| 1 - 1 |
Extended papers selected from ESSDERC 2015
Grasser T, Schmitz J, Lemme MC |
| 2 - 13 |
Theoretical analysis and modeling for nanoelectronics
Baccarani G, Gnani E, Gnudi A, Reggiani S |
| 14 - 24 |
UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels
Berthier F, Beigne E, Heitzmann F, Debicki O, Christmann JF, Valentian A, Billoint O, Amat E, Morche D, Chairat S, Sentieys O |
| 25 - 38 |
A review of emerging non-volatile memory (NVM) technologies and applications
Chen A |
| 39 - 51 |
Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications
Gatensby R, Hallam T, Lee K, McEvoy N, Duesberg GS |
| 52 - 62 |
The defect-centric perspective of device and circuit reliability-From gate oxide defects to circuits
Kaczer B, Franco J, Weckx P, Roussel PJ, Simicic M, Putcha V, Bury E, Cho M, Degraeve R, Linten D, Groeseneken G, Debacker P, Parvais B, Raghavan P, Catthoor F, Rzepa G, Waltl M, Goes W, Grasser T |
| 63 - 72 |
UTBB FDSOI: Evolution and opportunities
Monfray S, Skotnicki T |
| 73 - 81 |
FinFET and UTBB for RF SOI communication systems
Raskin JP |
| 82 - 102 |
III-V/Ge MOS device technologies for low power integrated systems
Takagi S, Noguchi M, Kim M, Kim SH, Chang CY, Yokoyama M, Nishi K, Zhang R, Ke M, Takenaka M |
| 103 - 110 |
A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
El Dirani H, Solaro Y, Fonteneau P, Legrand CA, Marin-Cudraz D, Golanski D, Ferrari P, Cristoloveanu S |
| 111 - 117 |
The world's first high voltage GaN-on-Diamond power semiconductor devices
Baltynov T, Unni V, Narayanan EMS |
| 118 - 124 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
Capriotti M, Treidel EB, Fleury C, Bethge O, Ostermaier C, Rigato M, Lancaster SLC, Brunner F, Detz H, Hilt O, Wurfl J, Pogany D, Strasser G |
| 125 - 132 |
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
Jauss SA, Kilian S, Schwaiger S, Noll S, Daves W, Ambacher O |
| 133 - 141 |
EDMOS in ultrathin FDSOI: Impact of the drift region properties
Litty A, Ortolland S, Golanski D, Dutto C, Cristoloveanu S |
| 142 - 153 |
Characterization of charge trapping phenomena at III-N/dielectric interfaces
Stradiotto R, Pobegen G, Ostermaier C, Grasser T |
| 154 - 160 |
Back-gate effects and mobility characterization in junctionless transistor
Parihar MS, Liu FY, Navarro C, Barraud S, Bawedin M, Ionica I, Kranti A, Cristoloveanu S |
| 161 - 166 |
Contact resistance extraction methods for short- and long-channel
Pacheco-Sanchez A, Claus M, Mothes S, Schroter M |
| 167 - 174 |
Low-frequency noise in bare SOI wafers: Experiments and model
Pirro L, Ionica I, Cristoloveanu S, Ghibaudo G |
| 175 - 181 |
Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model
Pelloux-Prayer J, Casse M, Triozon F, Barraud S, Niquet YM, Rouviere JL, Faynot O, Reimbold G |
| 182 - 188 |
Improvement of performances HfO2-based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al2O3
Azzaz M, Benoist A, Vianello E, Garbin D, Jalaguier E, Cagli C, Charpin C, Bernasconi S, Jeannot S, Dewolf T, Audoit G, Guedj C, Denorme S, Candelier P, Fenouillet-Beranger C, Perniola L |
| 189 - 197 |
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10 mu A)
Belmonte A, Fantini A, Redolfi A, Houssa M, Jurczak M, Goux L |
| 198 - 203 |
Stack optimization of oxide-based RRAM for fast write speed (< 1 mu s) at low operating current (< 10 mu A)
Chen CY, Goux L, Fantini A, Degraeve R, Redolfi A, Groeseneken G, Jurczak M |
| 204 - 213 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory
Puglisi FM, Larcher L, Padovani A, Pavan P |
| 214 - 219 |
Compact heterodyne NEMS oscillator for sensing applications
Sansa M, Gourlat G, Jourdan G, Gely M, Villard P, Sicard G, Hentz S |
| 220 - 226 |
Tri-linear color multi-linescan sensor with 200 kHz line rate
Schrey O, Brockherde W, Nitta C, Bechen B, Bodenstorfer E, Brodersen J, Mayer KJ |
| 227 - 233 |
Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method
Pelamatti A, Goiffon V, Chabane A, Magnan P, Virmontois C, Saint-Pe O, de Boisanger MB |
| 234 - 239 |
Contact resistance study of various metal electrodes with CVD graphene
Gahoi A, Wagner S, Bablich A, Kataria S, Passi V, Lemme MC |
| 240 - 246 |
Plasmonic and electronic device-based integrated circuits and their characteristics
Sakai H, Okahisa S, Nakayama Y, Nakayama K, Fukuhara M, Kimura Y, Ishii Y, Fukuda M |
| 247 - 253 |
Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A
Ziemys G, Giebfried A, Becherer M, Eichwald I, Schmitt-Landsiedel D, Breitkreutz-von Gamm S |
