| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
37권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
A chemically amplified molecular resist containing tertiary caprolactone for EUV lithography |
| 초록 |
A novel molecular resist containing tertiary caprolactone was synthesized. The tertiary caprolactone group of the matrix bisphenol A oligomer was cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposure region after post-exposure bake. The tertiary caprolactone group was synthesized from camphor by Bayer-Villiger oxidation. This cyclic lactone group do not produce volatile byproducts, thus can be used for low-outgassing EUV resist. |
| 저자 |
정선화, 조경천, 김진백
|
| 소속 |
한국과학기술원 |
| 키워드 |
molecular resist; EUV lithography; tertiary caprolactone; bisphenol A oligomer
|
| E-Mail |
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