The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions win investigated. HCl was used as the etchant, and in certain cases was followed by an additional etch in Br-2-HCl-HNO3-Ch(3)COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525 degreesC, 550 degreesC, or 575 degreesC. Features observed in the in-situ reflectance associated with the oxide desorption process are interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and ex-situ atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.