-superconductor mixers with suspended metal beam leads formed on silicon-on-insulator Kaul AB, Bumble B, Lee KA, LeDuc HG, Rice F, Zmuidzinas J |
2423 - 2428 |
Effects of Cu at the device function on the properties of CdTe/CdS photovoltaic cells Berniard TJ, Albin DS, To B, Pankow JW, Young M, Asher SE |
2429 - 2433 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel Li YJ, Hsu WC, Chen IL, Lee CS, Chen YJ, Lo K |
2434 - 2438 |
Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures Solodky S, Baksht T, Khramtsov A, Leibovitch M, Hava S, Shapira Y |
2439 - 2447 |
Integration of benzocyclobutene polymers and silicon micromachined structures using anisotropic wet etching Ghalichechian N, Modafe A, Ghodssi R, Lazzeri P, Micheli V, Anderle M |
2448 - 2453 |
Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GalnAsN Carrere H, Arnoult A, Bedel-Pereira E, Ricard A |
2454 - 2461 |
Characteristics of polarity-controlled ZnO films fabricated using the homoepitaxy technique Matsui H, Saeki H, Kawai T, Sasaki A, Yoshimoto M, Tsubaki M, Tabata H |
2462 - 2466 |
Nitrogen interface engineering in Al2O3 capacitors for improved thermal stability Kirsch PD, Park DG, Chan KK, D'Emic C, Bruley J, Jammy R |
2467 - 2472 |
Modeling SiC surface roughness using neural network and atomic force microscopy Kim B, Kim S, Lee BT |
2473 - 2478 |
Towards all-dry lithography: Electron-beam patternable poly(glycidyl methacrylate) thin films from hot filament chemical vapor deposition Mao Y, Felix NM, Nguyen PT, Ober CK, Gleason KK |
2479 - 2485 |
AlGaN/GaN metal-oxlde-semiconductor heterostructure field-effect transistors using barium strontium titanate Hansen PJ, Shen L, Wu Y, Stonas A, Terao Y, Heikman S, Buttari D, Taylor TR, DenBaars SP, Mishra UK, York RA, Speck JS |
2486 - 2492 |
Imprinting of polymer at low temperature and pressure Tan L, Kong YP, Pang SW, Yee AF |
2493 - 2498 |
Inverted sidewall spacer and inner offset oxide process for excellent 2-bit silicon-oxide-nitride-oxide-silicon memory under 100 nm gate length Lee YK, Lee JD, Park BG, Kang ST, Chung C, Park D |
2499 - 2503 |
Carbon-doped InP/In0.53Ga0.47As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy Zhang R, Yoon SF, Tan KH, Lew KL, Sun ZZ |
2504 - 2510 |
Periodic structure formation by focused electron-beam-induced deposition Bret T, Utke I, Gaillard C, Hoffmann P |
2511 - 2517 |
Investigation into the effects of aluminum cathode modification and ion-beam-induced damage in organic light-emitting devices Jeong SM, Koo WH, Choi SH, Jo SJ, Baik HK, Lee SJ, Song KM |
2518 - 2521 |
Fabrication and characterization of 650 nm resonant-cavity light-emitting diodes Tsai CL, Ho CW, Huang CY, Lee FM, Wu MC, Wang HL, Ko SC, Ho WJ, Huang J, Deng JR |
2522 - 2525 |
Oxidation-induced improvement in the sidewall morphology and cross-sectional profile of silicon wire waveguides Takahashi J, Tsuchizawa T, Watanabe T, Itabashi S |
2526 - 2532 |
Surface segregation of photoresist copolymers containing polyhedral oligomeric silsesquioxanes studied by x-ray photoelectron spectroscopy Eon D, Cartry G, Fernandez V, Cardinaud C, Tegou E, Bellas V, Argitis P, Gogolides E |
2533 - 2537 |
Development of thin film getters suitable for field-emission display in high vacuum systems Kim KC, Ahn HJ, Yoon YJ, Baik HK, Lee SM, Lee SJ |
2538 - 2541 |
Study of the evolution of nanoscale roughness from the edge of exposed resist to the sidewall of deep-etched lnP/InGaAsP heterostructures Jang JH, Zhao W, Bae JW, Adesida I, Lepore A, Kwakernaak M, Abeles JH |
2542 - 2547 |
Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2 Takeyama MB, Itoi T, Satoh K, Sakagami M, Noya A |
2548 - 2551 |
Soft lithographic fabrication of an image sensor array on a curved substrate Jin HC, Abelson JR, Erhardt MK, Nuzzo RG |
2552 - 2554 |
Design of a heating-cooling stage for scanning tunneling microscopy and temperature programmed desorption experiments Illingworh A, Zhou J, Ozturk O, Chen DA |