Solid-State Electronics

Solid-State Electronics, Vol.103 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (39 articles)

1 - 6	A finite state machine read-out chip for integrated surface acoustic wave sensors Rakshit S, Iliadis AA
7 - 14	Experimental developments of A2RAM memory substrates cells on SOI and bulk substrates Rodriguez N, Gamiz F, Navarro C, Marquez C, Andrieu F, Faynot O, Cristoloveanu S
15 - 18	Superconducting platinum suicide for electron cooling in silicon Prest MJ, Richardson-Bullock JS, Zhao QT, Muhonen JT, Gunnarsson D, Prunnila M, Shah VA, Whall TE, Parker EHC, Leadley DR
19 - 29	On the effect of technology scaling on variation-resilient sub-threshold circuits Reynders N, Dehaene W
30 - 39	Analytical modeling of multi-layered Printed Circuit Board dedicated to electronic component thermal characterization Monier-Vinard E, Laraqi N, Dia CT, Nguyen MN, Bissuel V
40 - 43	Comparison of electron-phonon and hole-phonon energy loss rates in silicon Richardson-Bullock JS, Prest MJ, Shah VA, Gunnarsson D, Prunnila M, Dobbie A, Myronov M, Morris RJH, Whall TE, Parker EHC, Leadley DR
44 - 48	GaN-InGaN LED efficiency reduction from parasitic electron currents in p-GaN Togtema G, Georgiev V, Georgieva D, Gergova R, Butcher KSA, Alexandrov D
49 - 53	High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O-2 treatment Seok O, Han MK, Byun YC, Kim J, Shin HC, Ha MW
54 - 58	Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique Liau LCK, Lin YG
59 - 63	Model of current-limited negative differential resistance in oxide-based resistance-switching devices Chen FT
64 - 72	50 nm AlxOy ReRAM program 31% energy, 1.6x endurance, and 3.6x speed improvement by advanced cell condition adaptive verify-reset Ning SY, Iwasak TO, Takeuchi K
73 - 78	A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM Aziza H, Bocquet M, Moreau M, Portal JM
79 - 82	Stable single mode operation of quantum cascade lasers by complex-coupled second-order distributed feedback grating Liu YH, Zhang JC, Jia ZW, Yao DY, Yan FL, Liu FQ, Wang LJ, Liu JQ, Wang ZG
83 - 89	Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes Yuan H, Tang XY, Song QW, Zhang YM, Zhang YM, Yang F, Niu YX
90 - 97	Interface pn junction arrays with high yielded grown p-Si microneedles by vapor-liquid-solid method at low temperature Islam MS, Ishida M
98 - 103	Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel Baek KJ, Na KY, Lee YJ, Kim YS
104 - 109	N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martin M, Gonzalez B, Garcia J, Hernandez A
110 - 114	Integration of crystalline orientated gamma-Al2O3 films and complementary metal-oxide-semiconductor circuits on Si(100) substrate Oishi K, Akai D, Ishida M
115 - 121	Estimation of the accuracy of the microwave FET equivalent circuit using the quasi-hydrodynamic model of electron transport Garber GZ
122 - 126	Design, fabrication and test of novel LDMOS-SCR for improving holding voltage Yang L, Wang Y, Zhou AC, Jin XL
127 - 130	Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics Wu TL, Marcon D, Ronchi N, Bakeroot B, You SZ, Stoffels S, Van Hove M, Bisi D, Meneghini M, Groeseneken G, Decoutere S
131 - 139	Thermoelectric generators from SiO2/SiO2 + Ge nanolayer thin films modified by MeV Si ions Budak S, Gulduren E, Allen B, Cole J, Lassiter J, Colon T, Muntele C, Allan MA, Bhattacharjee S, Johnson RB
140 - 146	Energy capability improvement of power DMOS transistors operating in pulsed conditions Costachescu D, Pfost M
147 - 153	A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application Li Y, Wang C, Kim NY
154 - 161	Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET Anvarifard MK, Orouji AA
162 - 166	Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs Loghmany A, Valizadeh P
167 - 172	The impact of stress-induced defects on MOS electrostatics and short-channel effects Esqueda IS
173 - 177	The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility Tseng WH, Fang SW, Lu CY, Chuang HY, Chang FW, Lin GY, Chen TW, Ma KH, Chen HS, Chen TK, Chen YH, Lee JY, Shih TH, Ting HC, Chen CY, Lin YH, Hong HJ
178 - 183	Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization Hong WE, Ro JS
184 - 189	Luminescence and spectrum variations caused by thermal annealing in undoped and doped polyfluorene OLEDs Jokinen K, Bykov A, Sliz R, Remes K, Fabritius T, Myllyla R
190 - 194	Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM) Chin FT, Lin YH, Yang WL, Liao CH, Lin LM, Hsiao YP, Chao TS
195 - 198	Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance Park JC, Lee HN
199 - 201	A novel scaling theory for fully depleted pi-gate (Pi G) MOSFETs Chiang TK
202 - 208	Methodology for 1/f noise parameter extraction for high-voltage MOSFETs Mavredakis N, Pflanzl W, Seebacher E, Bucher M
209 - 215	Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs Buuhler RT, Agopian PGD, Collaert N, Simoen E, Claeys C, Martino JA
216 - 221	Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band Kawasaki T, Sugawara K, Dobroiu A, Eto T, Kurita Y, Kojima K, Yabe Y, Sugiyama H, Watanabe T, Suemitsu T, Ryzhii V, Iwatsuki K, Fukada Y, Kani J, Terada J, Yoshimoto N, Kawahara K, Ago H, Otsuji T
222 - 228	Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology Wang GL, Abedin A, Moeen M, Kolandouz M, Luo J, Guo YL, Chen T, Yin HX, Zhu HL, Li JF, Zhao C, Radamson HH
229 - 235	Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs Shin M, Shi M, Mouis M, Cros A, Josse E, Mukhopadhyay S, Piot B, Kim GT, Ghibaudo G
236 - 241	Multi-input intrinsic and extrinsic field effect transistor models beyond cutoff frequency Ibrahim NY, Rafat NH, Elnahwy SEA