Thin Solid Films

Thin Solid Films, Vol.515, No.10 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (49 articles)

VI - VI	Proceedings of the Third International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium J: III-V Semiconductors for Microelectronic and Optoelectronic Applications - Singapore, July 3-8, 2005 - Preface Radhakrishnan K, Lourdudoss S, Ing NG
4313 - 4320	InP-based IC technologies Murata K, Sano K, Fukuyama H, Kosugi T, Nakamura M, Sugahara H, Tokumitsu M, Enoki T
4321 - 4326	Ballistic nano-devices for high frequency applications Bollaert S, Cappy A, Roelens Y, Galloo JS, Gardes C, Teukam Z, Wallart X, Mateos J, Gonzalez T, Vasallo BG, Hackens B, Berdnarz L, Huynen I
4327 - 4332	Nanometer transistors for emission and detection of THz radiation Lusakowski J
4333 - 4339	Concepts for diamond electronics Kohn E, Denisenko A
4340 - 4343	Parametric investigation of laser diode bonding using eutectic AuSn solder Teo JWR, Li GY, Ling MS, Wang ZF, Shi XQ
4344 - 4347	Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing Djie HS, Wang DN, Ooi BS, Hwang JCM, Fang XM, Wu Y, Fastenau JM, Liu WK
4348 - 4351	Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m Wang SM, Tangring I, Gu QF, Sadeghi M, Larsson A, Wang XD, Ma CH, Buyanova IA, Chen WM
4352 - 4355	Interdiffusion effect on quantum-well structures grown on GaSb substrate Wang Y, Djie HS, Ooi BS, Rotella P, Dowd P, Aimez V, Cao Y, Zhang YH
4356 - 4361	MOVPE growth of GaN on Si - Substrates and strain Dadgar A, Veit P, Schulze F, Blasing J, Krtschil A, Witte H, Diez A, Hempel T, Christen J, Clos R, Krost A
4362 - 4364	Important aspects for the mass production of GaN-based quantum devices grown by MOCVD Soellner J, Schoen O, Alam A, Schineller B, Kaeppeler J, Heuken M
4365 - 4368	Studies of electron trapping in GaN doped with carbon Lopatiuk O, Chernyak L, Feldman Y, Gartsman K
4369 - 4372	Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation Liu C, Chor EF, Tan LS
4373 - 4377	50 nm metamorphic GaAs and InPHEMTs Thayne I, Elgaid K, Moran D, Cao X, Boyd E, McLelland H, Holland M, Thoms S, Stanley C
4378 - 4383	Recent achievements in the reliability of InP-based HEMTs Suemitsu T
4384 - 4386	Temperature dependence of strain in Al0.22Ga0.78N/GaN heterostructures with and without Si3N4 passivation Chen DJ, Shen B, Zhang KX, Tao YQ, Wu XS, Xu J, Zhang R, Zheng YD
4387 - 4389	Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation Liu YW, Wang H, Radhakrishnan K
4390 - 4392	Profiling the hot carrier induced damage in InP/InGaAs/InP double heterojunction bipolar transistors by using a current transient technique Ng CW, Wang H
4393 - 4396	Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite Suandon S, Sanorpim S, Yoodee K, Onabe K
4397 - 4400	Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition Zhang JX, Qu Y, Chen YZ, Uddin A, Chen P, Chua SJ
4401 - 4404	Luminescence and ultrafast phenomena in InGaN multiple quantum wells Viswanath AK, Lee JI, Kim ST, Yang GM, Lee HJ, Kim D
4405 - 4407	Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition Kim JW, Lee KH, Hong S
4408 - 4411	Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition Hartono H, Chen P, Chua SJ, Fitzgerald EA
4412 - 4418	Raman and luminescence probes for the study of compound semiconductors Jimenez J, Avella M, Martinez O
4419 - 4422	Reduction of thermal oxide desorption etching on gallium arsenide Pun AF, Wang X, Durbin SM, Zheng JP
4423 - 4426	Optical properties of GaInNAs/GaAs quantum well structures Zhao QX, Willander M, Wang SM, Wei YQ, Gu QF, Sadeghi M, Larsson A
4427 - 4429	Investigation of deep level traps in dilute GaAsN layers grown by liquid phase epitaxy Dhar S, Halder N, Mondal A
4430 - 4434	Spectroscopic evaluation of the structural and compositional properties of GaNxAs1-x superlattices grown by molecular beam epitaxy Barker SJ, Williams RS, Mulcahy CPA, Steer MJ, Hopkinson M, Ashwin MJ, Newman RC, Stavrinou PN, Parry G, Jones TS
4435 - 4440	Interdiffusion effect on GaAsSbN/GaAs quantum well structure studied by 10-band k center dot p model Dang YX, Fan WJ, Ng ST, Wicaksono S, Yoon SF, Zhang DH
4441 - 4444	1.31 mu m GaAs-based heterojunction p-i-n photodetectors using InGaAsNSb as the intrinsic layer grown by molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Zhang DH, Ng BK, Loke WK, Liu R, Wee ATS
4445 - 4449	Growth and defects of GaAs and InGaAs films on porous GaAs substrates Buzynin AN, Buzynin YN, Belyaev AV, Luk'vanov AE, Rau EI
4450 - 4453	InGaAsP/InP long wavelength quantum well infrared photodetectors Sun L, Zhang DH, Yuan KH, Yoon SF, Radhakrishnan K
4454 - 4458	MOVPE growth of AlxIn1-xP using tertiarybutylphosphine in pure N-2 ambient Zhao JH, Tang XH, Yin ZY, Sentosa D
4459 - 4461	Influences of silicon doping in quantum dot layers on optical characteristics of InAs/GaAs quantum dot infrared photodetector Huang CY, Ou TM, Chou ST, Tsai CS, Wu MC, Lin SY, Chi JY, Hsu BY, Chi CC
4462 - 4466	Influence of GaNAs strain compensation layers upon annealing of GaIn(N)As/GaAs quantum wells Liu HF, Xiang N
4467 - 4470	(In)GaSb/AlGaSb quantum wells grown on Si substrates Akahane K, Yamamoto N, Gozu SI, Ueta A, Ohtani N
4471 - 4475	Effects of chemical and plasma surface treatments on the O-2-annealed Ni/Au contact to p-Gan Lim J, Chor EF, Tan LS
4476 - 4479	AlGaN/GaN high electron mobility transistors with implanted ohmic contacts Wang HT, Tan LS, Chor EF
4480 - 4483	Impact of forward bias on electroluminescence efficiency in blue and green InGaN quantum well diodes: A comparative study Hori A, Yasunaga D, Fujiwara K
4484 - 4487	GaN-based semiconductor saturable absorber mirror operating around 415 nm Xiang N, Lin F, Li HP, Liu HF, Liu W, Ji W, Chua SJ
4488 - 4491	Band offsets of InXGa1-xN/GaN quantum wells reestimated Biswas D, Kumar S, Das T
4492 - 4495	The self-assemble GaN : Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process Lin CF, Yang ZJ, Dai JJ, Zheng JH, Chang SY
4496 - 4500	Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire Yong AM, Soh CB, Zhang XH, Chow SY, Chua SJ
4501 - 4504	Thermoelectric properties and thermoelectric devices of free-standing GaN and epitaxial GaN layer Kaiwa N, Hoshino M, Yaginuma T, Izaki R, Yamaguchi S, Yamamoto A
4505 - 4508	Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface Zang KY, Wang YD, Wang LS, Tripathy S, Chua SJ, Thompson CV
4509 - 4513	Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN Soh CB, Chua SJ, Chen P, Chi DZ, Liu W, Hartono H
4514 - 4516	Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors Yang H, Wang H, Radhakrishnan K
4517 - 4521	Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate Arulkumaran S, Liu ZH, Ng GI, Cheong WC, Zeng R, Bu J, Wang H, Radhakrishnan K, Tan CL
4522 - 4525	Low threshold current density, highly strained InGaAs laser grown by MOC-ND Chen IL, Hsu WC, Lee TD, Chiou CH