Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.11 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (51 articles)

L3 - L3	Room-temperature ionic liquids with high conductivities and wide electrochemical windows - N-alkyl-N-methylpyrrolidinium and N-alkyl-N-methylpiperidinium fluorohydrogenates (vol 7, pg E41, 2004) Matsumoto K, Hagiwara R, Ito Y
B35 - B38	Comparison of the effects of implanted and aqueous Cl on aluminum pitting behavior Wall FD, Johnson CM, Barbour JC, Martinez MA
B39 - B41	Protective properties of organic coatings on plasma-treated cold rolled aluminum Monetta T, Mitton DB, Bellucci F
B42 - B44	Deposition of high dielectric barium-doped titanium silicon oxide films on silicon using hexafluorotitanic acid and barium nitrate Lee MK, Tung KW, Yu CM
D19 - D21	Synthesis of DLC films by electrolysis of dimethyl sulfoxide Jiang HQ, Huang LN, Wang SJ, Zhang ZJ, Xu T, Liu WM
D22 - D24	Electrodeposited biaxially textured Ni layer for YBCO superconductor oxide films Bhattacharya R, Chen J, Spagnol P, Chaudhuri T
E45 - E47	Rectified ion currents through ultrathin polyelectrolyte complex: Toward chemical transistors Salloum DS, Schlenoff JB
E48 - E50	Conductive property of multiwall carbon nanotubes-PEO-salt nanocomposite film Zhao F, Wang MK, Dong SJ
E51 - E53	Fabrication and electrochemical behavior of nanodisk electrode arrays with controlled interval using ideally ordered porous alumina Matsumoto F, Harada M, Koura N, Nishio K, Masuda H
F67 - F69	Pt nanocrystalline interfacial layer in an SBT/Pt/Ti ferroelectric capacitor Leu CC, Chien CH, Hsu CC, Leu CF, Hsu FY, Hu CT
F70 - F72	SrTiO3 thin films deposited by CLCB in combination with sol-gel processing Kang H, Park S, Kim K, Sung MY, Choi H
F73 - F76	Characteristics of TiO2 films prepared by ALD with and without plasma Lim JW, Yun SJ, Lee JH
H49 - H51	Uniform void-free epitaxial CoSi2 formation on STI bounded narrow Si(100) lines by template layer stress reduction Ho CS, Pey KL, Tung CH, Zhang BC, Tee KC, Karunasiri G, Chua SJ
H52 - H54	Anomalous increase of grain size in Ni-mediated crystallization of amorphous silicon Oh JH, Choi JH, Kim KH, Cheon JH, Jang J
A385 - A388	Performance of a pore-filling electrolyte membrane in hydrogen-oxygen PEFC Nishimura H, Yamaguchi T
A389 - A390	Performance of microtubular DMFCs Kunimatsu M, Okada T
A391 - A393	Single chamber electrolyte supported SOFC module Suzuki T, Jasinski P, Anderson HU, Dogan F
A394 - A396	Surface-modified nanopore glass membrane as electrolyte for DMFCs Ioroi T, Kuraoka K, Yasuda K, Yazawa T, Miyazaki Y
A397 - A399	The use of carbon nanofiber electrodes prepared by electrospinning for electrochemical supercapacitors Kim C, Yang KS, Lee WJ
A400 - A403	Hydrothermal synthesis of V2O5 center dot 1.9H(2)O single crystals with novel electrochemical characteristics Hu CC, Chang KH
A404 - A407	Nanostructured conducting polyaniline tubules as catalyst support for Pt particles for possible fuel cell applications Rajesh B, Thampi KR, Bonard JM, Mathieu HJ, Xanthopoulos N, Viswanathan B
A408 - A411	Visualization of liquid water transport in a PEFC Yang XG, Zhang FY, Lubawy AL, Wang CY
A412 - A415	New generation of ordered polymer electrolytes for lithium batteries Golodnitsky D, Livshits E, Kovarsky R, Peled E, Chung SH, Suarez S, Greenbaum SG
A416 - A420	Synthesis of a polyanion cathode material, Li2Co2(MoO4)(3), and its electrochemical properties for lithium batteries Prabaharan SRS, Michael MS, Begam KM
A421 - A424	Electrochemical transformation of SWNT/Nafion composites Liu P, Lee SH, Yan YF, Gennett T, Landi BJ, Dillon AC, Heben MJ
A425 - A428	Polyaniline-MnO2 composite electrode for high energy density electrochemical capacitor Prasad KR, Miura N
A429 - A431	A fabrication method for MEAs for PEFCs using Nafion precursor Saha MS, Kimoto K, Nishiki Y, Furuta T
A432 - A434	Improved Li-battery electrolytes by heterogeneous doping of nonaqueous Li-salt solutions Bhattacharyya AJ, Dolle M, Maier J
A435 - A438	C-MEMS for the manufacture of 3D microbatteries Wang CL, Taherabadi L, Jia GY, Madou M, Yeh YT, Dunn B
A439 - A441	A low-cobalt AB(5)-type hydrogen storage alloy stabilized by an inert second phase for use in low-cost, high-performance NiMH cells Hu WK, Gao XP, Geng MM, Noreus D
A442 - A446	Effect of morphology and current density on the electrochemical behavior of graphite electrodes in PC-based electrolyte containing VEC additive Hu YS, Kong WH, Wang ZX, Li H, Huang XJ, Chen LQ
A447 - A450	Conductivity and capacitance properties of a supercapacitor based on Nafion electrolyte in a nonaqueous system Lufrano F, Staiti P
A451 - A454	Mo6+-doped Li[Ni(0.5+x)Mn(1.5-2x)Mox]O-4 spinel materials for 5 V lithium secondary batteries prepared by ultrasonic spray pyrolysis Park SH, Oh SW, Myung ST, Sun YK
C129 - C132	Highly selective etching of GaAs on Al0.2Ga0.8As using citric acid/H2O2/H2O etching system Liao CI, Houng MP, Wang YH
C133 - C135	Formation of complex tungsten-silica microstructures by Ar+ laser processing Toth Z, Piglmayer K
G241 - G243	Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N2O plasma treatment Kim HM, Huh C, Kim SW, Park NM, Park SJ
G244 - G246	RBS characterization of porous silicon multilayer interference filters Torres-Costa V, Paszti F, Climent-Font A, Martin-Palma RJ, Martinez-Duart JM
G247 - G250	Interface modification for OTFTs using a statistical optimization method Hong WS, Koo B, Kang I
G251 - G253	A novel distributed charge storage element fabricated by the oxidation of amorphous silicon carbide Chang TC, Yan ST, Chen YT, Liu PT, Sze SM
G254 - G257	Improvements in reliability and leakage current properties of HfO2 gate dielectric films by in situ O-3 oxidation of Si substrate Park HB, Cho M, Park J, Lee SW, Park TJ, Hwang CS
G258 - G260	Effect of Ni thickness dependence on NiSiFUSI metal gate characteristics Wen HC, Sim JH, Lu JP, Kwong DL
G261 - G263	Fabrication and characterization of reactively sputtered TaN thin-film resistors for millimeter wave applications Mellberg A, Nicols SP, Rorsman N, Zirath H
G264 - G265	Delineating structural defects in highly doped n-type 4H-SiC substrates using a combination of thermal diffusion and molten KOH etching Zhang ZH, Gao Y, Sudarshan T
G266 - G268	Effects of temperature on InGaN/GaN LEDs with different MQW structures Huh C, Park SJ
G269 - G271	Sulfur-doped indium phosphide on silicon substrate brown by ELOG Sun YT, Lourdudoss S, Avella M, Jimenez J
G272 - G275	Nanostructured TaN(O)/TaN barrier film formed by oxygen plasma treatment for copper interconnect Ou KL, Lin MH, Chiou SY
G276 - G278	Electrical investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD Fujinaga K
G279 - G281	Mobility enhancement in ZnO-based TFTs by H treatment Bae HS, Kim JH, Im S
G282 - G285	Detection of kite-shaped COPs in nitrogen-doped Czochralski-grown silicon wafers Lee WP, Yow HK, Tou TY
G286 - G289	Selective sidewall airgap integration for deep submicrometer interconnects de Mussy JPG, Richard O, Beyer G, Maex K
G290 - G293	Negative differential resistance of 2D electron gases in 0.1 mu m pseudomorphic HEMTs Kim SD, Oh JH, Han HJ, Lim BO, Rhee JK, Sul WS