Applied Surface Science

Applied Surface Science, Vol.254, No.12 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (18 articles)

3613 - 3614	Special issue on solid state surfaces and interfaces - Preface Bezak V, Gasparik V, Takahashi M
3615 - 3625	Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application Angermann H, Rappich J, Korte L, Sieber I, Conrad E, Schmidt M, Hubener K, Polte J, Hauschild J
3626 - 3629	Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals Basa P, Alagoz AS, Lohner T, Kulakci M, Turan R, Nagy K, Horvath ZJ
3630 - 3634	Tunnelling through randomly inhomogeneous barriers as a special problem of the scattering theory Bezak V
3635 - 3637	Preparation and structural properties of MgO films grown on GaAs substrate Chromik S, Spankova M, Vavra I, Liday J, Vogrincic P, Lobotka P
3638 - 3642	Hg-based cuprate superconducting films patterned into structures for ultrafast photodetectors Chromik S, Valerianova M, Strbik V, Gazi S, Odier P, Li X, Xu Y, Sobolewski R, Hanic F, Plesch G, Benacka S
3643 - 3647	Structural and optical properties of sputtered ZnO thin films Flickyngerova S, Shtereva K, Stenova V, Hasko D, Novotny I, Tvarozek V, Sutta P, Vavrinsky E
3648 - 3652	Study and applications of plasma-modified Si and porous Si surfaces Gabouze N, Benzekkour N, Mahmoudi B, Belhousse S, Cheraga H, Ghellai N
3653 - 3666	Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications Hasegawa H, Akazawa M
3667 - 3671	Nitric acid oxidation method to form SiO2/3C-SiC structure at 120 degrees C Im SS, Terakawa S, Iwasa H, Kobayashi H
3672 - 3676	Solution of the optical parameters of the thin film systems and interfaces Jurecka S, Pincik E, Brunner R
3677 - 3680	Optical inhomogeneity model for evaporated Y2O3 obtained from physical thickness measurement Kasikov A
3681 - 3684	Near-field scanning optical microscopy studies of thin film surfaces and interfaces Klapetek P, Bursik J
3685 - 3689	Nitric acid method for fabrication of gate oxides in TFT Mizushima S, Imai S, Asuha, Tanaka M, Kobayashi H
3690 - 3695	Microstructure of hydrogenated silicon thin films prepared from silane diluted with hydrogen Mullerova J, Sutta P, van Elzakker G, Zeman M, Mikula M
3696 - 3709	In situ measurement of plasma charging on SiO2 hole bottoms and reduction by negative charge injection during etching Ohmori T, Makabe T
3710 - 3714	Photoluminescence of very thin oxide/a-Si : H structures passivated in HCN solutions Pincik E, Brunner R, Kobayashi H, Takahashi M, Kucera M
3715 - 3720	Si cleaning method without surface morphology change by cyanide solutions Takahashi M, Liu YL, Narita H, Kobayashi H