Applied Surface Science

Applied Surface Science, Vol.255, No.3 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (57 articles)

623 - 623	11th International Conference on the Formation of Semiconductor Interfaces (ICFSI-11) Foreword da Silva EF, da Azevedo WM
624 - 627	Low dimensional silicon structures for photonic and sensor applications Adamo R, Anopchenko A, Bettotti P, Cazzanelli M, D'Amato E, Daldosso N, Ferraioli L, Froner E, Gaburro Z, Guider R, Hossain SM, Navarro-Urrios D, Pitanti A, Prezioso S, Scarpa M, Spano R, Wang M, Pavesi L
628 - 632	Surface passivation technology for III-V semiconductor nanoelectronics Hasegawa H, Akazawa M
633 - 636	One and two mode behaviors of surface phonon-polaritons of ternary mixed crystal films Bao J, Liang XX
637 - 639	Electron-phonon interaction effects on the surface states in wurtzite nitride semiconductors Yan ZW, Li GX
640 - 642	Analysis of interface layers by spectroscopic ellipsometry Kim TJ, Yoon JJ, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ
643 - 645	Monitoring the non-radiative relaxation time of PpIX solution with Au nanoparticles using Photoacoustic Spectroscopy Jimenez-Perez JL, Cruz-Orea A, Alvarado EM, Ramirez JFS, Ramon-Gallegos E, Mendoza-Alvarez JG
646 - 648	A monolithically integrated CMOS labchip using sensor devices Schafer H, Scholer L, Seibel K, Bohm M
649 - 652	Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques Ackland MP, Dunstan PR, Brown MR, Teng KS, Wilks SP, Cobley R
653 - 655	Polarization catastrophe in nanostructures doped in photonic band gap materials Singh MR
656 - 658	Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance Ahn E, Park K, Kim B, Kim YD, Yoon E
659 - 661	Metal-semiconductor interface in extreme temperature conditions Bulat LP, Erofeeva IA, Vorobiev YV, Gonzalez-Hernandez J
662 - 664	Characterization of surface states by SPV-transient Sinkkonen J, Novikov S, Varpula A
665 - 668	Calculation of electronic spectra of semiconductor nanostructures using the "mirror'' boundary conditions Vorobiev YV, Horley PP, Gorley PN, Vieira VR, Louvier-Hernandez JF, Luna-Barcenas G, Gonzalez-Hernandez J
669 - 671	Characterization of semiconductor nanostructures formed by using ultrathin Si oxide technology Ichikawa M, Uchida S, Shklyaev AA, Nakamura Y, Cho SP, Tanaka N
672 - 675	Electrical characterization of high-k gate dielectrics on semiconductors Ma TP
676 - 678	Proton radiation effects in quantum dot lasers Gonda S, Tsutsumi H, Ishigami R, Kume K, Ito Y, Ishida M, Arakawa Y
679 - 681	Dissociation of water molecule at three-fold oxygen coordinated V site on the InVO4 (001) surface Oshikiri M, Boero M, Matsushita A, Ye J
682 - 684	RHEED intensity oscillation of C-60 growth on GaAs substrates Nishinaga J, Kawaharazuka A, Horikoshi Y
685 - 687	The effect of lanthanide impurities on the physical properties of half-metallic ferromagnet Co2MnSi Tetean R, Chioncel L, Burzo E, Bucur N, Bezergheanu A, Deac IG
688 - 690	A conducting polymer-silicon heterojunction as a new ultraviolet photodetector Cardenas JR, de Vasconcelos EA, de Azevedo WM, da Silva EF, Pepe I, da Silva AF, Ribeiro SS, Silva KA
691 - 693	Colloidal semiconductor quantum dots: Potential tools for new diagnostic methods Farias PMA, Santos BS, Fontes A, Vieira AAS, Silva DCN, Castro-Neto AG, Chaves CR, Da Cunha AHGB, Scordo D, Amaral JCOF, Moura-Neto V
694 - 697	Vacuum ultraviolet ellipsometry investigation of ultrathin organic films and their heterostructures Sindu J, Rudra S, Lehmann D, Friedrich M, Zahn DRT
698 - 700	Thermal lens investigation in amorphous SiN Anjos V, Andrade AA, Bell MJV
701 - 702	Enhancement of the thermal transport in a culture medium with Au nanoparticles Jimenez-Perez JL, Fuentes RG, Alvarado EM, Ramon-Gallegos E, Cruz-Orea A, Tanori-Cordova J, Mendoza-Alvarez JG
703 - 705	Assessment of electronic properties of InNxSb1-x for long-wavelength infrared detector applications Bhusal L, Freundlich A
706 - 708	Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics Palmieri R, Boudinov H, Radtke C, da Silva EF
709 - 711	The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor Rodrigues SCP, Araujo YRV, Sipahi GM, Scolfaro LMR, da Silva EF
712 - 714	AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors Lalinsky T, Rufer L, Vanko G, Mir S, Hascik S, Mozolova Z, Vincze A, Uherek F
715 - 717	Interconnection effects on the performance of basic subcircuits with single-electron tunneling devices Carneiro VGA, Guimaraes JG, da Costa JC
718 - 721	Metal ion induced room temperature phase transformation and stimulated infrared spectroscopy on TiO2-based surfaces Gole JL, Prokes SM, White MG
722 - 724	Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4 x 2)/c(8 x 2) surface Seidel U, Sagol BE, Pettenkofer C, Hannappel T
725 - 727	Characterization of semiconductor core-shell nanoparticles by resonant Raman scattering and photoluminescence spectroscopy Dzhagan VM, Valakh MY, Raevskaya AE, Stroyuk AL, Kuchmiy SY, Zahn DRT
728 - 730	Application of core-shell PEGylated CdS/Cd(OH)(2) quantum dots as biolabels of Trypanosoma cruzi parasites Chaves CR, Fontes A, Farias PMA, Santos BS, de Menezes FD, Ferreira RC, Cesar CL, Galembeck A, Figueiredo RCBQ
731 - 733	Periodic Mg distribution in GaN:delta-Mg and the effect of annealing on structural and optical properties Wegscheider M, Simbrunner C, Li T, Jakiela R, Navarro-Quezada A, Quast M, Sitter H, Bonanni A
734 - 736	KDP/PEDOT: PSS mixture as a new alternative in the fabrication of pressure sensing devices Silva FAR, Silva LM, Ceschin AM, Sales MJA, Moreira SGC, Viana CE
737 - 739	Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As-2 and As-4 arsenic sources Kawaharazuka A, Yoshiba I, Horikoshi Y
740 - 742	Formation of CdS nanoparticles using starch as capping agent Rodriguez P, Munoz-Aguirre N, Martinez ESM, Gonzalez G, Zelaya O, Mendoza J
743 - 745	Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currents Horvath ZJ
746 - 748	Application of spectral reflectance to the monitoring of ZnO nanorod growth Ghong TH, Kim YD, Ahn E, Yoon E, An SJ, Yi GC
749 - 751	Effect of gas residence time on the morphology of silicon surface etched in SF6 plasmas Pessoa RS, Maciel HS, Petraconi G, Massi M, Sobrinho ASD
752 - 754	Electronic, vibrational and related properties of group IV metal oxides by ab initio calculations Alves HWL, Silva CC, Lino AT, Borges PD, Scolfaro LMR, da Silva EF
755 - 757	A simplified reactive thermal evaporation method for indium tin oxide electrodes Belo GS, da Silva BJP, de Vasconcelos EA, de Azevedo WM, da Silva EF
758 - 760	Praseodymium silicide formation at the Pr2O3/Si interface Watahiki T, Tinkham BP, Jenichen B, Shayduk R, Braun W, Ploog KH
761 - 763	Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications Gomez-Herrera ML, Herrera-Perez JL, Rodriguez-Fragoso P, Riech I, Mendoza-Alvarez JG
764 - 766	The local electronic structure of tin phthalocyanine studied by resonant soft X-ray emission spectroscopies Peltekis N, Holland BN, Piper LFJ, DeMasi A, Smith KE, Downes JE, McGovern IT, McGuinness C
767 - 769	Optical properties of ZnTe layers formed over surface-modified ZnSe substrates Makhniy VP, Mel'nyk VV, Slyotov MM, Gorley PN, Horley PP, Vorobiev YV, Gonzalez-Hernandez J
770 - 774	Preparation and characterization of conducting polymer/silver hexacyanoferrate nanocomposite de Azevedo WM, de Mattos IL, Navarro M, da Silva EF
775 - 777	Arrangement of metal phthalocyanines on Ge (001) 2 x 1 surfaces Holland BN, Cabailh G, Peltekis N, McGuinness C, Cafolla AA, McGovern IT
778 - 780	Tuning strain relaxation by surface morphology: Surfactant-mediated epitaxy of germanium on silicon Wietler TF, Bugiel E, Hofmann KR
781 - 783	Study of thermal diffusivity of nanofluids with bimetallic nanoparticles with Au(core)/Ag(shell) structure Fuentes RG, Rojas JAP, Jimenez-Perez JL, Ramirez JFS, Cruz-Orea A, Mendoza-Alvarez JG
784 - 786	Improvement of interface properties of AlGaN/GaN heterostructures under gamma-radiation Vitusevich SA, Kurakin AM, Konakova RV, Belyaev AE, Klein N
787 - 789	Ab initio calculation of optical absorption and reflectivity of Si(001)/SiO2 superlattices with varying interfaces Seino K, Wagner JM, Bechstedt F
790 - 792	New highly fluorescent biolabels based on II-VI semiconductor hybrid organic-inorganic nanostructures for bioimaging Santos BS, Farias PMA, Menezes FD, Brasil AG, Fontes A, Romao L, Amaral JO, Moura-Neto V, Tenorio DPLA, Cesar CL, Barbosa LC, Ferreira R
793 - 795	Numerical analysis of gate leakage current in AlGaN Schottky diodes Osvald J
796 - 798	Semiconductor nanocrystals obtained by colloidal chemistry for biological applications Santos BS, Farias PMA, Fontes A, Brasil AG, Jovino CN, Neto AGC, Silva DCN, de Menezes FD, Ferreira R
799 - 801	Onion like growth and inverted many-particle energies in quantum dots Bimberg D