| 373 - 378 |
(111)B growth elimination in GaAs MBE of (001)-(111)B mesa structure by suppressing 2D-nucleation
Kishimoto D, Nishinaga T, Naritsuka S, Noda T, Nakamura Y, Sakaki H |
| 379 - 384 |
Nitridation effects of GaP(111)B substrate on MOCVD growth of InN
Bhuiyan AG, Hashimoto A, Yamamoto A, Ishigami R |
| 385 - 390 |
The viscosity of liquid cadmium telluride
Shcherbak L, Kopach O, Plevachuk Y, Sklyarchuk V, Dong C, Siffert P |
| 391 - 396 |
Growth and properties of hexagonal GaN on GaAs(001) substrate by RF-molecular beam epitaxy using an AlAs nucleation layer
Liu HF, Chen H, Li ZQ, Wan L, Huang Q, Zhou JM, Yang N, Tao K, Han YJ, Luo Y |
| 397 - 401 |
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates
Sun XL, Yang H, Wang YT, Zheng LX, Xu DP, Zhao DG, Li SF, Wang ZG |
| 402 - 410 |
Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5 x 10(20) cm(-3) prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum
Oyama Y, Nishizawa J, Seo K, Suto K |
| 411 - 415 |
Microstructural properties of ZnO epitaxial films grown on p-InP(100) substrates at low temperature
Kim TW, Yoon YS |
| 416 - 422 |
GaAs substrate thermal preheating effect exerted on ZnTe epilayer
Nam S, Yu YM, Rhee J, O B, Lee KS, Choi YD, Lee JW, Sakakibara S |
| 423 - 428 |
High-quality epitaxial growth of in situ phosphorus-doped Si films by promoting dispersion of native oxides in alpha-Si
Kim HS, Shim KH, Lee SY, Lee JY, Kang JY |
| 429 - 437 |
Oxygen distribution at a solid-liquid interface of silicon under transverse magnetic fields
Kakimoto K, Ozoe H |
| 438 - 450 |
Thermodynamic considerations of the epitaxial growth of SiC polytypes
Fissel A |
| 451 - 455 |
Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy
Zhao T, Lu HB, Chen F, Dai SY, Yang GZ, Chen ZH |
| 456 - 458 |
Preparation of zirconia fibers by directional solidification of ZrO2-Fe3O4 eutectic
Kawakami S |
| 459 - 468 |
Influence of atomic layer deposition parameters on the phase content of Ta2O5 films
Kukli K, Ritala M, Matero R, Leskela M |
| 469 - 475 |
Melt growth of (Tb,Lu)(3)Al5O12 mixed garnet fiber crystals
Chani VI, Yoshikawa A, Machida H, Fukuda T |
| 476 - 479 |
Growth and second-harmonic-generation of Bi3+- or Li+-doped GdCa4O(BO3)(3) crystals
Zhang SJ, Cheng ZX, Liu JH, Han JR, Shao ZS, Chen HC |
| 480 - 488 |
The combined influence of supersaturation and impurity concentration on crystal growth
Kubota N, Yokota M, Mullin JW |
| 489 - 499 |
Estimation of crystal growth kinetics using differential scanning calorimetry
Mohan R, Boateng KA, Myerson AS |
| 500 - 506 |
Growth and precipitation of a monoclinic calcium pyrophosphate tetrahydrate indicating auto-inhibition at pH 7
Christoffersen MR, Balic-Zunic T, Pehrson S, Christoffersen J |
| 507 - 511 |
Effects of impurity upon the habit changes in NaBrO3 crystals grown from aqueous solution
Inoue T, Nishioka K |
| 512 - 515 |
Pressure-induced faceting in an NH4Cl crystal
Sawada T, Takemura K |
| 516 - 521 |
Polyhedral (in-)stability by increasing supersaturation - maximum rate of stable growth
Nanev CN |
| 522 - 531 |
On the supersaturation and impurity concentration dependence of segregation coefficient in crystals grown from solutions
Sangwal K, Palczynska T |
| 532 - 542 |
Effect of Cu(II) ions on the growth of ammonium oxalate monohydrate crystals from aqueous solutions: growth kinetics, segregation coefficient and characterisation of incorporation sites
Mielniczek-Brzoska E, Giezak-Kocwin K, Sangwal K |
| 543 - 554 |
Role of competitive interactions in growth rate trends of subtilisin s88 crystals
Asthagiri D, Lenhoff AM, Gallagher DT |
| 555 - 563 |
Probing protein interaction chemistry through crystal growth: structure, mutation, and mechanism in subtilisin s88
Pan WQ, Gallagher DT |
| 564 - 573 |
Non-equilibrium interface of a two-dimensional low-temperature crystal
Shneidman VA, Jackson KA, Beatty KM |
| 574 - 583 |
One-dimensional phase-field model for binary alloys
Popov DI, Regel LL, Wilcox WR |
| 584 - 596 |
Thermoelectric magnetohydrodynamic flow during crystal growth with a moderate or weak magnetic field
Khine YY, Walker JS, Szofran FR |
| 597 - 600 |
Role of lateral growth fronts in the formation of InxGa1-xAs bridge layer on trench substrates
Iida S, Hayakawa Y, Minami S, Koyama T, Kumagawa M |
| 601 - 604 |
Growth of InxGa1-xAs layers with pyramidal morphology on (100)GaAs patterned substrates by liquid-phase epitaxy
Iida S, Balakrishnan K, Koyama T, Hayakawa Y, Kumagawa M |
| 605 - 607 |
Study on a new IR nonlinear optics crystal CsGeCl3
Gu QT, Pan QW, Wu XW, Shi W, Fang CS |
