| 학회 |
한국화학공학회 |
| 학술대회 |
2005년 가을 (10/21 ~ 10/22, 인하대학교) |
| 권호 |
11권 2호, p.1781 |
| 발표분야 |
공정시스템 |
| 제목 |
Run-to-Run Control of Inductively Coupled C2F6 Plasma Etching of SiO2: Multivariable Controller Design and Numerical Application |
| 초록 |
A model-based run-to-run control method has been devised for an inductively coupled plasma (ICP) etcher and applied to a numerical process for etching SiO2 film with C2F6 plasmas. The controller was designed to regulate the oxide etch rate and etch uniformity by manipulating the RF power, chamber pressure and RF bias voltage. It was shown that the controller can steer the process to the best achievable state even when the set points are given to be physically unattainable. This performance was demonstrated through numerical simulation together with the normal set point tracking performance. |
| 저자 |
서승택1, 이광순1, 양대륙2, 최범규1
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| 소속 |
1서강대, 2고려대 |
| 키워드 |
R2R control; ICP etcher; C2F6 plasmas; SiO2 etching
|
| E-Mail |
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| 원문파일 |
초록 보기 |
