검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
On the Coupling of Electron Transfer to Proton Transfer at Electrified Interfaces Ge AM, Kastlunger G, Meng JH, Lindgren P, Song J, Liu QL, Zaslavsky A, Lian TQ, Peterson AA Journal of the American Chemical Society, 142(27), 11829, 2020 |
| 2 |
Preface to the FTM-2018 special issue Preface Luryi S, Xu JM, Zaslavsky A Solid-State Electronics, 155, 1, 2019 |
| 3 |
Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors Song Y, Katsman A, Butcher AL, Paine DC, Zaslavsky A Solid-State Electronics, 136, 43, 2017 |
| 4 |
Channel scaling and field-effect mobility extraction in amorphous InZnO thin film transistors Lee S, Song Y, Park H, Zaslavsky A, Paine DC Solid-State Electronics, 135, 94, 2017 |
| 5 |
High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO2 gate insulator Song Y, Zaslavsky A, Paine DC Thin Solid Films, 614, 52, 2016 |
| 6 |
Z(2)-FET: A promising FDSOI device for ESD protection Solaro Y, Wan J, Fonteneau P, Fenouillet-Beranger C, Le Royer B, Zaslavsky A, Ferrari P, Cristoloveanu S Solid-State Electronics, 97, 23, 2014 |
| 7 |
Untitled Calleja E, Cristoloveanu S, Kuk Y, Zaslavsky A Solid-State Electronics, 79, 1, 2013 |
| 8 |
Progress in Z(2)-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage Wan J, Le Royer C, Zaslavsky A, Cristoloveanu S Solid-State Electronics, 84, 147, 2013 |
| 9 |
A systematic study of the sharp-switching Z(2)-FET device: From mechanism to modeling and compact memory applications Wan J, Le Royer C, Zaslavsky A, Cristoloveanu S Solid-State Electronics, 90, 2, 2013 |
| 10 |
Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology Cosentino S, Mirabella S, Liu P, Le ST, Miritello M, Lee S, Crupi I, Nicotra G, Spinella C, Paine D, Terrasi A, Zaslavsky A, Pacifici D Thin Solid Films, 548, 551, 2013 |