225 - 228 |
Characteristics of BaNbxTi1-xO3 thin films grown by laser molecular beam epitaxy Yan L, Lu HB, Chen ZH, Dai SY, Zhou YL, Yang GZ |
229 - 235 |
Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE Luo MC, Wang XL, Li JM, Liu HX, Wang L, Sun DZ, Zeng YP, Lin LY |
236 - 242 |
Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3 Nishizawa J, Kurabayashi T, Plotka P, Kikuchi H, Hamano T |
243 - 248 |
High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells Carta G, D'Andrea A, Fernandez-Alonso F, El Habra N, Righini M, Rossetto G, Schiumarini D, Selci S, Zanella P |
249 - 256 |
Crystal growth of zinc selenide under mu g-conditions Siche D, Bottcher K, Rinas U, Hartmann H |
257 - 266 |
Dislocation conversion in 4H silicon carbide epitaxy Ha S, Mieszkowski P, Skowronski M, Rowland LB |
267 - 273 |
Crystal growth and some properties of REMn2Si2 (RE = Er, Tm, Yb, Lu) compounds Okada S, Kudou K, Mori T, Iizumi K, Shishido T, Tanaka T, Rogl P |
274 - 280 |
Evidence of hetero-epitaxy of Sm-orthoferrite on MgO(001) substrates by the pulsed laser deposition technique Dumont Y, Vedpathak M, Keller N, Tessier M, Tromson-Carli A, Guyot M |
281 - 286 |
Growth morphology of {100} faces of zinc cadmium thiocyanate crystal investigated by atomic force microscopy Jiang XN, Xu D, Yuan DR, Sun DL, Lu MK, Wang XQ, Zhang GH |
287 - 295 |
Ga2O3 nanomaterials synthesized from ball-milled GaN powders Lee JS, Park K, Nahm S, Kim SW, Kim S |
296 - 304 |
Floating zone growth and characterization of semiconducting Ru2Si3 single crystals Souptel D, Behr G, Ivanenko L, Vinzelberg H, Schumann J |
305 - 312 |
Microstructure of epitaxial erbium-silicide films formed by solid phase reaction on vicinal Si(100) substrate Lee YK, Lee MS, Lee JS |
313 - 317 |
Enhanced magnetoresistance in nanocrystalline La0.6Pb0.4MnO3 thin films Singh A, Aswal DK, Viswanadham CS, Goswami GL, Gupta LC, Gupta SK, Yakhmi JV |
318 - 326 |
Growth mechanism and electrical properties of Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 single crystals by a modified Bridgman method Fang BJ, Xu HQ, He TH, Luo HS, Yin ZW |
327 - 332 |
An experimental investigation of crystal/solvent interactions in the copper (II) acetate monohydrate/propan-1-ol system Braybrook AL, Heywood BR, Karatzas P |
333 - 338 |
Growth of belt-like SnS crystals from ethylenediamine solution An CH, Tang KB, Shen GZ, Wang CR, Yang Q, Hai B, Qian YT |
339 - 341 |
Solubility of emerald in H2SO4 aqueous solution under hydrothermal conditions Chen ZQ, Zhang G, Shen HY, Huang CH |
342 - 348 |
In situ measurement of pH and supersaturation-dependent growth kinetics of the prismatic and pyramidal facets of KDP crystals Sharma SK, Verma S, Shrivastava BB, Wadhawan VK |
349 - 358 |
Crystallization of heavy-metal phosphates in solution - III: Nucleation and growth kinetics of Cd5H2(PO4)(4) center dot 4H(2)O at 37 degrees C Madsen HEL |
359 - 363 |
The study of ANSH crystallization from solution with concentration measurement by magnetic weigh method Xinxin Z, Su GB, He YP, Li ZD, Li GH, Ma JB |
364 - 368 |
Growth of single-crystal PbS nanorods via a biphasic solvothermal interface reaction route Mo MS, Shao MW, Hu HM, Yang L, Yu WC, Qian YT |
369 - 378 |
Controlling the kinetic versus thermodynamic crystallisation of calcium carbonate Dickinson SR, Henderson GE, McGrath KM |
379 - 383 |
Preparation of inorganic salts (CaCO3, BaCO3, CaSO4) nanowires in the Triton X-100/cyclohexane/water reverse micelles Kuang DB, Xu AW, Fang YP, Ou HD, Liu HQ |
384 - 392 |
Coupled growth of unidirectionally solidified Al2O3-YAG eutectic ceramics Mizutani Y, Yasuda H, Ohnaka I, Maeda N, Waku Y |