화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation
Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML
Materials Science Forum, 457-460, 1133, 2004
2 p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical
Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK
Materials Science Forum, 389-3, 683, 2002
3 N and p type 6H-SiC films for the creation diode and triode structure of nuclear particle detectors
Ivanov AM, Strokan NB, Lebedev AA, Davydov DV, Savkina NS, Bogdanova EV
Materials Science Forum, 389-3, 1439, 2002
4 Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region
Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV
Materials Science Forum, 433-4, 427, 2002
5 Radiation hardness of silicon carbide
Lebedev AA, Kozlovski VV, Strokan NB, Davydov DV, Ivanov AM, Strel'chuk AM, Yakimova R
Materials Science Forum, 433-4, 957, 2002
6 P-type 6H-SiC films in the creation of triode structures for low ionization radiation
Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Strelchuk AM, Lebedev AA, Yakimova R
Materials Science Forum, 433-4, 969, 2002
7 Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates
Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Solov'ev VA, Poletaev NK
Applied Surface Science, 184(1-4), 419, 2001
8 Radiation hardness of SiC based ions detectors for influence of the relative protons
Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Lebedev AA, Mironov YT, Riabov GA, Ivanov EM
Applied Surface Science, 184(1-4), 431, 2001
9 Triode structure of ion detector based on 6H-SiC epitaxial films
Strokan NB, Ivanov AM, Davydov DV, Savkina NS, Bogdanova EV, Kuznetsov AN, Lebedev AA
Applied Surface Science, 184(1-4), 455, 2001
10 Thin heavily compensated 6H-SiC epilayers as nuclear particle detectors
Lebedev AA, Strokan NB, Ivanov AM, Davydov DV, Kozlovskii VV
Materials Science Forum, 353-356, 763, 2001