Journal of Crystal Growth

Journal of Crystal Growth, Vol.256, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (31 articles)

219 - 222	Growth of LiNbO3 crystals by the Bridgman method Chen HB, Xia HP, Wang JH, Zhang JL, Xu JY, Fan SJ
223 - 229	Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Dong YD, Scott DW, Wei Y, Gossard AC, Rodwell MJ
230 - 236	Optical study of interactions of hydrogen with dislocations in CdTe Guergouri K, Brihi N, Marfaing Y, Triboulet R
237 - 242	Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates Novikova SV, Zhao LX, Winser AJ, Kappers M, Barnard JS, Harrison I, Humphreys C, Foxon CT
243 - 247	Defect filtration of hollow pyramidal structured GaSb epilayers grown on GaSb patterned substrates by liquid phase epitaxy Zhang G, Balakrishnan K, Koyama T, Kumagawa M, Hayakawa Y
248 - 253	Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD Chen J, Zhang SM, Zhang BS, Zhu JJ, Shen XM, Feng G, Liu JP, Wang YT, Yang H, Zheng WC
254 - 260	Effect of phosphorus doping on the structural properties in nc-Si : H thin films Gullanar MH, Zhang YH, Chen H, Wei WS, Xu GY, Wang TM, Cui RQ, Shen WZ
261 - 265	Reduction of oxygen during the crystal growth in heavily antimony-doped Czochralski silicon Yang DR, Li CL, Luo MC, Xu J, Que DL
266 - 275	Point defects in CdTe Li YJ, Ma GL, Jie WQ
276 - 282	Structural impact of LPE buffer layer on sublimation grown 4H-SiC epilayers Jacobson H, Yakimova R, Syvajarvi M, Kakanakova-Georgieva A, Tuomi T, Janzen E
283 - 287	Epitaxial growth of platinum thin films on various substrates by facing-target sputtering technique Zhao K, Wong HK
288 - 291	Synthesis of high thermal conductivity nano-scale aluminum nitride by a new carbothermal reduction method from combustion precursor Kuang JC, Zhang CR, Zhou XG, Wang SQ
292 - 297	Growth of new laser crystal Nd : LuVO4 by the Czochralski method Zhang HJ, Kong HK, Zhao SR, Jiu JH, Wang JY, Wang ZP, Gao L, Du CL, Hu XB, Xu XG, Shao ZS, Jiang MH
298 - 304	Growth and characterization of Yb3+ -doped YAlO3 fiber single crystals grown by the modified micro-pulling-down method Shim JB, Yoshikawa A, Nikl M, Solovieva N, Pejchal J, Yoon DH, Fukuda T
305 - 316	Structural and luminescent properties of green emitting SrGa2S4 : Eu thin films prepared by RF-sputtering Chartier C, Barthou C, Benalloul P, Chenot S, Frigerio JM
317 - 323	Dynamic behavior of SiO- and SiO2-coated ZnO ultrafine particles and growth mechanism of Zn2SiO4 crystal Tanigaki T, Suzuki H, Kimura Y, Kido O, Saito Y, Kaito C
324 - 327	Growth and optical properties of Ho,Yb : YAl3(BO3)(4) crystal Li J, Wang JY, Tan H, Cheng XF, Song F, Zhang HJ, Zhao SR
328 - 333	Growth and spectrum properties of Yb : GdVO4 single crystal Hu XL, Chen JZ, Zhuang NF, Chen JL, Lan JM, Yang FT
334 - 340	New form of the Cs2O-B2O3 phase diagram Penin N, Touboul M, Nowogrocki G
341 - 346	Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part I: Effect of C/Si ratio on wide-area homoepitaxy without 3C-SiC inclusions Nakamura S, Kimoto T, Matsunami H
347 - 351	Homoepitaxy of 6H-SiC on nearly on-axis (0001) faces by chemical vapor deposition Part II: Evolution of surface steps Nakamura S, Kimoto T, Matsunami H
352 - 360	In situ observation of growth interfaces by ultrasound Dold P, Heidler M, Drevermann A, Zimmermann G
361 - 367	Features of beryllium aluminate crystal growth by the method of horizontally oriented crystallization Gurov VV, Tsvetkov EG, Kirdyashkin AG
368 - 376	Preparation and characterization of ternary Cu-Sn-E (E = S, Se) semiconductor nanocrystallites via a solvothermal element reaction route Chen XY, Wang X, An CH, Liu JW, Qian YT
377 - 382	Growth of single-crystal Sb2S3 nanorods, dendrites and straw-tied-like architectures via a precursor-solvothermal-pyrolysis route Mo MS, Zhu ZY, Yang XG, Liu XY, Zhang SY, Gao J, Qian YT
383 - 386	Growth of high-quality and large-sized beta-BaB2O4 crystal Chen W, Jiang AD, Wang GF
387 - 392	Growth of 4,4'-dihydroxyazobenzene (DHAB) and its characterization Babu RR, Kumaresan S, Vijayan N, Gunasekaran M, Gopalakrishnan R, Kannan P, Ramasamy P
393 - 400	Release control of industrial biocide (CMI) using clathrate crystal with TEP Kitamura M, Fujimoto M
401 - 406	The overgrowth of vaterite on functionalized styrene-butadiene copolymer Dalas E, Koklas SN
407 - 415	Transversal growth microstructures of quasicrystalline Ti-Zr-Ni films Brien V, Dauscher A, Weisbecker P, Ghanbaja J, Machizaud F
416 - 423	Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition Hu GQ, Kong X, Wan L, Wang YQ, Duan XF, Lu Y, Liu XL