Applied Surface Science

Applied Surface Science, Vol.212 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (165 articles)

3 - 3	Applied surface science - Preface Aufray B, Bernardini J, Dallaporta H, Le Lay G, Soukiassian P
4 - 9	Passivation of metal carbide surfaces: relevance to carbon nanotube-metal interconnections Oudghiri-Hassani H, Zahidi E, Siaj M, Wang J, McBreen PH
10 - 16	Surface states resonance on In-terminated InAs(001)4 x 2-c(8 x 2) clean surface De Padova P, Perfetti P, Quaresima C, Richter C, Zerrouki M, Heckmann O, Ilakovac V, Hricovini K
17 - 25	Atomic structure and magnetic properties of Mn on InAs(100) Hricovini K, De Padova P, Quaresima C, Perfetti P, Brochier R, Richter C, Ilakovac V, Heckmann O, Lechevallier L, Bencok P, Le Fevre P, Teodorescu C
26 - 32	Effect of end-substitution of hexyl chains on the growth and electrical properties of quaterthiophene thin films Ackermann J, Videlot C, Raynal P, El Kassmi A, Dumas P
33 - 37	Interplay between surface and electronic structures in epitaxial Ag ultra thin films on Cu(111) Bendounan A, Cercellier H, Fagot-Revurat Y, Kierren B, Yurov VY, Malterre D
38 - 42	Thermo-coloration of SmS thin flims by XPS in situ observation Mori Y, Tanemura S, Koide S, Senzaki Y, Jin P, Kaneko K, Terai A, Nabotova-Gabin N
43 - 46	Structural transitions at the surface of the decagonal quasicrystal Al-Co-Ni Fluckiger T, Michlmayr T, Biely C, Luscher R, Erbudak A
47 - 51	Potassium assembled on the InAs(110) surface: from nanowires to two-dimensional layers Gavioli L, Padovani M, Spiller E, Sancrotti M, Betti MG
52 - 56	Temperature-dependent interaction of C-60 with Ge(111)-c(2 x 8) Bertoni G, Cepek C, Sancrotti M
57 - 61	Molecular orientation of C-60 on Pt(111) determined by X-ray photoelectron diffraction Giovanelli L, Cepek C, Floreano L, Magnano E, Sancrotti M, Gotter R, Morgante A, Verdini A, Pesci A, Ferrari L, Pedio M
62 - 66	Matrix element effects on the Fermi surface mapping by angle resolved photoemission from Bi2Sr2CaCU2O8+x superconductors Roca L, Izquierdo M, Tejeda A, Gu GD, Avila J, Asensio MC
67 - 72	Shadow bands at the Fermi surface of Bi2Sr2CaCu2O8+x superconductors: structural or antiferromagnetic origin? Izquierdo M, Roca L, Gu DG, Avila J, Asensio MC
73 - 77	Direct observation of localized unoccupied states by synchrotron radiation two-color resonant photoemission Hsiao HL, Yang AB, Hwang HL
78 - 84	Surface particularities in pulsed laser ablation/deposition of the ferromagnetic alloy NiMnSb Grigorescu CEA, Manea SA, Mitrea M, Monnereau O, Notonier R, Tortet L, Keschawarz R, Giapintzakis J, Klini A, Zorba V, Androulakis J, Fotakis C
85 - 91	Structure properties of nanostructured Fe films grown on c(2 x 2) N/Cu(100) self-organised surface Finetti P, Borgatti F, Felici R, Gunnella R, D'Addato S
92 - 96	Surface fracture of glassy materials as detected by real-time atomic force microscopy (AFM) experiments Celarie F, Prades S, Bonamy D, Dickele A, Bouchaud E, Guillot C, Marliere C
97 - 100	Surface XPS core-level shifts of FeS2 Mattila S, Leiro JA, Laajalehto K
101 - 104	Atomic and electronic structures of heteroepitaxial C-60 film grown on Ni(111), Cu(111) Kiguchi M, Iizumi K, Saiki K, Koma A
105 - 109	STM and STS on single dopants and Au-induced chains at the Si(111) surface Surgers C, Schock M, Trappmann T, Von Lohneysen H
110 - 115	Investigations of Cd1-xMnxTe crystals by means of ellipsometry and auger electron spectroscopy Wronkowska AA, Wronkowski A, Bukaluk A, Stefanski M, Arwin H, Firszt F, Legowski S, Meczynska H, Hradil K
116 - 121	Expression of the optical constants of chalcogenide thin films using the new parameterization dispersion model Franta D, Ohlidal I, Frumar M, Jedelsky J
122 - 126	Luminescent properties of single quantum well of CdTe on ZnTe grown by hot-wall epitaxy Yoneyama Y, Kuwabara H, Tatsuoka H
127 - 130	Optical manifestation of magnetoexcitons in near-surface quantum wells Flores-Desirena B, Perez-Rodriguez F
131 - 134	Sb/Si(110) 2x3 - a photoelectron diffraction study Schurmann M, Dreiner S, Berges U, Westphal C
135 - 139	Atomic structure and formation process of the Si (111)-Sb(root 7 x root 7) surface phase Gruznev D, Rao BV, Furukawa Y, Mori M, Tambo T, Lifshits VG, Tatsuyama C
140 - 145	Spectroscopic multiple angle reflection and transmission ellipsometry of aggregated gold films Truong VV, Belley R, Bader G, Hache A
146 - 150	Structure of Ga-stabilized GaAs(001) surfaces at high temperatures Ohtake A, Tsukamoto S, Pristovsek M, Koguchi N
151 - 156	Study of the (001) cleavage planes of guanidinium methanesulfonate single crystals by AFM and He diffraction Bracco G, Ying H, Acker J, Ward MD
157 - 161	Inelastic electron analysis in reflection high-energy electron diffraction condition Nakahara H, Hishida T, Ichimiya A
162 - 165	Emission of lights of various colors from p-CdS : Cu/n-CdS thin-film diodes Kashiwaba Y, Sato J, Abe T
166 - 170	Thermal magnetic properties of Fe films on Cu3Au investigated by magneto optical Kerr effect Bisio F, Gonella G, Canepa M, Terreni S, Mattera L
171 - 176	Interdiffusion and magnetism in Ni/Cu multilayers Meunier A, Gilles B, Verdier M
177 - 183	Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization Pons M, Baillet F, Blanquet E, Pernot E, Madar R, Chaussende D, Mermoux M, Di Coccio L, Ferret P, Feuillet G, Faure C, Billon T
184 - 192	Control in the initial growth stage of heteroepitaxial Si1-x-yGexCy on Si(001) substrates Zaima S, Sakai A, Yasuda Y
193 - 196	Si epitaxial growth on SiH3CH3 reacted Ge(100) and intermixing between Si and Ge during heat treatment Takahashi K, Fujiu M, Sakuraba M, Murota J
197 - 200	Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(100) to SiH4 and to Ar plasma Sakuraba M, Muto D, Seino T, Murota J
201 - 203	Investigation of interface roughness and roughness correlation in solid-state multilayer by coplanar diffuse X-ray scattering Busch I, Stumpel J
204 - 208	fEffects of As+-implantation on the formation of iron silicides in Fe thin films on (111)Si Lu HT, Chueh YL, Chou LJ, Chen LJ
209 - 212	Work function of impurity-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean low-pressure CVD Shim HY, Sakuraba M, Tsuchiya T, Murota J
213 - 218	Ag island nucleation on Ge(111)-c(2 x 8) Padovani M, Magnano E, Bertoni G, Spreafico V, Gavioli L, Sancrotti M
219 - 223	Si(111) step fluctuations in reflection electron microscopy at 1100 degrees C: anomalous step-step repulsion Schroll RD, Cohen SD, Einstein TL, Metois JJ, Gebremariam H, Richards HL, Williams ED
224 - 229	Mg deposition on Ag(100): temperature evolution of the structural and electronic properties Moroni R, Bisio F, Mattera L
230 - 234	Some evidences of ordering in InGaP layers grown by liquid phase epitaxy Prutskij TA, Diaz-Arencibia P, Mintairov A, Merz J, Kosel T
235 - 243	The growth of silver films on Si(111)-(7 x 7) studied by using photoelectron diffraction Perez-Dieste V, Sanchez JF, Izquierdo M, Roca L, Avila J, Asensio MC
244 - 248	Equilibrium surface segregation enthalpy of Ge in concentrated amorphous SiGe alloys Nyeki J, Girardeaux C, Erdelyi G, Rolland A, Bernardini J
249 - 254	Surface electromigration of in-covered Si high-index surfaces Sakamoto K, Matsubayashi Y, Shimada M, Yamada T, Natori A, Yasunaga H
255 - 263	Preparation and characterization of polycrystalline anatase and rutile TiO2 thin films by rf magnetron sputtering Miao L, Jin P, Kaneko K, Terai A, Nabatova-Gabain N, Tanemura S
264 - 266	An XPD and LEED study of highly strained ultrathin Ni films on Pd(100) Petukhov M, Rizzi GA, Sambi M, Granozzi G
267 - 270	Growth of Zn1-xMnxTe films on GaAs(100) by hot-wall epitaxy Kuwabara H, Sakamoto R, Tatsuoka H, Nakanishi Y
271 - 278	Electrolytic co-deposition of a nickel/fluorographite composite layer on polycrystalline copper Plumier F, Chassaing E, Terwagne G, Delhalle J, Mekhalif Z
279 - 286	Fabrication and characterization of metal and semiconductor SmS thin films by rf/dc dual magnetron sputtering Tanemura S, Koide S, Senzaki Y, Miao L, Hirai H, Mori Y, Jin P, Kaneko K, Terai A, Nabatova-Gabain N
287 - 290	Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane George VC, Das A, Roy M, Dua AK, Raj P, Zahn DRT
291 - 295	Growth and dissolution kinetics of Au/Pb(111): an AES-LEED study Oughaddou H, Leandri C, Aufray B, Girardeaux C, Bemardini J, Le Lay G, Biberian JP, Barrett N
296 - 304	Superlattices of self-assembled Ge/Si(001) quantum dots Le Thanh V, Yam V
305 - 310	Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications Shao LX, Chang KH, Hwang HL
311 - 318	III-V nanoelectronics and related surface/interface issues Hasegawa H
319 - 324	STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer Oberbeck L, Hallam T, Curson NJ, Simmons MY, Clark RG
325 - 328	Structural evolution in Ge+ implantation amorphous Si He JH, Wu WW, Lin HH, Cheng SL, Chueh YL, Chou LJ, Chen LJ
329 - 333	Adsorption and decomposition of t-butylphosphine (TBP) on an InP(001)-(2 x 4)/c(2 x 8) surface studied by STM, TPD, and HREELS Fukuda Y, Kobayashi T, Shirai T, Kadotani N, Shimomura M
334 - 338	Ga-induced nano-facet formation on Si(1 1 n) surfaces Nakahara H, Suzuki H, Miyata S, Ichimiya A
339 - 343	Auto-correlation function analysis of crystallization in amorphous SiGe thin films Chiang TF, Wu WW, Cheng SL, Lin HH, Lee SW, Chen LJ
344 - 348	He diffraction study of the time decay of ripple structures on ion bombarded Ag(110) Pedemonte L, Bracco G, Boragno C, de Mongeot FB, Valbusa U
349 - 352	Synthesis and laser processing of ZnO nanocrystalline thin films Ozerov I, Nelson D, Bulgakov AV, Marine W, Sentis M
353 - 359	Atomic structures of Ag/Ge(111) root 39x root 39 and 6x6 surfaces studied by STM: observations of bias dependent reconstruction transformations Zhang HM, Uhrberg RIG
360 - 366	Temperature dependence of ordered cobalt nanodots growth on Au(788) Baudot G, Rohart S, Repain V, Ellmer H, Girard Y, Rousset S
367 - 372	The role of microstructure in nanocrystalline conformal Co0.9W0.02P0.08 diffusion barriers for copper metallization Kohn A, Eizenberg M, Shacham-Diamand Y
373 - 377	A structural analysis of Bi/Si(100) 2 x n surfaces by ICISS Oishi N, Saitoh N, Naitoh M, Nishigaki S, Shoji F, Nakanishi S, Umezawa K
378 - 382	SiC nanofibers grown by high power microwave plasma chemical vapor deposition Honda S, Baek YG, Ikuno T, Kohara H, Katayama M, Oura K, Hirao T
383 - 387	Surface morphology and field emission characteristics of carbon nanofiber films grown by chemical vapor deposition on alloy catalyst Kamada K, Ikuno T, Takahashi S, Oyama T, Yamamoto T, Kamizono M, Ohkura S, Honda S, Katayama M, Hirao T, Oura K
388 - 392	Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology Pereira MA, Diniz JA, Doi I, Swart JW
393 - 396	Highly aligned carbon nanotube arrays fabricated by bias sputtering Hayashi N, Honda S, Tsuji K, Lee KY, Ikuno T, Fujimoto K, Ohkura S, Katayama M, Oura K, Hirao T
397 - 401	Presumption and improvement for gallium oxide thin film of high temperature oxygen sensors Ogita M, Yuasa S, Kobayashi K, Yamada Y, Nakanishi Y, Hatanaka Y
402 - 405	Transparent ellipsometric memory with thin film multilayer structures -Optical memory based on the ellipsometric principle Tazawa M, Xu G, Jin P
406 - 410	Si-LiG process for inductive meso systems Barbaroto PR, Doi I, Ferreira LOS
411 - 416	Micro-patterning of self-supporting layers with conducting polymer wires for 3D-chip interconnection applications Ackermann J, Videlot C, Nguyen TN, Wang L, Sarro PM, Crawley D, Nikolic K, Forshaw M
417 - 422	Perylenes and phthalocyanines on GaAs(001) surfaces Evans DA, Steiner HJ, Vearey-Roberts AR, Dhanak V, Cabailh G, O'Brien S, McGovern IT, Braun W, Kampen TU, Park S, Zahn DRT
423 - 427	Transport gap of organic semiconductors in organic modified Schottky contacts Zahn DRT, Kampen TU, Mendez H
428 - 432	Time-resolved photoluminescence study of excitons in thin PTCDA films at various temperatures Kobitski AY, Scholz R, Salvan G, Kampen TU, Wagner HP, Zahn DRT
433 - 437	Influence of substrate surfaces on the growth of organic films Das A, Salvan G, Kampen TU, Hoyer W, Zahn DRT
438 - 440	Electronic structures of unoccupied states in lithium phthalocyanine thin films of different polymorphs studied by IPES Sato N, Yoshida H, Tsutsumi K, Sumimoto M, Fujimoto H, Sakaki S
441 - 445	IRRAS and LEED studies of films of the long chain n-alkane n-C44H90 on Cu(100) and Cu(110) Hosoi Y, Niwa Y, Sakurai Y, Ishii H, Ouchi Y, Seki K
446 - 451	Direct comparison of the electronic coupling efficiency of sulfur and selenium alligator clips for molecules adsorbed onto gold electrodes Patrone L, Palacin S, Bourgoin JP
452 - 457	Effect of the solvent on the formation of n-dodecanethiol films on a polycrystalline Ag90Ni10 substrate Laffineur F, Couturier N, Delhalle J, Mekhalif Z
458 - 463	A discussion of conduction in organic light-emitting diodes Mori T, Ogawa T, Cho DC, Mizutani T
464 - 471	Self-assembly of (3-mercaptopropyl)trimethoxysilane on polycrystalline zinc substrates towards corrosion protection Sinapi F, Forget L, Delhalle J, Mekhalif Z
472 - 480	Electropolymerisation of poly(3,4-ethylene-dioxythiophene) on nickel substrates Mekhalif Z, Plumier F, Delhalle J
481 - 484	Scanning tunneling microscopy of locally derivatized self-assembled organic monolayers Battaglini N, Klein H, Dumas P, Moustrou C, Samat A
485 - 490	Pseudogap structure in icosahedral ZnMgY and ZnMgHo quasicrystals Suchodolskis A, Assmus W, Cechavicius B, Dalmas J, Giovanelli L, Gothelid M, Karlsson UO, Karpus V, Le Lay G, Sterzel R, Uhrig E
491 - 496	Investigation of gas-surface interactions at self-assembled silicon surfaces acting as gas sensors Narducci D, Bernardinello P, Oldani M
497 - 500	Photoconductivity and oxygen adsorption of Cu-phthalocyanine thin films on cadmium sulphide surfaces Komolov AS, Moller PJ
501 - 507	Orientation of perylene derivatives on semiconductor surfaces Kampen TU, Salvan G, Paraian A, Himcinschi C, Kobitski AY, Friedrich M, Zahn DRT
508 - 514	Reactions of iodobenzene on Pd(111) and Pd(110) von Schenck H, Weissenrieder J, Hellden S, Akermark B, Gothelid M
515 - 519	Low-energy molecular exciton in indium/perylene-3,4,9, 10-tetracarboxylic dianhydride system observed by electronic energy loss spectroscopy Nakamura T, Iwasawa K, Kera S, Azuma Y, Okudaira KK, Ueno N
520 - 524	Raman analysis of first monolayers of PTCDA on Ag(111) Wagner V, Muck T, Geurts J, Schneider M, Umbach E
525 - 529	XPS study of irradiation damage and different metal-sulfur bonds in dodecanethiol monolayers on gold and platinum surfaces Laiho T, Leiro JA, Lukkari J
530 - 536	Comparative study of the monolayers of CH3-(CH2)n-SiCl3 and CH3-(CH2)(n)-PO(OH)(2), n=4 and 13, adsorbed on polycrystalline titanium substrates Philippin G, Delhalle J, Mekhalif Z
537 - 541	Scanning tunneling microscopy study of pentacene adsorption on Ag/Si(111)-(root 3 x root 3)R30 degrees Guaino P, Carty D, Hughes G, Moriarty P, Cafolla AA
542 - 546	Peculiar features in the electrical characteristics of CuPc based diodes Pham G, Kampen TU, Thurzo I, Friedrich M, Zahn DRT
547 - 555	Chemical and electronic structure of SiO2/Si interfacial transition layer Hattori T, Takahashi K, Seman MB, Nohira H, Hirose K, Kamakura N, Takata Y, Shin S, Kobayashi K
556 - 562	Characterization by ion beams of surfaces and interfaces of alternative materials for future microelectronic devices Krug C, Stedile FC, Radtke C, da Rosa EBO, Morais J, Freire FL, Baumvol IJR
563 - 569	Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices Lucovsky G, Raynor GB, Zhang Y, Fulton CC, Nemanich RJ, Appel G, Ade H, Whitten JL
570 - 574	Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling Radtke C, Baumvol IJR, Stedile FC, Vickridge IC, Trimaille I, Ganem J, Rigo S
575 - 578	In situ observation of oxygen-induced anisotropic surface etching processes at 6H-SiC(0001) by variable temperature scanning tunneling microscope Okado H, Kubo O, Yamaoka N, Itou S, Katayama M, Oura K
579 - 582	A metastable-induced electron spectroscopy study on the process of oxygen adsorption at a Ni(110) surface Ikari T, Kojima T, Yamada K, Naitoh M, Nishigaki S
583 - 588	Photoluminescence properties of Tb3+ and Eu3+ ions hosted in TiO2 matrix Conde-Gallardo A, Garcia-Rocha M, Palomino-Merino R, Velasquez-Quesada MP, Hernandez-Calderon I
589 - 594	Interaction between oxygen and InAs(111) surfaces, influence of the electron accumulation layer Leandersson KS, Gothelid M, Tjernberg O, Karlsson UO
595 - 600	Morphology changes of Si(001) surfaces during wet chemical halogenation Pedemonte L, Bracco G, Relini A, Rolandi R, Narducci D
601 - 606	First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPES Petit M, Ould-Metidji Y, Robert C, Bideux L, Gruzza B, Matolin V
607 - 613	Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method Dongmo H, Carlotti JF, Bruguier G, Guasch C, Bonnet J, Gasiot J
614 - 618	Nitridation of GaAs(100) substrates and Ga/GaAs systems studied by XPS spectroscopy Ould-Metidji Y, Bideux L, Baca D, Gruzza B, Matolin V
619 - 624	Generation of ammonia plasma using a helical antenna and nitridation of GaAs surface Yasui K, Arayama T, Okutani S, Akahane T
625 - 629	Initial oxynitridation of a Si(100) 2 x 1 surface by the annealing and low energy nitrogen ion exposure Kim KJ, Ihm K, Jeon C, Hwang CC, Kang TH, Kim B
630 - 635	Direct image observation of the initial forming of passive thin film on stainless steel surface by PEEM Kang TH, Ihm K, Hwang CC, Jeon C, Kim KJ, Kim JY, Lee MK, Shin HJ, Kim B, Chung S, Park CY
636 - 643	The influence of fluoride anions on the silicon carbide surface oxidation in aqueous solutions Socha RP, Vayrynen J
644 - 648	Oxide formation and passivation for micro- and nano-electronic devices Bae C, Lucovsky G
649 - 653	On the re-oxidation of silicon(001) surfaces modified by self-assembled monolayers Narducci D, Pedemonte L, Bracco G
654 - 660	Optical properties of polycrystalline and epitaxial anatase and rutile TiO2 thin films by rf magnetron sputtering Tanemura S, Miao L, Jin P, Kaneko K, Terai A, Nabatova-Gabain N
661 - 666	Structural characterization of TiO2/TiNxOy (delta-doping) heterostructures on (110)TiO2 substrates Chiaramonte T, Cardoso LP, Gelamo RV, Fabreguette F, Sacilotti M, de Lucas MCM, Imhoff L, Bourgeois S, Kihn Y, Casanove MJ
667 - 673	EPES applied to the study of gold/alumina interfaces Gruzza B, Robert C, Bideux L
674 - 678	Physico-chemistry and morphology of silicon surface during the first stage of alumina deposition Jonnard P, Desmaison J, Hidalgo H, Rossignol F, Tixier C, Tristant P
679 - 683	Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer Noh J, Sakuraba M, Murota J, Zaima S, Yasuda Y
684 - 688	W delta doping in Si(100) using ultraclean low-pressure CVD Kanaya T, Sakuraba M, Murota J
689 - 693	Spectroscopic studies of TM/Si and TM/SiO2 interfaces Jarrige I, Jonnard P, Holliger P, Nguyen TP
694 - 700	Electron induced epitaxy of cubic ZnS on GaAs(100) surfaces Shimaoka G, Arakawa T, Suzuki Y
701 - 704	Metal induced gap states at LiCl-Cu(001) interface studied by X-ray absorption fine structure Kiguchi M, Katayama M, Yoshikawa G, Saiki K, Koma A
705 - 710	Dynamics of c(4 x 2) phase-transition in Si(100) surfaces Natori A, Osanai M, Nakamura J, Yasunaga H
711 - 714	c(4x8) periodicity in ultrathin iron silicides on Si(111) Garreau G, Hajjar S, Pelletier S, Imhoff M, Pirri C
715 - 723	Kinetics study of antimony adsorption on Si(111) Lapena L, Muller P, Quentel G, Guesmi H, Treglia G
724 - 729	Structural stability of the Ge/Si(113)-2 x 2 surface Nakamura J, Zhang ZH, Sumitomo K, Omi H, Ogino T, Natori A
730 - 734	Si c(4 x 4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(001) using monomethylsilane and dimethylsilane Narita Y, Inubushi T, Yasui K, Akahane T
735 - 741	An investigation of sidewall adhesion in MEMS Ashurst WR, de Boer MP, Carraro C, Maboudian R
742 - 748	Strain effects in device processing of silicon-on-insulator materials Camassel J, Tiberj A
749 - 752	Model for defect generation at the (100)Si/SiO2 interface during electron injection in MOS structures Houssa M, Autran JL, Heyns MM, Stesmans A
753 - 759	Electron capture kinetics at AlF3/SiO2 interfaces Thurzo I, Kampen TU, Zahn DRT, Konig D
760 - 764	Formation of silicon nano-dots in luminescent silicon nitride Pei ZW, Hwang HL
765 - 769	An innovative a-Si : H p-i-n based X-ray medical image detector for low dosage and long exposure applications Fann SS, Jiang YL, Hwang HL
770 - 774	Chemical analysis and optical properties of metallic nanoclusters Downes A, Dumas P
775 - 781	Formation and characterization of TiO2 thin films with application to a multifunctional heat mirror Jin P, Miao L, Tanemura S, Xu G, Tazawa M, Yoshimura K
782 - 786	Surface-induced broadening and shift of exciton resonances in the thin film regime Atenco-Analco N, Perez-Rodriguez F, Makarov NM
787 - 791	Auger electron spectroscopy determination of surface self-diffusion coefficients from growth of voids in thin deposited films Beszeda I, Szabo IA, Gontier-Moya EG
792 - 796	Electropolymerized poly-4-vinylpyridine for removal of copper from wastewater Viel P, Palacin S, Descours F, Bureau C, Le Derf F, Lyskawa J, Salle M
797 - 803	Probing a molecular electronic transition by two-colour sum-frequency generation spectroscopy Humbert C, Dreesen L, Nihonyanagi S, Masuda T, Kondo T, Mani AA, Uosaki K, Thiry PA, Peremans A
804 - 808	SIMS characterization of hydrogen transport through SiO2 by low-temperature hydrogen annealing Kawashima Y, Liu ZY, Terashima K, Hamada K, Fukutani K, Wilde M, Aoyagi S, Kudo M
809 - 814	New technique to characterise thin oxide films under electronic irradiation Liebault J, Zarbout K, Moya-Siesse D, Bernardini J, Moya G
815 - 819	Dependence of structural and luminescent characteristics of Y2O3 : Er thin film phosphors on substrate Nakanishi Y, Kimura K, Kominami H, Nakajima H, Hatanaka Y, Shimaoka G
820 - 825	Quantum structures in SiC Bechstedt F, Fissel A, Furthmuller J, Kaiser U, Weissker HC, Wesch W
826 - 828	Role of interface suboxide Si atoms on the electronic properties of Si/SiO2 superlattices Carrier P, Lu ZH, Lewis LJ, Dharma-wardana MWC
829 - 832	Transport properties of magnetic atom bridges controlled by a scanning tunneling microscope Nakanishi H, Kishi T, Kasai H, Komori E, Okiji A
833 - 838	Segregation in ternary alloys: an interplay of driving forces Luyten J, Helfensteyn S, Creemers C
839 - 843	Contributions to the infrared effective charges of oxides and chalcogenides from equilibrium charge and dynamic charge redistribution during normal mode motions Sremaniak LS, Whitten JL, Menon M, Lucovsky G
844 - 849	Modelling surface phenomena in Pd-Ni alloys Helfensteyn S, Luyten J, Feyaerts L, Creemers C
850 - 855	Surface properties of chalcogen passivated GaAs(100) Kampen TU, Zahn DRT, Braun W, Gonzalez C, Benito I, Ortega J, Jurczyszyn L, Blanco JM, Perez R, Flores F
856 - 860	Surface-state mediated three-adsorbate interaction: exact and numerical results and simple asymptotic expression Hyldgaard P, Einstein TL
861 - 865	Chalcogen passivation of GaAs(100) surfaces: theoretical study Szucs B, Hajnal Z, Frauenheim T, Gonzalez C, Ortega J, Perez R, Flores F
866 - 871	Relation between surface stress and (1 x 2) reconstruction for (110) fcc transition metal surfaces Olivier S, Saul A, Treglia G
872 - 878	Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN Roucka R, Tolle J, Chizmeshya AVG, Crozier PA, Poweleit CD, Smith DJ, Kouvetakis J, Tsong IST
879 - 884	Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy Magnano E, Cepek C, Sancrotti M, Siviero F, Vinati S, Lenardi C, Barborini E, Piseri P, Milani P
885 - 889	Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures Ishikawa F, Hasegawa H
890 - 896	Allowed combinations and overtones of vibrational modes in wurtzite GaN Kunert HW
897 - 900	Influence of intermediate-temperature buffer layer on flicker noise characteristics of MBE-grown GaN thin films and devices Leung BH, Fong WK, Surya C
901 - 906	Surface and overgrowth analysis of the II-VI compound BeTe Wagner V, Wagner J, Hansen L, Gundel S, Schmidt G, Geurts J
907 - 911	Ohmic contact to p-type GaN using a novel Ni/Cu scheme Liu SH, Hwang JM, Hwang ZH, Hung WH, Hwang HL
912 - 919	Comparison of classical and BEN nucleation studied on thinned Si(111) samples: a HRTEM study Arnault JC, Pecoraro S, Le Normand F, Werckmann J
920 - 925	3C-SiC thin epilayer formation at low temperature using ion beams Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y