5591 - 5591 |
International conference: Progress in Applied Surface, Interface, and Thin Film Science - Solar Renewable Energy News II (SURFINT - SREN II), Florence, November 15-20, 2009, Italy Preface Pincik E |
5592 - 5595 |
Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching Boukezzata A, Keffous A, Cheriet A, Belkacem Y, Gabouze N, Manseri A, Nezzal G, Kechouane M, Bright A, Guerbous L, Menari H |
5596 - 5601 |
On photoluminescence properties of a-Si:H-based structures Brunner R, Pincik E, Kobayashi H, Kucera M, Takahashi M, Rusnak J |
5602 - 5605 |
Fabrication of diamond nanorods for gas sensing applications Davydova M, Kromka A, Rezek B, Babchenko O, Stuchlik M, Hruska K |
5606 - 5609 |
Surface modification of doped ZnO thin films Flickyngerova S, Skriniarova J, Netrvalova M, Kovac J, Novotny I, Suttab P, Tvarozeka V |
5610 - 5613 |
Low temperature fabrication of 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method Fukaya Y, Yanase T, Kubota Y, Imai S, Matsumoto T, Kobayashi H |
5614 - 5617 |
Electrical behaviour of lateral Al/n-GaN/Al structures Horvath ZJ, Dobos L, Beaumont B, Bougrioua Z, Pecza B |
5618 - 5622 |
Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate Chromik S, Gierlowski P, Spankova M, Dobrocka E, Vavra I, Strbik V, Lalinsky T, Sojkova M, Liday J, Vogrincic P, Espinos JP |
5623 - 5628 |
On the influence of the surface roughness onto the ultrathin SiO2/Si structure properties Jurecka S, Kobayashi H, Takahashi M, Matsumoto T, Jureckova M, Chovanec F, Pincik E |
5629 - 5639 |
Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications Keffous A, Gabouze N, Cheriet A, Belkacem Y, Boukezzata A |
5640 - 5643 |
Rough surface scattering simulations using graphics cards Klapetek P, Valtr M, Poruba A, Necas D, Ohlidal M |
5644 - 5649 |
Wet sulfur passivation of GaSb(100) surface for optoelectronic applications Kunitsyna EV, L'vova TV, Dunaevskii MS, Terent'ev YV, Semenov AN, Solov'ev VA, Meltser BY, Ivanov SV, Yakovlev YP |
5650 - 5655 |
Study of structural and optical properties of ZnO films grown by pulsed laser deposition Lemlikchi S, Abdelli-Messaci S, Lafane S, Kerdja T, Guittoum A, Saad M |
5656 - 5658 |
The roughness surface expressed by the mathematical model Macurova A |
5659 - 5661 |
Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy Hernandez-Maldonado D, Herrera M, Sales DL, Alonso-Gonzalez P, Gonzalez Y, Gonzalez L, Pizarro J, Galindo PL, Molina SI |
5662 - 5666 |
Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells Mikolasek M, Racko J, Harmatha L, Gaspierik P, Sutta P |
5667 - 5671 |
A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness Mullerova J, Prusakova L, Netrvalov M, Vavrunkova V, Sutta P |
5672 - 5675 |
Dependence of Curie temperature on surface strain in InMnAs epitaxial structures Novak J, Vavra I, Krizanova Z, Hasenohrl S, Soltys J, Reiffers M, Strichovanec P |
5676 - 5680 |
Active oxidation of Cu3Au(110) using hyperthermal O-2 molecular beam Okada M, Teraoka Y |
5681 - 5683 |
Composition modulation analysis of InxGa1-xP layers grown on (001) germanium substrates Pastore CE, Araujo D, Gutierrez M, Miguel-Sanchez J, Rodriguez-Messmer E |
5684 - 5687 |
Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions Plecenik A, Tomasek M, Plecenik T, Truchly M, Noskovic J, Zahoran M, Roch T, Belogolovskii M, Spankova M, Chromik S, Kus P |
5688 - 5690 |
Effect of annealing on the structural and optical properties of (311)B GaAsBi layers Rodrigo JF, Sales DL, Shafi M, Henini M, Turyanska L, Novikov S, Molina SI |
5691 - 5694 |
Formation and properties of high density Si nanodots Xu J, Chen GR, Song C, Chen KJ, Huang XF, Ma ZY |