Journal of Crystal Growth

Journal of Crystal Growth, Vol.310, No.5 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (30 articles)

875 - 875	Proceedings of the E-MRS conference, symposium G substrates of wide bandgap materials - Preface Fornari R, Rojo JC, Yakimova R
876 - 880	Status and perspectives of the ammonothermal growth of GaN substrates Hashimoto T, Wu F, Saito M, Fujito K, Speck JS, Nakamura S
881 - 886	Experimental and theoretical analysis of sublimation growth of AlN bulk crystals Makarov YN, Avdeev OV, Barash IS, Bazarevskiy DS, Chemekova TY, Mokhov EN, Nagalyuk SS, Roenkov AD, Segal AS, Vodakov YA, Ramm MG, Davis S, Huminic G, Helava H
887 - 890	Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication Schujman SB, Schowalter LJ, Bondokov RT, Morgan KE, Liu W, Smart JA, Bettles T
891 - 895	Physico-chemical features of the acid ammonothermal growth of GaN Ehrentraut D, Kagamitani Y, Yokoyama C, Fukuda T
896 - 899	Photoluminescence from (0001) GaN grown by the acidic ammonothermal technique Fujii K, Fujimoto G, Goto T, Yao T, Kagamitani Y, Hoshino N, Ehrentraut D, Fukuda T
900 - 905	Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations Kempisty P, Krukowski S
906 - 910	Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor Hemmingsson C, Pozina G, Heuken M, Schineller B, Monemar B
911 - 915	Freestanding 2-in GaN layers using lateral overgrowth with HVPE Hennig C, Richter E, Weyers M, Trankle G
916 - 919	Growth of GaN crystals from chlorine-free gas phase Siche D, Rost HJ, Bottcher K, Gogova D, Fornari R
920 - 923	The roles of low-temperature buffer layer for thick GaN growth on sapphire Lee HJ, Lee SW, Goto H, Lee HJ, Ha JS, Fujii K, Cho MW, Yao T, Hong SK
924 - 929	Low-cost high-quality GaN by one-step growth Tourret J, Gourmala O, Trassoudaine A, Andre Y, Gil E, Castelluci D, Cadoret R
930 - 934	Homoepitaxial seeding and growth of bulk AlN by sublimation Hartmann C, Wollweber J, Seitz C, Albrecht M, Fornari R
935 - 939	Fabrication of free-standing AlN crystals by controlled microrod growth Yazdi GR, Vasillauskas R, Syvajarvi M, Yakimova R
940 - 943	GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers Podhorodecki A, Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Serafinczuk J, Strek W
944 - 947	Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates Ougazzaden A, Rogers DJ, Teherani FH, Moudakir T, Gautier S, Aggerstam T, Saad SO, Martin J, Djebbour Z, Durand O, Garry G, Lusson A, McGrouther D, Chapman JN
948 - 954	Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Cordier Y, Azize M, Baron N, Bougrioua Z, Chenot S, Tottereau O, Massies J, Gibart P
955 - 958	Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching Wellmann PJ, Sakwe SA, Oehlschlager F, Hoffmann V, Zeimer U, Knauer A
959 - 965	Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy Darakchieva V, Monemar B, Usui A, Saenger M, Schubert M
966 - 970	Polytype stability and defects in differently doped bulk SiC Schmitt E, Straubinger T, Rasp M, Vogel M, Wohlfart A
971 - 975	Defect formation and evolution in the step-flow growth of silicon carbide: A Monte Carlo study Camarda M, La Magna A, Fiorenza P, Giannazzo F, La Via F
976 - 981	Prospects for 3C-SiC bulk crystal growth Chaussende D, Mercier F, Boulle A, Conchon F, Soueidan M, Ferro G, Mantzari A, Andreadou A, Polychroniadis EK, Balloud C, Juillaguet S, Camassel J, Pons M
982 - 987	Characterization of stacking faults in thick 3C-SiC crystals using high-resolution diffuse X-ray scattering Boulle A, Chaussende D, Conchon F, Ferro G, Masson O
988 - 992	Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique Hatakeyama T, Ichinoseki K, Fukuda K, Higuchi N, Arai K
993 - 999	Status of hydrothermal growth of bulk ZnO: Latest issues and advantages Dem'yanets LN, Lyutin VI
1000 - 1005	Cathodoluminescence study of ZnO wafers cut from hydrothermal crystals Mass J, Avella M, Jimenez J, Rodriguez A, Rodriguez T, Callahan M, Bliss D, Wang B
1006 - 1009	Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance Son NT, Ivanov IG, Kuznetsov A, Svensson BG, Zhao QX, Willander M, Morishita MN, Ohshima T, Itoh H, Isoya J, Janzen E, Yakimova R
1010 - 1014	MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si Black K, Jones AC, Chalker PR, Gaskell JM, Murray RT, Joyce TB, Rushworth SA
1015 - 1018	Hydrogen-free CVD diamond synthesis with graphite rod heating Hirai T, Hiraga S, Shimada S, Takagi Y, Suda Y, Shimizu O, Kino H
1019 - 1022	The large-sized diamond single-crystal synthesis by hot filament CVD Yamazaki K, Furuichi K, Tsumura I, Takagi Y