1 - 4 |
Laser-induced fluorescence diagnosis of plasma processing sources McWilliams R, Edrich D |
5 - 12 |
Numerical simulation of a potassium-seeded turbulent RF inductively coupled plasma with particles Shigeta M, Sato T, Nishiyama H |
X - X |
Tadahiro Sakuta - Obituary Horiike Y |
13 - 18 |
Behavior of hydride species on Si surface during methane plasma irradiation investigated by in-situ infrared spectroscopy Shinohara M, Kuwano T, Kimura Y, Niwano M |
19 - 26 |
Dynamic responses of Ar-CO2 and Ar-N-2 induction thermal plasmas in pulse amplitude modulation approach Hossain MM, Tanaka Y, Sakuta T |
27 - 32 |
Formation mechanism of electrically conductive nanoparticles by induction thermal plasmas Watanabe T, Nezu A, Abe Y, Ishii Y, Adachi K |
33 - 38 |
Rapid synthesis of ferrite particles from powder mixtures using thermal plasma processing Fukumasa O, Fujiwara T |
39 - 43 |
High-rate deposition of highly crystallized silicon films from inductively coupled plasma Kosku N, Kurisu F, Takegoshi M, Takahashi H, Miyazaki S |
44 - 48 |
Steam plasma reforming using microwave discharge Sekiguchi H, Mori Y |
49 - 55 |
Synthesis of p-type ZnO thin films using co-doping techniques based on KrF excimer laser deposition Ohshima T, Ikegami T, Ebihara K, Asmussen J, Thareja R |
56 - 61 |
Application feasibility of high-performance-type plasma jet device to various material processes Osaki K, Fujimoto S, Fukumasa O |
62 - 68 |
Plasma applications for biochip technology Ichiki T, Sugiyama Y, Taura R, Koidesawa T, Horiike Y |
69 - 71 |
Secondary electron ejection from the MgO protection layer in AC plasma display panels for low-energy noble ions Lee SK, Kim JH, Lee J, Whang KW |
72 - 77 |
Theoretical investigation of the evolution of electron energy distribution functions in inductively coupled discharges Kim SS, Chung CW, Chang HY |
78 - 82 |
Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties Jeong SH, Lee JW, Lee SB, Boo JH |
83 - 88 |
Volume and heterogeneous chemistry of active species in chlorine plasma Efremov AM, Kim DP, Kim CI |
89 - 94 |
Diamond thick film deposition in wafer scale using single-cathode direct current plasma assisted chemical vapour deposition Lee WS, Baik YJ, Chae KW |
95 - 101 |
Hydration of r.f. magnetron sputtered MgO thin films for a protective layer in AC plasma display panel Lee JH, Eun JH, Park SY, Kim SG, Kim HJ |
IX - IX |
Proceedings from the Joint International Plasma Symposium of the 6th Asia-Pacific Conference on Plasma Science & Technology (6th APCPST), the 15th Symposium on Plasma Science for Materials (15th SPSM), & the 11th Korea Accelerator & Plasma Research Association Annual Conference (11th KAPRA), Jeju Island, Korea, 1-4 July, 2002 - Preface Horike Y |
102 - 107 |
Improvement of the biocompatibility and mechanical properties of surgical tools with TiN coating by PACVD Park J, Kim DJ, Kim YK, Lee KH, Lee KH, Lee H, Ahn S |
108 - 115 |
The characterization of structure-tailored plasma films deposited from the pulsed RF discharge Zhang J, Feng XF, Xie HK, Shi YC, Pu TS, Guo Y |
116 - 119 |
Template-directed synthesis of carbon nanowires using pulsed corona plasma at atmospheric pressure Li MW, Hu Z, Wang XZ, Wu Q, Chen Y |
120 - 123 |
Square pattern formation in a gas discharge system Dong LF, Yin ZQ, Wang L, Fu GS, He YF, Chai ZF, Li ZC |
124 - 130 |
Effects of scanning path on the deposition process in rapid plasma spray tooling: Modeling by homogenization theory Wang GL, Chen YX, Zhang HO |
131 - 134 |
Characteristics of AlN buffer layers for GaAs epitaxial growths on MnZn ferrite substrates Hirato K, Fujioka H, Ito S, Ohta J, Oshima M |
135 - 138 |
Plasma oxidation and magnetoresistance in tunnel junction device Jeon DM, Park JW, Kim YS, Yoon DH, Suh SJ |
139 - 144 |
Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching Lee JH, Yoon HS, Shim JY, Kim HC |
145 - 149 |
Deposition of Ti thin film using the magnetron sputtering method Jung MJ, Nam KH, Shaginyan LR, Han JG |
150 - 153 |
Nano- and micro-tribological characteristics of amorphous carbon films prepared by shielded arc ion plating Lee KH, Sugimura H, Inoue Y, Takai O |
154 - 160 |
MgO deposition using reactive ionized sputtering Matsuda Y, Koyama Y, Tashiro K, Fujiyama H |
161 - 164 |
Preparation of hard and ultra water-repellent silicon oxide films by microwave plasma-enhanced CVD at low substrate temperatures Wu YY, Sugimura H, Inoue Y, Takai O |
165 - 169 |
The influence of carbon content in carbon-doped silicon oxide film by thermal treatment Yang CS, Yu YH, Lee KM, Lee HJ, Choi CK |
170 - 173 |
The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer Lee DH, Jeon DM, Yoon SY, Lee JP, Kim BG, Suh SJ |
174 - 178 |
Optical properties of pure and Al doped ZnO thin films fabricated with plasma produced by excimer laser Shan FK, Yu YS |
179 - 185 |
Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator Lee JB, Kim HJ, Kim SG, Hwang CS, Hong SH, Shin YH, Lee NH |
186 - 192 |
Fabrication of CuIn1-xGaxSe2 thin film solar cells by sputtering and selenization process Song HK, Jeong JK, Kim HJ, Kim SK, Yoon KH |
193 - 198 |
Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering Lee SH, Yoon KH, Cheong DS, Lee JK |
199 - 204 |
The protection of MgO film against hydration by using Al2O3 capping layer deposited by magnetron sputtering method Eun JH, Lee JH, Kim SG, Um MY, Park SY, Kim HJ |
205 - 210 |
Improvement of electrochemical properties of MCMB powders through reactive ICP modification Tanka H, Osawa T, Moriyoshi Y, Kurihara M, Maruyama S, Ishigaki T, Kanda H |
211 - 214 |
Structure of metal doped TiO2 particles produced by RF plasma Takeda A, Sato T, Kaito C, Kaneko S |
215 - 217 |
Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition Ito S, Fujioka H, Ohta J, Takahashi H, Oshima M |
218 - 221 |
Growth temperature dependence of structural properties for AlN films grown on (Mn,Zn)Fe2O4 substrates Ohta J, Fujioka H, Ito S, Oshima M |
222 - 226 |
Plasma-induced damage in PZT thin films etched by inductively coupled plasma Kang MG, Kim KT, Kim CI |
227 - 231 |
Comparison of the removal efficiency for organic contaminants on silicon wafers stored in plastic boxes between UV/O-3 and ECR oxygen plasma cleaning methods Choi K, Eom TJ, Lee C |
232 - 237 |
On mechanisms of argon addition influence on etching rate in chlorine plasma Efremov AM, Kim DP, Kim CI |
238 - 241 |
Post-etch residue removal in BCB/Cu interconnection structure Hong YT, Kim YI, Lee MC, Park S, Shim D, Park CM, Hong BY, Roh Y, Jung SH, Song IS |
242 - 246 |
High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field Kim DW, Jeong CH, Kim KN, Lee HY, Kim HS, Sung YJ, Yeom GY |
247 - 251 |
Effect of time-varying axial magnetic field on high aspect ratio contact hole etching Song HY, Choi YH, O BH, Park SG, Oh JS, Kim JW |
252 - 258 |
Effect of additives on photocatalytic activity of titanium dioxide powders synthesized by thermal plasma Oh SM, Kim SS, Lee JE, Ishigaki T, Park DW |
259 - 263 |
Electron-temperature dependence of nitrogen dissociation in 915 MHz ECR plasma Itagaki N, Iwata S, Muta K, Yonesu A, Kawakami S, Ishii N, Kawai Y |
264 - 269 |
Increase of cleaning rate and reduction in global warming effect during C4F8O/O-2 remote plasma cleaning of silicon nitride by adding NO and N2O Oh CH, Lee NE, Kim JH, Yeom GY, Yoon SS, Kwon TK |
270 - 274 |
Development of a large-area, multi-helicon rectangular plasma source for TFT-LCD processing Kim YJ, Han SH, Hwang W, Hwang YS |
275 - 279 |
Linear internal inductively coupled plasma (ICP) source with magnetic fields for large area processing Lee YJ, Kim KN, Song BK, Yeom GY |
280 - 284 |
Pair-ion plasma generation and fullerene-dimer formation Oohara W, Hatakeyama R |
285 - 287 |
Development of high frequency micro plasma source in a magnetic field Matsushita M, Matsuda Y, Fujiyama H |
288 - 292 |
Study on self-bias voltage induced on the substrate by r.f. bias power in a high density plasma Kim JH, Shin YH, Chung KH |
293 - 297 |
A hybrid solution of non-uniform planar-type inductively coupled plasma-heating problem Yoon NS, Park BH, Kim JH, Shin YH |
298 - 306 |
3D modeling of plasma-particle interactions in a plasma jet under dense loading conditions Ramachandran K, Kikukawa N, Nishiyama H |
307 - 311 |
Encapsulation of cesium inside single-walled carbon nanotubes by plasma-ion irradiation method Jeong GH, Farajian AA, Hirata T, Hatakeyama R, Tohji K, Briere TM, Mizuseki H, Kawazoe Y |
312 - 317 |
Growth characteristics of carbon nanotubes via aluminum nanopore template on Si substrate using PECVD Kim MJ, Choi JH, Park JB, Kim SK, Yoo JB, Park CY |
318 - 323 |
Density control of carbon nanotubes using NH3 plasma treatment of Ni catalyst layer Choi JH, Tae YL, Choi SH, Han JH, Yoo JB, Park CY, Jung T, Yu SG, Yi W, Han IT, Kim JM |
324 - 328 |
Fabrication and characterization of phosphorus-implanted mold-type diamond field-emitter arrays Cho ES, Kwon SJ, Yang HC, Uh HS, Kim YH, Park BG, Lee JD |
329 - 334 |
Reduction of perfluorocompound emissions by microwave plasma-torch Hong YC, Kim HS, Uhm HS |
335 - 339 |
Thermal plasma treatment of waste ion-exchange resins doped with metals Nezu A, Morishima T, Watanabe T |
340 - 343 |
Effects of direct-current bias on the carbonization of Si(100) at low temperatures using electron cyclotron resonance chemical vapor deposition Pyo JH, Whang KW |