Journal of Crystal Growth

Journal of Crystal Growth, Vol.240, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (39 articles)

333 - 339	Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy Lee SC, Dawson LR, Brueck SRJ
340 - 346	Crystal structure, carrier concentration and IR-sensitivity of PbTe thin films doped with Ga by two different methods Samoylov AM, Sharov MK, Buchnev SA, Khoviv AM, Dolgopolova EA
347 - 354	Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0001) sapphire Gonsalves M, Kim W, Narayanan V, Mahajan S
355 - 362	Role of interfacial crystallites in the crystallization of alpha-FeA/alpha-Al2O3(0001) thin films Doh SJ, Je JH, Cho TS
363 - 367	Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period Lee HG, Kang TW, Kim TW
368 - 372	Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching Feng G, Zheng XH, Fu Y, Zhu JJ, Shen XM, Zhang BS, Zhao DG, Wang YT, Yang H, Liang JW
373 - 381	Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Nakajima K, Kusunoki T, Azuma Y, Usami N, Fujiwara K, Ujihara T, Sazaki G, Shishido T
382 - 388	Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties Li ZQ, Bang HJ, Piao GX, Sawahata J, Akimoto K
389 - 394	Preparation of CdS nanowires by the decomposition of the complex in the presence of microwave irradiation He J, Zhao XN, Zhu JJ, Wang J
395 - 400	Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer He J, Xu B, Wang ZG, Qu SC, Liu FQ, Zhu TW, Ye XL, Zhao FA, Meng XQ
401 - 406	Investigation of semi-insulating oxygen-doped GaAs Lazarescu MF, Pantelica D, Manea AS, Ghita RV, Negoita F
407 - 414	Study of Ge epitaxial growth on Si substrates by cluster beam deposition Xu JL, Feng JY
415 - 422	Cracking assisted nucleation in chemical vapor deposition of silicon nanoparticles on silicon dioxide Leach WT, Zhu JH, Ekerdt JG
423 - 430	The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy Novikov SV, Winser AJ, Bell A, Harrison I, Li T, Campion RP, Staddon CR, Davis CS, Ponce FA, Foxon CT
431 - 438	Synthesis and characterization of PbSe and PbSe/PbS core-shell colloidal nanocrystals Sashchiuk A, Langof L, Chaim R, Lifshitz E
439 - 444	Nucleation and ripening of seeded InAs/GaAs quantum dots Bennett AJ, Murray R
445 - 453	Density and surface tension of molten calcium fluoride Chen XM, Jinguu S, Nishimura S, Oyama Y, Terashima K
454 - 458	Growth and characterization of CdSe single crystals by modified vertical vapor phase method Zhu SF, Zhao BJ, Jin YR, Yang WB, Chen XM, Den YR
459 - 462	Growth of NaBi(WO4)(2) crystal by modified-Bridgman method Shi HS, Shen DZ, Ren GH, Zhang HB, Gong B, Deng Q
463 - 466	High intense UV-luminescence of nanocrystalline ZnO thin films prepared by thermal oxidation of ZnS thin films Zhang XT, Liu YC, Zhi ZZ, Zhang JY, Lu YM, Xu W, Shen DZ, Zhong GZ, Fan XW, Kong XG
467 - 472	High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn Chen SJ, Liu YC, Ma JG, Zhao DX, Zhi ZZ, Lu YM, Zhang JY, Shen DZ, Fan XW
473 - 478	Effect of lattice oxygen on optical absorption, radiation hardness and thermally stimulated luminescence of BaF2 crystal Sabharwal SC, Sangeeta, Chauhan AK
479 - 483	The photoluminescence of ZnO thin films grown on Si (100) substrate by plasma-enhanced chemical vapor deposition Li BS, Liu YC, Zhi ZZ, Shen DZ, Lu YM, Zhang JY, Fan XW
484 - 488	Ammonia-free chemical bath deposition of CdS films: tailoring the nanocrystal sizes Nemec P, Nemec I, Nahalkova P, Knizek K, Maly P
489 - 494	Bi20TiO32 nanocones prepared from Bi-Ti-O mixture by metalorganic decomposition method Hou Y, Wang M, Xu XH, Wang H, Shang SX, Wang D, Yao WF
495 - 500	Preparation of NaCl color center laser crystals and perturbation effect of ions Wu JH, Lin JM
501 - 507	Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum Kakanakova-Georgieva A, Yakimova R, Gueorguiev GK, Linnarsson MK, Syvajarvi M, Janzen E
508 - 512	Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals Rojo JC, Schowalter LJ, Gaska R, Shur M, Khan MA, Yang J, Koleske DD
513 - 520	Effect of NH3 on the growth characterization of TiN films at low temperature Huang HH, Hon MH, Wang MC
521 - 525	Environmental SEM investigation on surface defects in 0.92Pb(Zn1/3Nb2/3)O-3-0.08PbTiO(3) single crystal Xiao JZ, Shao MJ, Yin ST
526 - 530	Synthesis, thermal and magnetic properties of new metal iodate: (LiFe1/3)(IO3)(2) Lan YC, Chen XL, Xie AY, Jiang PZ, Lin CL
531 - 544	Solutal convection around growing protein crystals and diffusional purification in Space Lee CP, Chernov AA
545 - 548	Growth and characterisation of benzaldehyde semicarbazone (BSC) single crystals Babu RR, Vijayan N, Gopalakrishnan R, Ramasamy P
549 - 559	Solvent effects on the growth kinetics of subtilisin crystals Pan XJ, Glatz CE
560 - 568	A new thermal assembly design for the directional solidification of transparent alloys Liu S, Mazumder P, Trivedi R
569 - 580	A new method for predicting thermal flow stability: application to a heated rotating disk Weyburne DW, Paduano Q
581 - 602	Effect of steady ampoule rotation on radial dopant segregation in vertical Bridgman growth of GaSe Lee H, Pearlstein AJ
603 - 610	High-velocity banding structure in the laser-resolidified hypoperitectic Ti47Al53 alloy Liu YC, Yang GC, Zhou YH
611 - 611	The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (vol 235, pg 411, 2001) Wang Z, Sun DL, Hu JF, Cui DL, Xu XH, Wang D, Zhang Y, Wang M, Wang H, Chen HC