Solid-State Electronics

Solid-State Electronics, Vol.63, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (34 articles)

1 - 4	Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior Jeong DS, Cheong BK, Kohlstedt H
5 - 7	Advanced PBTI reliability with 0.69 nm EOT GdHfO gate dielectric Cho M, Aoulaiche M, Degraeve R, Kaczer B, Kauerauf T, Ragnarsson LA, Adelmann C, Van Elshocht S, Hoffmann TY, Groeseneken G
8 - 13	Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley-Read-Hall centres Jozwikowski K, Kopytko M, Piotrowski J, Jozwikowska A, Orman Z, Rogalski A
14 - 18	Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang XS, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A
19 - 21	Au/CaF2/nSi(111) tunnel emitter phototransistor Vexler MI, Illarionov YY, Suturin SM, Fedorov VV, Sokolov NS
22 - 26	A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs Garcia-Sanchez FJ, Latorre-Rey AD, Liu W, Chen WC, Lin HC, Liou JJ, Muci J, Ortiz-Conde A
27 - 36	LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Simoen E, Claeys C
37 - 41	Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors Tsai SY, Hon MH, Lu YM
42 - 48	Direct parameter-extraction method for MOSFET noise model from microwave noise figure measurement Gao JJ
49 - 54	Modeling of current-voltage characteristics of thin film solar cells Mannan MA, Anjan MS, Kabir MZ
55 - 59	Influence of mechanical bending and temperature on the threshold voltage instability of a-Si:H thin-film transistors under electrical stress Taso SW, Chang TC, Wang MC, Chen SC, Lu J, Weng CF, Wei YF, Wu WC, Shi Y
60 - 69	A software tool for the design of high power PiN diodes based on the numerical study of the reverse characteristics Cova P, Delmonte N, Bertoluzza F
70 - 75	Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I-V method Constant A, Godignon P
76 - 82	Expanded graphite/pencil-lead as counter electrode for dye-sensitized solar cells Wei YS, Jin QQ, Ren TZ
83 - 88	Efficiency improvement of polymer solar cells by iodine doping Zhuo ZL, Zhang FJ, Wang J, Wang J, Xu XW, Xu Z, Wang YS, Tang WH
89 - 93	Optimization of Pb(Zr-0.53,Ti-0.47)O-3 films for micropower generation using integrated cantilevers Fuentes-Fernandez E, Baldenegro-Perez L, Quevedo-Lopez M, Gnade B, Hande A, Shah P, Alshareef HN
94 - 99	Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing Kimura M
100 - 104	Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications Tang MH, Zeng ZQ, Li JC, Wang ZP, Xu XL, Wang GY, Zhang LB, Yang SB, Xiao YG, Jiang B
105 - 109	Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells Lin S, Zhang BP, Zeng SW, Cai XM, Zhang JY, Wu SX, Ling AK, Weng GE
110 - 114	Analytical model of single-gate silicon-on-insulator (SOI) tunneling field-effect transistors (TFETs) Lee MJ, Choi WY
115 - 118	Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory Sung MG, Kim SJ, Joo MS, Roh JS, Ryu C, Hong S, Kim H, Kim YS
119 - 129	2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current Schwarz M, Holtij T, Kloes A, Iniguez B
130 - 136	A straightforward method to extract the shunt resistance of photovoltaic cells from current-voltage characteristics of mounted arrays d'Alessandro V, Guerriero P, Daliento S, Gargiulo M
137 - 139	Simulation algorithm of carrier transport subject to Lorentz force in semiconductor films Kimura M, Hirako M, Yamaoka T, Tani S
140 - 144	Highly controllable dual-gate microcrystalline silicon thin film transistor processed at low temperature (T < 180 degrees C) Kandoussi K, Jacques E, Coulon N, Simon C, Mohammed-Brahim T
145 - 148	Miniature and tunable millimeter-wave lowpass filter with MEMS switch Guo XL, Jin Y
149 - 153	Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs DG-HEMT for millimeter-wave applications Bhattacharya M, Jogi J, Gupta RS, Gupta M
154 - 157	The optimization of deep trench isolation structure for high voltage devices on SOI substrate Qian QS, Sun WF, Han DX, Liu SY, Su Z, Shi LX
158 - 162	Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects Zaka A, Singer J, Dornel E, Garetto D, Rideau D, Rafhay Q, Clerc R, Manceau JP, Degors N, Boccaccio C, Tavernier C, Jaouen H
163 - 166	Charge carrier injection and transport associated with thermally generated cracks in a 6,13-bis(triisopropylsilylethynyl) pentacene thin-film transistor Bae JH, Kim H, Horowitz G, Lee SD
167 - 176	A 2-dimensional fully analytical model for design of high voltage junction barrier Schottky (JBS) diodes Radhakrishnan R, Zhao JH
177 - 183	Analytical modeling of flicker and thermal noise in n-channel DG FinFETs Pandit S, Syamal B, Sarkar CK
184 - 188	Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs Cuerdo R, Calle F
189 - 191	Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications Huang SY, Chang TC, Chen MC, Chen SC, Lo HP, Huang HC, Gan DS, Sze SM, Tsai MJ