Solid-State Electronics

Solid-State Electronics, Vol.56, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (40 articles)

1 - 7	Traps centers impact on Silicon nanocrystal memories given by Random Telegraph Signal and low frequency noise Trabelsi M, Militaru L, Sghaier N, Souifi A, Yacoubi N
8 - 12	Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure Chang LC, Kuo CH, Kuo CW
13 - 17	Temperature model for Ge2Sb2Te5 phase change memory in electrical memory device Cai DL, Song ZT, Chen HP, Chen XG
18 - 22	Microwave noise modeling of FinFETs Crupi G, Caddemi A, Schreurs DMMP, Wiatr W, Mercha A
23 - 30	Comprehensive numerical simulation of threshold-voltage transients in nitride memories Mauri A, Amoroso SM, Compagnoni CM, Maconi A, Spinelli AS
31 - 34	Investigation of GaN-based light-emitting diodes using double photonic crystal patterns Huang HW, Lai FI, Kuo SY, Huang JK, Lee KY
35 - 39	On relationship between the field at an autoemitter top, anode voltage and cathode geometry Stetsenko BV, Shchurenko AI
40 - 46	A unified short-channel compact model for cylindrical surrounding-gate MOSFET Cousin B, Reyboz M, Rozeau O, Jaud MA, Ernst T, Jomaah J
47 - 55	Optimization of SiGe bandgap-based circuits for up to 300 degrees C operation Thomas DB, Najafizadeh L, Cressler JD, Moen KA, Lourenco N
56 - 59	Implantation angle periphery effects on non-alloyed Si-implanted ohmic contacts for AlGaN/GaN high electron mobility transistors Kocan M, Recht F, Umana-Membreno GA, Kilburn MR, Nener BD, Mishra UK, Parish G
60 - 67	Physical limitations of the diffusive approximation in semiconductor device modeling Mnatsakanov TT, Tandoev AG, Levinshtein ME, Yurkov SN
68 - 72	Effects of Ge-72/Ge-74 preamorphization combined with sub-keV boron implantation in pMOSFET fabrication Chen LC, Chen SF, Wu MC
73 - 78	Over 1000 V/30 mA operation GaN-on-Si MOSFETs fabricated on Si substrates Niiyama Y, Li ZD, Chow TP, Li JA, Nomura T, Kato S
79 - 84	Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses Lee HK, Lee DH, Song YM, Lee YT, Yu JS
85 - 88	A highly-compact packaging design for improving the thermal performance of multi-finger InGaP/GaAs collector-up HBTs Tseng HC, Chen JY
89 - 94	Direct determination of threshold condition in DG-MOSFETs from the g(m)/I-D curve Cunha AIA, Pavanello MA, Trevisoli RD, Galup-Montoro C, Schneider MC
95 - 99	Comparative study of quasi-static and normal capacitance-voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors Lee S, Jeon YW, Kim S, Kong D, Kim DH, Kim DM
100 - 103	Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes Rao GK, Bangera KV, Shivakumar GK
104 - 110	Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of < 1 1 1 > and < 1 0 0 > crystal orientation at high electric fields Becker J, Fretwurst E, Klanner R
111 - 115	Channel scaling of hybrid GaN MOS-HEMTs Li ZD, Chow TP
116 - 119	Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors Millithaler JF, Pousset J, Reggiani L, Marinchio H, Varani L, Palermo C, Ziade P, Mateos J, Gonzalez T, Perez S
120 - 129	Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations Kaushal V, Iniguez-de-la-Torre I, Margala M
130 - 134	Electrical characteristics of nickel suicide-silicon heterojunction in suspended silicon nanowires Hong SH, Kang MG, Kim BS, Kim DS, Ahn JH, Whang D, Sull SH, Hwang SW
135 - 140	Dynamic model of AlGaN/GaN HFET for high voltage switching Koudymov A
141 - 147	A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Satter MM, Islam AE, Varghese D, Alam MA, Haque A
148 - 154	A surface potential based drain current model for asymmetric double gate MOSFETs Dutta P, Syamal B, Mohankumar N, Sarkar CK
155 - 158	Improved performance of mixed single layer top-emission organic light emitting devices using capping layer Wang ZK, Naka S, Okada H
159 - 162	In-cell adaptive touch technology for a flexible e-paper display Lee JK, Kim SS, Park YI, Kim CD, Hwang YK
163 - 167	High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Kambayashi H, Satoh Y, Kokawa T, Ikeda N, Nomura T, Kato S
168 - 174	Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer Muller C, Deleruyelle D, Muller R, Thomas M, Demolliens A, Turquat C, Spiga S
175 - 178	Effects of residual copper selenide on CuInGaSe2 solar cells Hsieh TP, Chuang CC, Wu CS, Chang JC, Guo JW, Chen WC
179 - 184	Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications Ullan M, Diez S, Lozano M, Pellegrini G, Knoll D, Heinemann B
185 - 190	Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties Hossein-Babaei F, Rahbarpour S
191 - 195	SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer Qu LW, Miao XS, Sheng JJ, Li Z, Sun JJ, An P, Huang JD, Yang DH, Liu C
196 - 200	Transient electroluminescence determination of carrier mobility and charge trapping effects in heavily doped phosphorescent organic light-emitting diodes Lin MT, Li MH, Chen WH, Omary MA, Shepherd ND
201 - 206	AlGaN/GaN hybrid MOS-HEMT analytical mobility model Perez-Tomas A, Fontsere A
207 - 210	Degradation evaluation of poly-Si TFTs by comparing normal and reverse characteristics and behavior analysis of hot-carrier degradation Kasakawa T, Tabata H, Onodera R, Kojima H, Kimura M, Hara H, Inoue S
211 - 213	A mechanism for asymmetric data writing failure Lee MJ, Park KW
214 - 218	Mobility degradation and transistor asymmetry impact on field effect transistor access resistances extraction Tinoco JC, Martinez-Lopez AG, Raskin JP
219 - 222	Leakage current mechanisms in sub-50 nm recess-channel-type DRAM cell transistors with three-terminal gate-controlled diodes Chung EA, Kim YP, Nam KJ, Lee S, Min JY, Shin YG, Choi S, Jin G, Moon JT, Kim S