Applied Surface Science

Applied Surface Science, Vol.190, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (96 articles)

1 - 1	Proceedings of the Eighth International Conference on the Formation of Semiconductor Interfaces, Sapporo, Japan, June 10-15, 2001 - Preface Okumura T, Fukui T, Hasegawa H
2 - 10	Band structures and band offsets of high K dielectrics on Si Robertson J
11 - 15	Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer Ishikawa Y, Kumezawa M, Nuryadi R, Tabe M
16 - 19	Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing Ishiyama T, Nagase M, Omura Y
20 - 25	Time evolution of interface roughness during thermal oxidation on Si(001) Takakuwa Y, Ishida F, Kawawa T
26 - 29	Competing thermal relaxation processes in response to intrinsic defects produced by exposing SiO2 to synchrotron radiation Akazawa H
30 - 34	Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics da Silva EF, de Vasconcelos EA, Stosic BD
35 - 38	The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors Sombra SS, Costa UMS, Freire VN, de Vasconcelos EA, da Silva EF
39 - 42	Compositional depth profiling of ultrathin oxynitride/Si interface using XPS Kato H, Nishizaki K, Takahashi K, Nohira H, Tamura N, Hikazutani K, Sano S, Hattori T
43 - 47	Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys Johnson RS, Lucovsky G, Hong JG
48 - 55	A molecular orbital model for the electronic structure of transition metal atoms in silcate and aluminate alloys Lucovsky G, Whitten JL, Zhang Y
56 - 59	Penetration of electronic states from silicon substrate into silicon oxide Takahasi K, Seman MB, Hirose K, Hattori T
60 - 65	Real time observation of oxygen chemisorption states on Si (001)-2 x 1 during supersonic oxygen molecular beam irradiation Yoshigoe A, Teraoka Y
66 - 74	Characterization of high-k gate dielectric/silicon interfaces Miyazaki S
75 - 79	Si 2p and O 1s photoemission from oxidized Si(001) surfaces depending on translational kinetic energy of incident O-2 molecules Teraoka Y, Yoshigoe A
80 - 87	Observation of triangular terraces and triangular craters of CaF2 film on Si(111) substrate Horio Y, Satoh S
88 - 95	Structural and electrical properties of crystalline (1-x)Ta2O5-xTiO(2) thin films fabricated by metalorganic decomposition Salam KMA, Konishi H, Mizuno M, Fukuda H, Nomura S
96 - 102	In-phase step wandering on vicinal Si(111) surfaces Natori A, Suga N
103 - 107	Semiconductor-metal-semiconductor transition: valence band photoemission study of Ag/Si(111) surfaces Zhang HM, Sakamoto K, Uhrberg RIG
108 - 112	Changes of phase and intensity of optical SHG with Ag deposition on Si (111)-7 x 7 surfaces Hirayama H, Komizo T, Kawata T, Takayanagi K
113 - 120	Strain due to nickel diffusion into hydrogen-terminated Si(111) surface Emoto T, Akimoto K, Ichimiya A, Hirose K
121 - 128	Core-level photoemission of the Si(111)-root 21 x root 21-Ag surface using synchrotron radiation Tong X, Ohuchi S, Tanikawa T, Harasawa A, Okuda T, Aoyagi Y, Kinoshita T, Hasegawa S
129 - 133	Theoretical investigation on the electronic states localized at grain boundaries in semiconductors Uchida K, Tsuneyuki S
134 - 138	Surface structure evolution during Sb adsorption on Si(111)-In(4 x 1) reconstruction Gruznev DV, Rao BV, Tambo T, Tatsuyama C
139 - 143	Influence of interface structures on Sn thin film growth on Si(111) surface Ryu JT, Fujino T, Katayama M, Kim YB, Oura K
144 - 150	Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation Nagase A, Horiguchi S, Fujiwara A, Ono Y, Yamazaki K, Namatsu H, Takahashi Y
151 - 156	Structural, chemical and optical features of nanocrystalline Si films prepared by PECVD techniques Park MB, Cho NH
157 - 160	STM and LEED observations of erbium silicide nanostructures grown on Si(100) surface: atomic-scale understandings Cai Q, Yang JS, Fu Y, Wang YY, Wang XD
161 - 165	Nanoparticle-induced multi-functionalization of silicon: A plug and play approach Prabhakaran K, Shafi KVPM, Yamauchi Y, Tsubaki K, Ulman A, Homma Y, Ogino T
166 - 170	The influence of graded interfaces in the electronic spectrum of nanometer silicon dots de Sousa JS, Caetano EWS, Goncalves JR, Farias GA, Freire VN, da Silva EF
171 - 175	Nanostructural and photoluminescence features of nanoporous silicon prepared by anodic etching Lee JS, Cho NH
176 - 183	III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks Kasai S, Hasegawa H
184 - 190	Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications Motohisa J, Nakajima F, Fukui T
191 - 194	Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wells Ferreira EC, da Costa JAP, Freire JAK, Farias GA, Freire VN
195 - 199	Acoustic phonons localized at an interface between superlattice and liquid Mizuno S
200 - 204	Anomalous delay of phonons reflected from the surface of a superlattice Mizuno S, Tamura S
205 - 211	Photoluminescence of charged magneto-excitons in InAs single quantum dots Natori A, Ohnuma S, Quang NH
212 - 217	Size-shrinkage effect of InAs quantum dots during a GaAs capping growth Yamaguchi K, Saito Y, Ohtsubo R
218 - 221	Annealing effect on InAs islands on GaAs(001) substrates studied by scanning tunneling microscopy Suekane O, Hasegawa S, Tanaka M, Okui T, Nakasima H
222 - 225	Current instabilities in GaAs/InAs self-aggregated quantum dot structures Horvath ZJ, Frigeri P, Franchi S, Van Tuyen V, Gombia E, Mosca R, Dozsa L
226 - 230	Molecular beam epitaxy growth and characterization of self-assembled InAs quantum dots on (100) InAlAs/InP substrates Koo BH, Park YG, Makino H, Chang JH, Hanada T, Shindo D, Yao T
231 - 235	Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy Ito A, Muranaka T, Jiang C, Hasegawa H
236 - 241	Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE Takeda J, Akabori M, Motohisa J, Fukui T
242 - 246	Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures Yumoto M, Kasai S, Hasegawa H
247 - 251	Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wells Maia FF, Freire JAK, Farias GA, Freire VN, da Silva EF
252 - 257	Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes Wernersson LE, Gustafson B, Gustafsson A, Borgstrom M, Pietzonka I, Sass T, Seifert W, Samuelson L
258 - 263	Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy Bruls DM, Koenraad PM, Hopkinson M, Wolter JH, Salemink HWM
264 - 268	GaAs(001) surface reconstructions: geometries, chemical bonding and optical properties Schmidt WG, Bechstedt F, Bernholc J
269 - 274	Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4 x 4) surfaces Negoro N, Kasai S, Hasegawa H
275 - 278	Diffusion process of electrons injected from STM tip into AlGaAs/GaAs quantum wells Tsuruoka T, Ohizumi Y, Tanimoto R, Arafune R, Ushioda S
279 - 283	Decomposition mechanism of triethylindium (TEI) on a GaP(001)-(2 x 1) surface studied by LEED, AES, TPD and HREELS Fukuda Y, Kobayashi T, Yoshida H, Sekizawa T, Sanada N
284 - 287	An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers Teng KS, Brown M, Kestle A, Smowton P, Blood P, Pinches S, Mawby PA, Wilks SP
288 - 293	A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes Ohki S, Funato H, Suhara M, Okumura T, Wernersson LE, Seifert W
294 - 297	Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1-xAs/GaAs heterojunction Nemcsics A
298 - 301	Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer Fu ZW, Kasai S, Hasegawa H
302 - 306	Acceptor- and donor-like interfacial states at ZnSe/GaAs heterovalent interfaces Lu F, Zhu ZQ, Kimura K, Yao T
307 - 310	Reflectance difference spectroscopy during CdTe/ZnTe interface formation Balderas-Navarro RE, Hingerl K, Stifter D, Bonanni A, Sitter H
311 - 317	Surface and interface electronic properties of group III-nitride heterostructures Rizzi A
318 - 321	ICTS measurements for p-GaN Schottky contacts Shiojima K, Sugitani S, Sakai S
322 - 325	Mechanism of current leakage through metal/n-GaN interfaces Oyama S, Hashizume T, Hasegawa H
326 - 329	Characterization of metal/GaN Schottky interfaces based on I-V-T characteristics Sawada T, Ito Y, Kimura N, Imai K, Suzuki K, Sakai S
330 - 338	Localized exciton dynamics in InGaN quantum well structures Chichibu SF, Azuhata T, Okumura H, Tackeuchi A, Sota T, Mukai T
339 - 342	Low-temperature activation of mg-doped GaN with thin Co and Pt films Waki I, Fujioka H, Oshima M, Miki H, Okuyama M
343 - 347	Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer Anantathanasarn S, Hasegawa H
348 - 351	Electrical characteristics of Mg-doped GaN activated with Ni catalysts Kamii Y, Waki I, Fujioka H, Oshima M, Miki H, Okuyama M
352 - 355	Characterization of hetero-interfaces between group III nitrides formed by PLD and various substrates Ohta J, Fujioka H, Takahashi H, Oshima M
356 - 360	Photoemission study of samarium on GaN (0001) and CdTe(100) Guziewicz E, Orlowski BA, Kowalski BJ, Grzegory I, Porowski S
361 - 365	Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride Jin Z, Hashizume T, Hasegawa H
366 - 370	Soft X-ray emission study of thermally treated Ni(film)/4H-SiC(substrate) interface Ohi A, Labis J, Morikawa Y, Fujiki T, Hirai M, Kusaka A, Iwami M
371 - 375	Surface-enhanced Raman scattering study of silver deposition on thin Alq(3) layers Salvan G, Sakurai Y, Kobitski AY, Scholz R, Astilean S, Kampen TU, Zahn DRT, Ishii H, Seki K
376 - 381	Interaction of metals with an organic semiconductor: Ag and In on PTCDA Park S, Kampen TU, Kachel T, Bressler P, Braun W, Zahn DRT
382 - 385	Vibration spectroscopic study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq(3)) with potassium Sakurai Y, Salvan G, Hosoi Y, Ishii H, Ouchi Y, Seki K, Kampen TU, Zahn DRT
386 - 389	Raman spectroscopy of the PTCDA-inorganic semiconductor interface: evidence for charge transfer Kobitski AY, Salvan G, Scholz R, Tenne D, Kampen TU, Wagner HP, Zahn DRT
390 - 394	Fabrication of high quality silicon-polyaniline heterojunctions Laranjeira JMG, Khoury HJ, de Azevedo WM, da Silva EF, de Vasconcelos EA
395 - 402	Spin injection into semiconductors using dilute magnetic semiconductors Gould C, Schmidt G, Richter G, Fiederling R, Grabs P, Molenkamp LW
403 - 407	Electrical peculiarities in Al/Si/Ge/... /Ge/Si and Al/SiGe/Si structures Horvath ZJ, Jarrendahl K, Adam M, Szabo I, Van Tuyen V, Czigany Z
408 - 415	X-ray diffraction characterization of MBE grown Pr1-xSrxMnO3 thin films on NGO(110) Liu G, Wang H, Makino H, Ko HJ, Hanada T, Yao T
416 - 421	Phase transition and dielectric characteristics of nano-grained BaTiO3 ceramics synthesized from surface-coated nano-powders Park MB, Kim CD, Lee SK, Cho NH
422 - 427	Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(001) Koch R, Wedler G, Wassermann B
428 - 436	Surface/interface issues in THz electronics Hartnagel HL, Ichizli V, Rodriguez-Girones M
437 - 440	Solid-phase epitaxy of CaSi2 on Si(111) and the Schottky-barrier height of CaSi2/Si(111) Wurz R, Schmidt M, Schopke A, Fuhs W
441 - 444	Modification of Al/Si interface and Schottky barrier height with chemical treatment Horvath ZJ, Adam M, Szabo I, Serenyi M, Van Tuyen V
445 - 449	Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers Maeda K
450 - 454	High performance of thin nano-crystalline ZrN diffusion barriers in Cu/Si contact systems Takeyama MB, Itoi T, Aoyagi E, Noya A
455 - 460	Morphology and interfacial properties of microrelief metal-semiconductor interface Dmitruk NL, Borkovskaya OY, Dmitruk IN, Mamykin SV, Horvath ZJ, Mamontova IB
461 - 466	Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer Kampen TU, Park S, Zahn DRT
467 - 474	The passivation of atomic scale defects present on III-V semiconductor laser facets: an STM/STS investigation Wilks SP, Teng KS, Dunstan PR, Williams RH
475 - 479	Metallization and Schottky-barrier formation for Se-passivated GaAs(100) interfaces Biel B, Benito I, Gonzalez C, Blanco JM, Ortega J, Perez R, Flores F
480 - 484	Molecular-beam epitaxy on shallow mesa gratings patterned on GaAs(311)A and (100) substrates Gong Q, Notzel R, Schonherr HP, Ploog KH
485 - 490	Highly stable passivation of a Si(111) surface using bilayer-GaSe Ueno K, Shirota H, Kawamura T, Shimada T, Saiki K, Koma A
491 - 497	Control of polarity of heteroepitaxial ZnO films by interface engineering Hong SK, Hanada T, Chen YF, Ko HJ, Yao T, Imai D, Araki K, Shinohara M
498 - 507	Low-energy electron-excited nanoluminescence studies of GaN and related materials Brillson LJ, Bradley ST, Goss SH, Sun X, Murphy MJ, Schaff WJ, Eastman LF, Look DC, Molnar RJ, Ponce FA, Ikeo N, Sakai Y
508 - 512	Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces Ishikawa F, Hasegawa H
513 - 516	Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study Achermann M, Siegner U, Wernersson LE, Keller U
517 - 520	Monte Carlo simulation for temperature dependence of Ga diffusion length on GaAs(001) Kangawa Y, Ito T, Taguchi A, Shiraishi K, Irisawa T, Ohachi T
521 - 526	Surface and interface of Ti(film)/SiC (substrate) system: a soft X-ray emission and photoemission electron microscopy study Labis J, Ohi A, Kamezawa C, Yoshida K, Hirai M, Kusaka M, Iwami M