검색결과 : 14건
No. | Article |
---|---|
1 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
2 |
p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK Materials Science Forum, 389-3, 683, 2002 |
3 |
N and p type 6H-SiC films for the creation diode and triode structure of nuclear particle detectors Ivanov AM, Strokan NB, Lebedev AA, Davydov DV, Savkina NS, Bogdanova EV Materials Science Forum, 389-3, 1439, 2002 |
4 |
Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV Materials Science Forum, 433-4, 427, 2002 |
5 |
Radiation hardness of silicon carbide Lebedev AA, Kozlovski VV, Strokan NB, Davydov DV, Ivanov AM, Strel'chuk AM, Yakimova R Materials Science Forum, 433-4, 957, 2002 |
6 |
P-type 6H-SiC films in the creation of triode structures for low ionization radiation Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Strelchuk AM, Lebedev AA, Yakimova R Materials Science Forum, 433-4, 969, 2002 |
7 |
Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Solov'ev VA, Poletaev NK Applied Surface Science, 184(1-4), 419, 2001 |
8 |
Radiation hardness of SiC based ions detectors for influence of the relative protons Ivanov AM, Strokan NB, Davydov DV, Savkina NS, Lebedev AA, Mironov YT, Riabov GA, Ivanov EM Applied Surface Science, 184(1-4), 431, 2001 |
9 |
Triode structure of ion detector based on 6H-SiC epitaxial films Strokan NB, Ivanov AM, Davydov DV, Savkina NS, Bogdanova EV, Kuznetsov AN, Lebedev AA Applied Surface Science, 184(1-4), 455, 2001 |
10 |
Thin heavily compensated 6H-SiC epilayers as nuclear particle detectors Lebedev AA, Strokan NB, Ivanov AM, Davydov DV, Kozlovskii VV Materials Science Forum, 353-356, 763, 2001 |