| 학회 |
한국화학공학회 |
| 학술대회 |
2011년 봄 (04/27 ~ 04/29, 창원컨벤션센터) |
| 권호 |
17권 1호, p.702 |
| 발표분야 |
이동현상 |
| 제목 |
Polymer Layer based Surface KineticModel on Silicon Dioxide Etch Process in Inductively Coupled Fluorocarbon Plasmas |
| 초록 |
To achieve ultra-highdeep contact hole, the fluorocarbon gases have been used with numerous additives to optimize the reactant fluxes and obtain the ideal etch profiles.As an effort to address this issue, we present a fluorocarbon plasma-surface kinetic modelingbased on the experimental plasma diagnostic datafor silicondioxide etching process underinductively coupled C4F6 plasmas.For this work, the cut-off probe and QMS were used for measuring the electron densities and the ion and neutral radical species.Furthermore, the surface analysis using XPS was performed to investigate the thickness and the chemical bonding of the formed polymer passivation layer during the etch process.Based on these experimental data, we proposed a realistic etching model using the “well-mixed” assumption to the ion mixing zone.The surface model of the fluorocarbon film region is based on a complex fluorocarbon balance for steady-state substrate etching conditions considering deposition, etching and consumption.Finally, the surface kinetic modeling results showed good agreements with experimental etch rates as functions of ion energy. |
| 저자 |
장원석1, 유동훈2, 조덕균3, 육영근3, 권득철1, 김진태3, 김상곤3, 윤정식1, 임연호3
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| 소속 |
1국가핵융합(연), 2경원테크 / 전북대, 3전북대 |
| 키워드 |
Surface Kinetic Model; Silicon Dioxide Etch; Fluorocarbon plasmas
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| E-Mail |
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| 원문파일 |
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