검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 2 |
Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells Fallica R, Battaglia JL, Cocco S, Monguzzi C, Teren A, Wiemer C, Varesi E, Cecchini R, Gotti A, Fanciulli M Journal of Chemical and Engineering Data, 54(6), 1698, 2009 |
| 3 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F, Bez R Solid-State Electronics, 52(4), 584, 2008 |
| 4 |
Phase-change memory technology with self-aligned mu Trench cell architecture for 90 nm node and beyond Pirovano A, Pellizzer F, Tortorelli I, Rigano A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G, Bez R Solid-State Electronics, 52(9), 1467, 2008 |