1 - 8 |
Detection by emission spectroscopy of active species in plasma-surface processes Ricard A, Czerwiec T, Belmonte T, Bockel S, Michel H |
9 - 12 |
Properties of the plasma produced by multi-cathode electron beam plasma sources Kang YB, Jeon H, Kim TY, Chung KH, Ko DK, Jung JK, Noh SJ |
13 - 17 |
Sol-gel derived (La,Sr)CoO3 thin films on silica glass Kim BJ, Lee J, Yoo JB |
18 - 21 |
A two-dimensional simulation of electron cyclotron resonance plasma and comparison with experimental data Shin CB, Hur JS, Oh SG |
22 - 26 |
Development of a large-area transformer coupled plasma source Kim HJ, Han KH, Yoon NS, Hwang YS |
27 - 30 |
Measurements of the loss probability of nitrogen atoms versus temperature on various surfaces Belmonte T, Lefevre L, Czerwiec T, Michel H, Ricard A |
31 - 36 |
Effects of substrate bias voltage on properties of CoCrTa/Cr media Kim SH, Shin KH, Lee TD |
37 - 41 |
In situ ellipsometry studies of temperature-dependent Au thin-film growth Lee S, Hong J, Oh SG |
42 - 46 |
beta-SiC thin film growth using microwave plasma activated CH4-SiH4 sources Kim HS, Park YJ, Choi IH, Baik YJ |
47 - 51 |
Properties of silicon oxide films deposited by plasma-enhanced CVD using organosilicon reactants and mass analysis in plasma Inoue Y, Takai O |
52 - 54 |
RuO2 thin film fabrication with plasma-enhanced chemical vapor deposition Park SE, Kim HM, Kim KB, Min SH |
55 - 58 |
Correlation between silicon particles and modulated crossed magnetic field in silane plasmas Tazoe K, Yang SC, Maemura Y, Ohtsu M, Fujiyama H |
59 - 62 |
Control of silicon particle behavior using a low frequency electromagnetic field in silane plasma chemical vapor deposition Yang SC, Fujiyama H |
63 - 67 |
Growth of magnesium oxide thin films using single molecular precursors by metal-organic chemical vapor deposition Boo JH, Lee SB, Yu KS, Koh W, Kim Y |
68 - 72 |
Structure and optical properties of Si incorporated diamond-like carbon films deposited by rf plasma-assisted chemical vapor deposition Lee S, Kim DS, Rhee SG, Oh SE, Lee KR |
73 - 78 |
Characterization of alpha-Fe2O3 thin films processed by plasma enhanced chemical vapor deposition (PECVD) Lee ET, Kim BJ, Jang GE |
79 - 83 |
Phase transformation phenomena from alpha type to gamma type one of Fe2O3 thin film deposited by PECVD Kim BJ, Lee ET, Jang GE |
84 - 90 |
SiO2 etching using high density plasma sources Tsukada T, Nogami H, Nakagawa Y, Wani E, Mashimo K, Sato H, Samukawa S |
91 - 93 |
Lateral force microscopy study of functionalized self-assembled monolayer surfaces Kim Y, Kim KS, Park M, Jeong J |
94 - 100 |
Electrical properties of reactively sputtered CNx films Monclus MA, Cameron DC, Chowdhurry AKMS |
IX - IX |
Proceedings of the 1st Asian-European International Conference on Plasma Surface Engineering, Seoul, Korea, October 5-9, 1997 - Preface Chung KH, Han JG |
101 - 104 |
ECWR-plasma CVD as a novel technique for phase controlled deposition of semiconductor films Oechsner H, Scheib M, Goebel H |
105 - 108 |
Analysis of electrically non-conducting sample structures with electron and mass spectroscopic methods Oechsner H |
109 - 111 |
Low dielectric constant CF/SiOF composite film deposition in a helicon plasma reactor Yun SM, Chang HY, Kang MS, Choi CK |
112 - 119 |
Advanced plasma technology in microelectronics Jung CO, Chi KK, Hwang BG, Moon JT, Lee MY, Lee JG |
120 - 125 |
Nanotechnology towards the 21st Century Tanaka K |
126 - 131 |
Thermal stability of TiN/AlN superlattices Setoyama M, Irie M, Ohara H, Tsujioka M, Takeda Y, Nomura T, Kitagawa N |
132 - 135 |
Preparation of YBCO/ZrO2 thin films on Si by MOCVD using a mode converting type of microwave plasma apparatus Komatsu Y, Sato T, Ito S, Akashi K |
136 - 139 |
The analysis of thermal stress effect on electromigration failure time in Al alloy thin-film interconnects Lee SH, Kwon D |
140 - 147 |
TFT-LCD technology Katayama M |
148 - 151 |
Poly-Si thin film transistors with a source overlap and a drain offset: leakage current characteristics Jang HK, Lee CE, Noh SJ |
152 - 155 |
ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode Choi KH, Kim JY, Lee YS, Kim HJ |
156 - 159 |
Alkali metal promoted oxidation of the Si(113) surface Hwang C, An KS, Park RJ, Kim JS, Lee JB, Park CY, Kimura A, Kakizakia A |
160 - 164 |
Effects of the different heat treatments on the growth and formation of iron silicide on Si(100) Oh JH, Lee SK, Han KP, An KS, Park CY |
165 - 167 |
Dependence of the properties of Co/Ti multilayered films on the ferromagnetic sublayer thickness Lee GM, Kim KW, Kudryavtsev YV, Smardz L, Lee YP |
168 - 171 |
Etch-induced damage in single crystal Si trench etching by planar inductively coupled Cl-2/N-2 and Cl-2/HBr plasmas Lee YJ, Hwang SW, Yeom GY, Lee JW, Lee JY |
172 - 175 |
Effects of CdS substrates on the physical properties of polycrystalline CdTe Films Lee YH, Lee WJ, Kwon YS, Yeom GY, Yoon JK |
176 - 179 |
A study on the characteristics of inductively coupled plasma using multidipole magnets and its application to oxide etching An KJ, Kim HS, Yoo JB, Yeom GY |
180 - 183 |
A study of GaN etch mechanisms using inductively coupled Cl-2/Ar plasmas Kim HS, Yeom GY, Lee JW, Kim TI |
184 - 187 |
Investigation of surface polymerization on silicon exposed to C4F8 helicon wave plasmas Lee WJ, Kim HS, Yeom GY, Baek JT |
188 - 191 |
Inductively coupled plasma etching of SiO2 layers for planar lightwave circuits Jung ST, Song HS, Kim DS, Kim HS |
192 - 195 |
Evaluation of fluorinated polyimide etching processes for optical waveguide fabrication Kim JH, Kim EJ, Choi HC, Kim CW, Cho JH, Lee YW, You BG, Yi SY, Lee HJ, Han K, Jang WH, Rhee TH, Lee JW, Pearton SJ |
196 - 201 |
Advanced PECVD processes for highly electron emitting diamond-like-carbon Jang J, Moon JH, Han EJ, Chung SJ |
202 - 206 |
Large area deposition of thick diamond film by direct-current PACVD Baik YJ, Lee JK, Lee WS, Eun KY |
207 - 210 |
Determination of elastic modulus and Poisson's ratio of diamond-like carbon films Cho SJ, Lee KR, Eun KY, Hahn JH, Ko DH |
211 - 215 |
The nucleation of highly oriented diamond on silicon using a negative bias Kim YK, Lee KH, Lee MJ, Lee JY |
216 - 220 |
Fabrication of gated diamond field emitter array using a selective diamond growth process Ha SC, Kang DH, Kim KB, Min SH, Kim IH, Lee JD |
221 - 224 |
Two-dimensional spatial profiles of plasma parameters in DC reactive magnetron sputtering of indium-tin-oxide Muta M, Ohgushi S, Matsuda Y, Fujiyama H |
225 - 229 |
Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering Shin SH, Shin JH, Park KJ, Ishida T, Tabata O, Kim HH |
230 - 233 |
Ion beam sputtering of SnO2 with low energy oxygen ion beams Choe YS, Chung JH, Kim DS, Baik HK |
234 - 237 |
Effect of cohesive energy on atomic transport in ion beam mixed Co/Pt bilayer film Chang GS, Son JH, Kim TG, Chae KH, Whang CN, Jeong JI, Lee YP |
238 - 245 |
Reduction of intrinsic stress in cubic boron nitride films Ullmann J, Kellock AJ, Baglin JEE |