원거리 플라즈마 ALD법으로 증착한 ZrN박막의 특성 연구

조승찬; 황윤철; 이근우; 한세진; 김인배; 전형탁; 김양도; Seung Chan Cho; Yoon Cheol Hwang; Keun Woo Lee; Se Jin Han; In Bae Kim; Hyeongtag Jeon; Yangdo Kim

Korean Journal of Materials Research, Vol.15, No.9, 594-597, September, 2005

DOI10.3740/MRSK.2005.15.9.594 Export Citation

원거리 플라즈마 ALD법으로 증착한 ZrN박막의 특성 연구

Characteristics of ZrN Films Deposited by Remote PEALD Method Using TDEAZ Precursor

조승찬, 황윤철, 이근우¹, 한세진¹, 김인배, 전형탁¹, 김양도 ^†

부산대학교 재료공학부
¹한양대학교 신소재공학부

Seung Chan Cho, Yoon Cheol Hwang, Keun Woo Lee¹, Se Jin Han¹, In Bae Kim, Hyeongtag Jeon¹, and Yangdo Kim^†

School of Materials Science and Engineering, Pusan National University, Busan, 609-735, Korea
¹Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea

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The barrier characteristics of ZrN films deposited by remote plasma enhanced atomic layer deposition(PEALD) using TDEAZ and [Math Processing Error] remote plasma have been investigated under various deposition conditions such as temperatures, plasma power and processing pressures. ZrN films showed generally improved properties as the processing temperature, pressure and plasma power increased. The optimized processing temperature, plasma power and pressure were [Math Processing Error] , 200 Watt and 1 torr. respectively ZrN films deposited at the optimized processing conditions showed the carbon contents and resistivity of [Math Processing Error] and [Math Processing Error] respectively.

Keywords:remote PEALD;ZrN films;diffusion barrier

[References]

Grove AS, Physics and technology of semiconductor devices, p. 40, Wiley, New York (1967) (1967)
McBrayer JD, Diffusion of metals in silicon dioxide, DARPA, MDA 901-82-k-0412 (1983) (1983)
Raaijmakers IJ, Shennan A, VMIC conference, 219 (1990)
Semiconductor Technology Handbook, 5th edition, Technology Associates, CA (1985) (1985)
Uekubo M, Oku T, Nii K, Murakami M, Takahiro K, Yamaguchi S, Nakano T, Ohta T, Thin Solid Films, 286(1-2), 170 (1996)
Oku T, Kawakami E, Uekubo M, Takahiro K, Yamaguchi S, Murakami M, Appl. Surf. Sci., 99, 265 (1996)
Tasi MH, Sun SC, Tsai CE, Chuang SH, Chiu HT, J. Appl. Phys., 79, 6932 (1996)
Ritala M, Leskela M, Rauhala E, Jokinen J, J. Electrochem. Soc., 145(8), 2914 (1998)
Schulberg MT, Allendorf MD, Outka DA, J. Vac. Sci. Technol. A, 14(6), 3228 (1996)
Boumerzong M, Pang Z, Boudreau M, Masher P, Appl. Phys. Lett., 66, 302 (1995)
Olowolafe JO, Mogab CJ, Gregort RB, Kottke M, J. Appl. Phys., 72, 4099 (1992)
Nicolet MA, Lau SS, in VLSI Electronics: Microstructure Science, edited by Einspruch N, Larrabee G (Academic, New york, 1978) (1978)
Toyama N, Solid State Electron, 26, 37 (1983)
Yokoyama N, Hinode K, Homma Y, J. Electrochem. Soc., 136, 882 (1989)
Takeyama MB, Noya A, Sakanishi K, J. Vac. Sci. Technol. B, 18(3), 1333 (2000)
Samsonov GV, Sov. Phys. Tech. Phys., 1, 695 (1967)
Kubaschewski O, Evans ELU, Alock DB, Metallurgical Thermochemistry (Pergamon, Oxford, 1967) (1967)

[Referenced By]

[Related Articles]

[1] Grove AS, Physics and technology of semiconductor devices, p. 40, Wiley, New York (1967) (1967)

[2] McBrayer JD, Diffusion of metals in silicon dioxide, DARPA, MDA 901-82-k-0412 (1983) (1983)

[3] Raaijmakers IJ, Shennan A, VMIC conference, 219 (1990)

[4] Semiconductor Technology Handbook, 5th edition, Technology Associates, CA (1985) (1985)

[5] Uekubo M, Oku T, Nii K, Murakami M, Takahiro K, Yamaguchi S, Nakano T, Ohta T, Thin Solid Films, 286(1-2), 170 (1996)

[6] Oku T, Kawakami E, Uekubo M, Takahiro K, Yamaguchi S, Murakami M, Appl. Surf. Sci., 99, 265 (1996)

[7] Tasi MH, Sun SC, Tsai CE, Chuang SH, Chiu HT, J. Appl. Phys., 79, 6932 (1996)

[8] Ritala M, Leskela M, Rauhala E, Jokinen J, J. Electrochem. Soc., 145(8), 2914 (1998)

[9] Schulberg MT, Allendorf MD, Outka DA, J. Vac. Sci. Technol. A, 14(6), 3228 (1996)

[10] Boumerzong M, Pang Z, Boudreau M, Masher P, Appl. Phys. Lett., 66, 302 (1995)

[11] Olowolafe JO, Mogab CJ, Gregort RB, Kottke M, J. Appl. Phys., 72, 4099 (1992)

[12] Nicolet MA, Lau SS, in VLSI Electronics: Microstructure Science, edited by Einspruch N, Larrabee G (Academic, New york, 1978) (1978)

[13] Toyama N, Solid State Electron, 26, 37 (1983)

[14] Yokoyama N, Hinode K, Homma Y, J. Electrochem. Soc., 136, 882 (1989)

[15] Takeyama MB, Noya A, Sakanishi K, J. Vac. Sci. Technol. B, 18(3), 1333 (2000)

[16] Samsonov GV, Sov. Phys. Tech. Phys., 1, 695 (1967)

[17] Kubaschewski O, Evans ELU, Alock DB, Metallurgical Thermochemistry (Pergamon, Oxford, 1967) (1967)