Solid-State Electronics

Solid-State Electronics, Vol.72 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 3	Early effect of SiGe heterojunction bipolar transistors Xu XB, Zhang HM, Hu HY, Qu JT
4 - 7	Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films Liao ZL, Gao P, Meng Y, Fu WY, Bai XD, Zhao HW, Chen DM
8 - 11	Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA
12 - 14	Improvement of n(+)-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal Wang MC, Chang TC, Tsao S, Chen YZ, Hsu TC, Jan DJ, Ai CF, Chen JR
15 - 21	Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs Berthet F, Guhel Y, Gualous H, Boudart B, Trolet JL, Piccione M, Sbrugnera V, Grimbert B, Gaquiere C
22 - 28	Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors Chu KY, Cheng SY, Chiang MH, Liu YJ, Huang CC, Chen TY, Hsu CS, Liu WC, Cheng WY, Lin BC
29 - 37	Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O-3 sensing Varenne C, Ndiaye A, Brunet J, Monier G, Spinelle L, Pauly A, Bideux L, Lauron B, Robert-Goumet C
38 - 43	AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric Lee KH, Chang PC, Chang SJ, Su YK
44 - 47	Reduction of the trap density at the organic-organic interface and resultant gate-bias dependency of the mobility in an organic thin-film transistor Bae JH, Choi Y
48 - 51	Improvement of AZO/p-a-SiC:H contact by the p-mu c-Si:H insertion layer and its application to a-Si:H solar cells Chang PK, Tsai FJ, Lu CH, Yeh CH, Wang NF, Houng MP
52 - 55	Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors Kimura M, Taya J, Nakashima A
56 - 59	Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface Yan DW, Lu H, Chen DJ, Zhang R, Zheng YD, Qian X, Li AD
60 - 66	Electrical bistable properties of copper phthalocyanine at different deposition rates Onlaor K, Tunhoo B, Keeratithiwakorn P, Thiwawong T, Nukeaw J
67 - 72	Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs Tai YH, Chiu HL, Chou LS
73 - 77	Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films Mahne H, Berger L, Martin D, Klemm V, Slesazeck S, Jakschik S, Rafaja D, Mikolajick T
78 - 81	Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I-V and low frequency C-V measurement Shin JS, Bae H, Hong E, Jang J, Yun D, Lee J, Kim DH, Kim DM
82 - 87	Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs Vandooren A, Leonelli D, Rooyackers R, Arstila K, Groeseneken G, Huyghebaert C
88 - 92	Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature Lee SM, Yu CG, Cho WJ, Park JT