Solid-State Electronics

Solid-State Electronics, Vol.111 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (39 articles)

1 - 6	On the extraction of the external drain and source resistors and effective channel length in Si-MOSFET Joodaki M
7 - 11	Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-kappa HfO2 LTPS-TFTs Chang KM, Huang BW, Wu CH, Deng IC, Chang TC, Lin SC
12 - 17	Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts Taube A, Kaczmarski J, Kruszka R, Grochowski J, Kosiel K, Golaszewska-Malec K, Sochacki M, Jung W, Kaminska E, Piotrowska A
18 - 21	Effect of annealing temperature on the electrical properties of In-Zn-Li-O thin film transistors Li B, Wang HL, Zhou DZ, Hu ZF, Wu HH, Peng YF, Yi LX, Zhang XQ, Wang YS
22 - 26	Effect of uncertainty principle on the Wigner function-based simulation of quantum transport Kim KY, Kim S
27 - 31	Engineering of chalcogenide materials for embedded applications of Phase Change Memory Zuliani P, Palumbo E, Borghi M, Libera GD, Annunziata R
32 - 41	A modern perspective on the history of semiconductor nitride blue light sources Maruska HP, Rhines WC
42 - 46	Multilevel metal/Pb(Zr0.52Ti0.48)O-3/TiOxNy/Si for next generation FeRAM technology node Sharma DK, Khosla R, Sharma SK
47 - 51	An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs Villena MA, Gonzalez MB, Roldan JB, Campabadal F, Jimenez-Molinos F, Gomez-Campos FM, Sune J
52 - 57	All regimes mobility extraction using split C-V technique enhanced with charge-sheet model Hubert Q, Carmona M, Rebuffat B, Innocenti J, Masson P, Masoero L, Julien F, Lopez L, Chiquet P
58 - 61	Low temperature fabrication of high performance ZnO thin film transistors with high-k dielectrics Walker B, Pradhan AK, Xiao B
62 - 66	Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H
67 - 75	Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability Kim SC, Kim YS, Yu EKH, Kanicki J
76 - 79	Response of plasmonic terahertz detectors to amplitude modulated signals Rupper G, Rudin S, Shur M
80 - 90	Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model Banadaki YM, Srivastava A
91 - 99	Integration of GMR-based spin torque oscillators and CMOS circuitry Chen T, Eklund A, Sani S, Rodriguez S, Malm BG, Akerman J, Rusu A
100 - 103	Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology Theodorou CG, Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G
104 - 110	Detailed 8-transistor SRAM cell analysis for improved alpha particle radiation hardening in nanometer technologies Bota SA, Torrens G, Verd J, Segura J
111 - 117	High-power UV-LED degradation: Continuous and cycled working condition influence Arques-Orobon FJ, Nunez N, Vazquez M, Segura-Antunez C, Gonzalez-Posadas V
118 - 122	Extraction and modeling of layout-dependent MOSFET gate-to-source/drain fringing capacitance in 40 nm technology Sun LJ, Shang GB, Liu LL, Cheng J, Guo A, Ren Z, Hu SJ, Chen SM, Zhao YH, Chan MS, Zhang L, Li XJ, Shi YL
123 - 128	Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction Karatsori TA, Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G
129 - 140	Advanced error-prediction LDPC with temperature compensation for highly reliable SSDs Tokutomi T, Tanakamaru S, Iwasaki TO, Takeuchi K
141 - 146	Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S
147 - 152	Efficiency analysis of betavoltaic elements Sachenko AV, Shkrebtii AI, Korkishko RM, Kostylyov VP, Kulish MR, Sokolovskyi IO
153 - 160	Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors Bak JY, Kim SJ, Byun CW, Pi JE, Ryu MK, Hwang CS, Yoon SM
161 - 165	Conductive filament structure in HfO2 resistive switching memory devices Privitera S, Bersuker G, Lombardo S, Bongiorno C, Gilmer DC
166 - 170	Effects of the optical absorption of a LED chip on the LED package Kim KH, Kim WH, Jeon SW, Choi M, Bin Song S, Kim JP
171 - 179	Analytical model of drain current of cylindrical surrounding gate p-n-i-n TFET Xu WJ, Wong H, Iwai H
180 - 187	A new explicit and analytical model for square Gate-All-Around MOSFETs with rounded corners Moreno E, Villada MP, Ruiz FG, Roldan JB, Marin EG
188 - 195	Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials Hiblot G, Rafhay Q, Boeuf F, Ghibaudo G
196 - 203	Compact model for short-channel symmetric double-gate junctionless transistors Avila-Herrera F, Cerdeira A, Paz BC, Estrada M, Iniguez B, Pavanello MA
204 - 209	Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver Song SJ, Kim BH, Jang J, Nam H
210 - 217	Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes Mok KRC, Qi L, Vlooswijk AHG, Nanver LK
218 - 222	Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator Kim T, Kim DH
223 - 226	Surface treatment to improve responsivity of MgZnO UV detectors Zhao YJ, Jiang DY, Liu RS, Duan Q, Tian CG, Sun L, Gao S, Qin JM, Liang QC, Zhao JX
227 - 233	Commercially applicable, solution-processed organic TFT and its backplane application in electrophoretic displays Park CB, Lee JE, Na H, Kim KM, Yoo SS, Yang MS
234 - 237	Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes Gaur A, Filmer M, Thomas P, Bhatnagar K, Droopad R, Rommel S
238 - 242	Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices Recher S, Yalon E, Ritter D, Riess I, Salzman J
243 - 250	Loss mechanisms influence on Cu2ZnSnS4/CdS-based thin film solar cell performance Courel M, Andrade-Arvizu JA, Vigil-Galan O