1 - 4 |
Growth of large K2Al2B2O7 crystals Zhang CQ, Wang JY, Hu XB, Jiang HD, Liu YG, Chen CT |
5 - 7 |
Top-seeded growth and morphology of La2CaB10O19 crystals Wang JX, Fu PZ, Wu YC |
8 - 14 |
Electrical properties of silicon- and beryllium-doped GaInP and (AlGa)InP grown by solid source molecular beam epitaxy Sun ZZ, Yoon SF, Loke WK |
15 - 24 |
Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP Jun SW, Stringfellow GB, Shurtleff JK, Lee RT |
25 - 34 |
MOVPE process development for 650 nm VCSELS using optical in-situ techniques Zorn M, Haberland K, Knigge A, Bhattacharya A, Weyers M, Zettler JT, Richter W |
35 - 39 |
Dislocations and 90 degrees-twins in LEC-grown InP crystals Antonov VA, Elsakov VG, Olkhovikova TI, Selin VV |
40 - 48 |
Selective area growth of InP and GaAs by chemical beam epitaxy using a novel temperature control: effects of growth conditions and pattern directions Yu JS, Song JD, Lee YT |
49 - 54 |
Photo luminescence and photocurrent studies of p-type GaN with various thermal treatments Chung SJ, Suh EK, Lee HJ, Mao HB, Park SJ |
55 - 59 |
Two-directional observation of solid-melt interface fluctuation induced by Marangoni flow in a silicon liquid bridge Sumiji M, Nakamura S, Hibiya T |
60 - 64 |
Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer Wang XQ, Du GT, Yin JH, Li M, Li MT, Qu Y, Bo BX, Yang SR |
65 - 72 |
Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP Andre R, Wey S, Tu CW |
73 - 78 |
Growth and optical properties of GaN on Si(111) substrates Lee IH, Lim SJ, Park Y |
79 - 88 |
The small terrace size approximation in the theory of RHEED oscillations Mitura Z, Dudarev SL, Peng LM, Gladyszewski G, Whelan MJ |
89 - 94 |
Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 mu m Saint-Girons G, Patriarche G, Largeau L, Coelho J, Mereuta A, Gerard JM, Sagnes I |
95 - 102 |
Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate Diani M, Simon L, Kubler L, Aubel D, Matko I, Chenevier B, Madar R, Audier M |
103 - 110 |
X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy Li T, Staddon CR, Novikov SV, Fewster PF, Widdowson A, Andrew NL, Kidd P, Harrison I, Winser A, Liao Y, Foxon CT |
111 - 114 |
Energy gap in GaN bulk single crystal between 293 and 1237 K Su CH, Palosz W, Zhu S, Lehoczky SL, Grzegory I, Perlin P, Suski T |
115 - 123 |
Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy Zhang L, Gu SL, Zhang R, Hansen DM, Boleslawski MP, Kuech TF |
124 - 128 |
Synthesis, Raman scattering, and infrared spectra of large-scale GaN nanorods Zhao LX, Meng GW, Peng XS, Zhang XY, Zhang LD |
129 - 134 |
Low-dislocation-density GaN and AlxGa1-xN (x <= 0.13) grown on grooved substrates Sano S, Detchprohm T, Mochizuki S, Kamiyama S, Amano H, Akasaki I |
135 - 139 |
Numerical study of Marangoni convection effect on the melting of GaSb/InSb/GaSb Okano Y, Umemura S, Enomoto Y, Hayakawa Y, Kumagawa M, Hirata A, Dost S |
140 - 148 |
Iodine vapor phase growth of GaN: dependence of epitaxial growth rate on process parameters Tassev V, Bliss D, Suscavage M, Paduano QS, Wang SQ, Bouthillette L |
149 - 153 |
An empirical potential approach to wurtzite-zinc blende structural stability of semiconductors Ito T, Kangawa Y |
154 - 160 |
Growth of InSb epitaxial layers on GaAs (001) substrates by LPE and their characterizations Dixit VK, Rodrigues BV, Bhat HL, Venkataraghavan R, Chandrasekaran KS, Arora BM |
161 - 166 |
Defect density characterization of detached-grown germanium crystals Schweizer M, Cobb SD, Volz MP, Szoke J, Szofran FR |
167 - 172 |
Suppression of Marangoni convection in the FZ melt by high-frequency magnetic field Munakata T, Someya S, Tanasawa I |
173 - 176 |
The development of a novel three-flow six-wafer reactor of metal-organic chemical vapor deposition system for GaN-based structure Wang HX, Amijima Y, Ishihama Y, Sakai S |
177 - 182 |
Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes Wang T, Liu YH, Lee YB, Izumi Y, Ao JP, Bai J, Li HD, Sakai S |
183 - 187 |
Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system Wang HX, Li HD, Amijima Y, Ishihama Y, Sakai S |
188 - 194 |
A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition Chen Z, Lu DH, Yuan HR, Han P, Liu XL, Li YF, Wang XH, Lu Y, Wang ZG |
195 - 200 |
Growth and characterization of ZnSe and phosphorus-doped ZnSe single crystals Sankar N, Ramachandran K, Sanjeeviraja C |
201 - 206 |
Strain in the HWE-grown ZnTe/(100) GaAs hetero-interface Kim BJ, Wang JF, Ishikawa Y, Park YG, Sindo D, Abe S, Masumoto K, Isshiki M |
207 - 211 |
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping Feng ZH, Yang H, Zhang SM, Duan LH, Wang H, Wang YT |
212 - 216 |
Czochralski growth of bismuth germanium silicon oxide (BGSO) single crystal and its characterization Vaithianathan V, Kumaragurubaran S, Senguttuvan N, Santhanaraghavan P, Ishii M, Sinha PK, Ramasamy P |
217 - 223 |
Characterization of a CdZnTe/CdTe heterostructure system prepared by Zn diffusion into a CdTe thin film Bakr NA |
224 - 228 |
Orientation control of zinc oxide films by pulsed current electrolysis Nomura K, Shibata N, Maeda M |
229 - 234 |
Growth of crystalline praseodymium oxide on silicon Osten HJ, Liu JP, Bugiel E, Mussig HJ, Zaumseil P |
235 - 240 |
Apatite formation on TiO2 in simulated body fluid Kasuga T, Kondo H, Nogami M |
241 - 247 |
Influence of the substrate on the growth of alpha,omega-dihexyl-quaterthiophene thin films by organic molecular beam deposition Besana D, Borghesi A, Campione M, Sassella A, Tubino R, Moret M, Rinaldi R, Garnier F |
248 - 252 |
Optical properties of nonlinear potassium lithium niobate crystals Wan YB, Guo XG, Chen J, Yuan XZ, Chu JH, Li J |
253 - 257 |
Extremely smooth YBa2Cu3O7-delta "thin" film grown by liquid phase epitaxy Hao Z, Wu Y, Enomoto Y, Tanabe K, Koshizuka N |
258 - 270 |
Effect of internal radiative heat transfer on interface inversion in Czochralski crystal growth of oxides Kobayashi M, Hagino T, Tsukada T, Hozawa M |
271 - 276 |
Crystal growth of a new superconducting double perovskite A(2)YRu(1-x)Cu(x)O(6)(A=Ba,Sr) Rao SM, Srivastava JK, Tang HY, Ling DC, Chung CC, Yang JL, Sheen SR, Wu MK |
277 - 282 |
Growth of perovskite-type oxides (RE, Sr)(Al, Ta)O-3 as substrates for GaN epitaxial growth (RE = La, Nd) Ito M, Shimamura K, Pawlak DA, Fukuda T |
283 - 286 |
Shape-controlled synthesis of BaWO4 crystals under different surfactants Xie B, Wu Y, Jiang Y, Li FQ, Wu J, Yuan SW, Yu WC, Qian YT |
287 - 292 |
Growth of high-quality homoepitaxial CVD diamond films at high growth rate Teraji T, Mitani S, Wang CL, Ito T |
293 - 299 |
Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process Schuisky M, Kukli K, Aarik J, Lu J, Harsta A |
300 - 306 |
Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H-2 ratio Ri SG, Yoshida H, Yamanaka S, Watanabe H, Takeuchi D, Okushi H |
307 - 312 |
Thickness-dependent structural characteristics of sol-gel-derived epitaxial (PbZr)TiO3 films using inorganic zirconium salt Li AD, Mak CL, Wong KH, Shao QY, Wang YJ, Wu D, Ming NB |
313 - 319 |
Beer law constants and vapor pressures of HgI2 over HgI2(s,l) Su CH, Zhu S, Ramachandran N, Burger A |
320 - 326 |
Crystal growth and optical anisotropy of Y : PbWO4 by modified Bridgman method Gong B, Shen DZ, Ren GH, Zhang HB, Yin ZW |
327 - 332 |
Growth and characterization of crack-free scheelite calcium molybdate single crystal fiber Barbosa LB, Ardila DR, Cusatis C, Andreeta JP |
333 - 339 |
c-Axis oriented AlN films prepared on diamond film substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition Gong H, Jiang X |
340 - 346 |
Investigation on growth and macro-defects of a UV nonlinear optical crystal: ZnCd(SCN)(4) Wang XQ, Zhang JG, Xu D, Lu MK, Yuan DR, Xu SX, Huang J, Zhang GH, Guo SY, Wang SL, Duan XL, Ren Q, Lu GT |
347 - 351 |
Semiconductive Nb-doped BaTiO3 films grown by pulsed injection metalorganic chemical vapor deposition Lemee N, Dubourdieu C, Delabouglise G, Senateur JP, Laroudie F |
352 - 364 |
Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor Danielsson O, Forsberg U, Henry A, Janzen E |
365 - 370 |
Effects of deposition conditions on step-coverage quality in low-pressure chemical vapor deposition of HfO2 Ohshita Y, Ogura A, Hoshino A, Suzuki T, Hiiro S, Machida H |
371 - 376 |
Global analysis of heat transfer in growing BGO crystals (Bi4Ge3O12) by low-gradient Czochralski method Evstratov IY, Rukolaine S, Yuferev VS, Vasiliev MG, Fogelson AB, Mamedov VM, Shlegel VN, Vasiliev YV, Makarov YN |
377 - 383 |
Epitaxial growth of low-resistivity RuO2 films on (1(1)over-bar02)-oriented Al2O3 substrate Frohlich K, Machajdik D, Cambel V, Kostic I, Pignard S |
384 - 388 |
XRD, SEM and TEM analysis of high-T-c YBa2Cu3O7 films deposited on SrTiO3 substrate Taniwaki M, Hirose T |
389 - 393 |
Orientation of Bi4Ti3O12-based ferroelectric thin films prepared on various kinds of substrates by metalorganic chemical vapor deposition Watanabe T, Saito K, Funakubo H |
394 - 400 |
Different growth behavior of SrBi2Ta2O9 ferroelectric films under conventional and rapid annealing processing by metalorganic decomposition Li AD, Wu D, Ling HQ, Wang M, Liu ZG, Ming NB |
401 - 406 |
Metal organic chemical vapor deposition growth of epitaxial SrRuO3 and CaRuO3 thin films with different orientations as the bottom electrode for epitaxial ferroelectric thin film Funakubo H, Oikawa T, Higashi N, Saito K |
407 - 410 |
Growth defects in BiB3O6 crystals observed with white-beam synchrotron topography Teng B, Wang JY, Cheng XF, Wang ZP, Jiang HD, Dong SM, Liu YG, Shao ZS |
411 - 414 |
The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy Wang Z, Sun DL, Hu JF, Cui DL, Xu XH, Wang D, Zhang Y, Wang M, Wang H, Chen HC, Fang CS, Liu XC, Wei K |
415 - 420 |
Effects of annealing and poling conditions on piezoelectric properties of Pb(Zr-0.52,Ti-0.48)O-3 thick films formed by aerosol deposition method Akedo J, Lebedev M |
421 - 424 |
Using thiosemicarbazide as starting material to synthesize CdS crystalline nanowhiskers via solvothermal route Wu J, Jiang Y, Li Q, Liu XM, Qian YT |
425 - 438 |
A model for isotropic crystal growth from vapor on a patterned substrate Khenner M, Braun RJ, Mauk MG |
439 - 449 |
Study of low temperature elaborated tailored optical band gap beta-In2S3-3xO3x thin films Barreau N, Bernede JC, Marsillac S, Mokrani A |
450 - 456 |
Growth of TiO2 thin films on Si(100) and Si(111) substrates using single molecular precursor by high-vacuum MOCVD and comparison of growth behavior and structural properties Jung CK, Kang BC, Chae HY, Kim YS, Seo MK, Kim SK, Lee SB, Boo JH, Moon YJ, Lee JY |
457 - 464 |
Proustite single-crystal growth by the Bridgman-Stockbarger method using ACRT Distanov VE, Nenashev BG, Kirdyashkin AG, Serboulenko MG |
465 - 470 |
Dissolution kinetics of dicalcium phosphate dihydrate under pseudophysiological conditions Kanzaki N, Onuma K, Treboux G, Ito A |
471 - 481 |
Stabilization of a metastable polymorph of sulfamerazine by structurally related additives Gu CH, Chatterjee K, Young V, Grant DJW |
482 - 488 |
Iron oxy-hydroxide crystallization in a hyd ro metallurgical residue Loan M, Parkinson G, Newman M, Farrow J |
489 - 493 |
Control of heterogeneous nucleation of lysozyme crystals by using poly-L-lysine modified substrate Rong L, Komatsu H, Yoda S |
494 - 498 |
Morphological changes and local purities of m-CNB crystals Takiyama H, Okada Y, Arita H, Uchida H, Matsuoka M |
499 - 504 |
Synthesis and crystal growth of binary organic NLO material UNBA Rai RN, Ramasamy P, Lan CW |
505 - 510 |
Synthesis of NiS2-xSex solid solution via an ultrasonic solvothermal route Chen N, Zeng JH, Li FQ, Zhang WQ, Qian YT |
511 - 516 |
New nonlinear optical material: glycine sodium nitrate Bhat MN, Dharmaprakash SM |
517 - 522 |
Sonochemical synthesis and characterizations of monodispersed PbSe nanocrystals in polymer solvent Ding T, Wang H, Xu S, Zhu JJ |
523 - 528 |
Growth and characterization of nonlinear optical material, LAHClBr - a new member of L-arginine halide family Pal T, Kar T, Wang XQ, Zhou GY, Wang D, Cheng XF, Yang ZH |
529 - 540 |
Modification of crystal growth mechanism of yttrium oxalate in metastable solution Sung MH, Kim JS, Kim WS, Hirasawa I, Kim WS |
541 - 546 |
Coloring and habit modification of dyed KDP crystals as functions of supersaturation and dye concentration Hirota S, Miki H, Fukui K, Maeda K |
547 - 554 |
Investigation of aprotinin (BPTI) solutions during nucleation Budayova-Spano M, Bonnete F, Astier JP, Veesler S |
555 - 560 |
Characteristics of hetero-interfaces between MnAs films and Mn-Zn ferrite Ikeda T, Fujioka H, Ono K, Katada H, Ito S, Oshima M, Yoshimoto M, Koinuma H |
561 - 566 |
COSi2 formation using Ti-capping layer Liu ZQ, Feng JY |
567 - 571 |
Misfit strain and magnetic anisotropies in ultrathin Co films hetero-epitaxially grown on Au/Cu/Si(111) Hyomi K, Murayama A, Oka Y, Falco CM |
572 - 588 |
Dynamics of microstructure formation in the two-phase region of peritectic systems Trivedi R, Park JS |
589 - 595 |
Shocking facets in interface growth Tsemekhman V, Wettlaufer JS |
596 - 602 |
Phase equilibria in the pseudo-binary systems LiF-CaAlF5 and LiF-SrAlF5 Chen HB, Fan SJ, Xia HP, Fei YT |
603 - 618 |
Simulation of crystal shape evolution in two dimensions van Veenendaal E, Nijdam AJ, van Suchtelen J |
619 - 625 |
Reversing radial segregation and suppressing morphological instability during vertical Bridgman crystal growth by rotation Lan CW, Yang YW, Tu CY |
626 - 632 |
Flow observation in two immiscible liquid layers subject to a horizontal temperature gradient Someya S, Munakata T, Nishio M, Okamoto K, Madarame H |
633 - 639 |
Direct numerical simulation of solid-layer crystallization from binary melt Fukui K, Maeda K |
640 - 642 |
Surface and structure characteristics of ZnO co-doped LiNbO3 : Er thin films grown by liquid phase epitaxy method Shim JB, Yoshimoto N, Yoon DH |
643 - 643 |
Study of the micro-crystallization of cadmium mercury thiocyanate (CMTC) crystal for laser diode frequency doubling (vol 233, pg 312, 2001) Duan XL, Yuan DR, Zhong ZW, Zhang JG, Wang XQ, Jiang XN, Guo SY, Xu D, Lu MK |