| 학회 |
한국공업화학회 |
| 학술대회 |
2010년 가을 (10/27 ~ 10/29, 대전컨벤션센터) |
| 권호 |
14권 2호 |
| 발표분야 |
정보.전자소재 |
| 제목 |
Investigation on High Density Plasma Reactive Ion Etching of CoFeB Thin Films For Nonvolatile Magnetic Random Access Memory |
| 초록 |
The etching of MTJ stack which is composed of magnetic materials such as CoFeB is one of the vital processes for the realization of high-density MRAM. In this study, CoFeB magnetic films were investigated in a high-density plasma using CH4/Ar and CH4/O2/Ar gas mixes. The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate and gas pressure on etch characteristics will be systematically explored. |
| 저자 |
김은호, 소우빈, 공선미, 정지원
|
| 소속 |
인하대 |
| 키워드 |
CoFeB thin films; Magnetic tunnel junction; High density plasma reactive ion etching; CH4/Ar gas
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| E-Mail |
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