검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing Felch SB, Collart E, Parihar V, Thirupapuliyur S, Schreutelkamp R, Pawlak BJ, Hoffmann T, Severi S, Eyben P, Vandervorst W, Noda T Journal of Vacuum Science & Technology B, 26(1), 281, 2008 |
| 2 |
Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultra-shallow junction formation Collart EJH, Felch SB, Pawlak BJ, Absil PP, Severi S, Janssens T, Vandervorst W Journal of Vacuum Science & Technology B, 24(1), 507, 2006 |
| 3 |
Profiling of ultrashallow junctions Goeckner MJ, Felch SB, Fang Z, Oberhofer A, Chia VKF, Mount GR, Poulakos M, Keenan WA Journal of Vacuum Science & Technology B, 18(1), 472, 2000 |
| 4 |
Evaluation of charging damage test structures for ion implantation processes Goeckner MJ, Felch SB, Weeman J, Mehta S, Reedholm JS Journal of Vacuum Science & Technology A, 17(4), 1501, 1999 |
| 5 |
Plasma doping for shallow junctions Goeckner MJ, Felch SB, Fang Z, Lenoble D, Galvier J, Grouillet A, Yeap GCF, Bang D, Lin MR Journal of Vacuum Science & Technology B, 17(5), 2290, 1999 |
| 6 |
Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and BF2 Harrington WL, Magee CW, Pawlik M, Downey DF, Osburn CM, Felch SB Journal of Vacuum Science & Technology B, 16(1), 286, 1998 |
| 7 |
Process effects in shallow junction formation by plasma doping Matyi RJ, Felch SB, Lee BS, Strathman MR, Keenan JA, Guo Y, Wang L Journal of Vacuum Science & Technology B, 16(1), 435, 1998 |
| 8 |
Comparison of Different Analytical Techniques in Measuring the Surface Region of Ultrashallow Doping Profiles Felch SB, Chapek DL, Malik SM, Maillot P, Ishida E, Magee CW Journal of Vacuum Science & Technology B, 14(1), 336, 1996 |
| 9 |
Study of Electrical Measurement Techniques for Ultra-Shallow Dopant Profiling Ishida E, Felch SB Journal of Vacuum Science & Technology B, 14(1), 397, 1996 |
| 10 |
Structural Characterization of Plasma-Doped Silicon by High-Resolution X-Ray-Diffraction Chapek DL, Conrad JR, Matyi RJ, Felch SB Journal of Vacuum Science & Technology B, 12(2), 951, 1994 |