1 - 3 |
p/i/n-Type poly-Si thin-film transistor for quasi-static capacitance-voltage measurement Kimura M, Hiroshima Y |
4 - 10 |
A comprehensive model for the diffusion of boron in silicon in presence of fluorine Wolf FA, Martinez-Limia A, Pichler P |
11 - 16 |
Charge based DC compact modeling of bulk FinFET transistor Cerdeira A, Garduno I, Tinoco J, Ritzenthaler R, Franco J, Togo M, Chiarella T, Claeys C |
17 - 20 |
Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain Munzenrieder N, Zysset C, Petti L, Kinkeldei T, Salvatore GA, Troster G |
21 - 26 |
Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices Wong FJ, Sriram TS, Smith BR, Ramanathan S |
27 - 33 |
Advanced Si-based substrates for RF passive integration: Comparison between local porous Si layer technology and trap-rich high resistivity Si Sarafis P, Hourdakis E, Nassiopoulou AG, Neve CR, Ben Ali K, Raskin JP |
34 - 42 |
Single and compact ESD device Beta-Matrix solution based on bidirectional SCR Network in advanced 28/32 nm technology node Bourgeat J, Galy P |
43 - 50 |
Development of an ethanol sensor based on CBD grown ZnO nanorods Roy S, Banerjee N, Sarkar CK, Bhattacharyya P |
51 - 57 |
Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P |
58 - 63 |
Numerical investigation of Auger contributed performance loss in long wavelength infrared HgCdTe photodiodes Kocer H |
64 - 68 |
A study of donor/acceptor interfaces in a blend of P3HT/PCBM solar cell: Effects of annealing and PCBM loading on optical and electrical properties Oklobia O, Shafai TS |
69 - 73 |
Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach Deng WL, Huang JK |
74 - 79 |
Back biasing effects in tri-gate junctionless transistors Park SJ, Jeon DY, Montes L, Barraud S, Kim GT, Ghibaudo G |
80 - 84 |
A resistive-type sensor based on flexible multi-walled carbon nanotubes and polyacrylic acid composite films Lee J, Cho D, Jeong Y |
85 - 89 |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J |
90 - 97 |
A systematic approach for hydrodynamic model calibration in the quasi-ballistic regime Shih KH, Pan A, Liu Y, Chui CO |
98 - 103 |
Effect of sol-gel ZnO spin-coating on the performance of TiO2-based dye-sensitized solar cell Al-juaid F, Merazga A, Al-Baradi A, Abdel-wahab F |