Solid-State Electronics

Solid-State Electronics, Vol.44, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (24 articles)

1711 - 1715	Adaptation of the pseudo-MOS transistor for the characterization of silicon-on-sapphire films Hefyene N, Cristoloveanu S, Ghibaudo G, Gentil P, Moriyasu Y, Morishita T, Matsui M, Yasujima A
1717 - 1722	Electrical fatigue response for ferroelectric ceramics under electrical cyclic load Qian R, Lukasiewicz S, Gao Q
1723 - 1732	Fast gate turn-off in a merged thyristor-like structure Gordion IM, Gribnikov ZS, Korobov VA, Mitin VV
1733 - 1741	Field emission characteristic studies of chemical vapor deposited diamond films Chen CL, Chen CS, Lue JT
1743 - 1746	A DC current stress method to improve the voltage coefficient of resistance of the polysilicon resistor in high voltage CMOS technology Chen CH, Fang YK, Kuo MH, Hsu YL, Hsu SL
1747 - 1752	Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics Malm BG, Grahn JV, Ostling M
1753 - 1764	An analytical model for the 3D-RESURF effect Ng R, Udrea F, Amaratunga G
1765 - 1769	Optoelectronic properties of CdO/Si photodetectors Ortega M, Santana G, Morales-Acevedo A
1771 - 1781	An electrostatic discharge failure mechanism in semiconductor devices, with applications to electrostatic discharge measurements using transmission line pulsing technique Lee JC, Hoque A, Croft GD, Liou JJ, Young R, Bernier JC
1783 - 1787	Comprehensive investigations of high voltage non-punch-through double gate-injection enhanced gate transistor Bai YM, Huang AQ
1789 - 1798	Thermal analysis of solid-state devices and circuits: an analytical approach Rinaldi N
1799 - 1806	A physics-based electron gate current model for fully depleted SOI MOSFETs Sheu CJ, Jang SL
1807 - 1818	Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction Zhu SY, Detavernier C, Van Meirhaeghe RL, Cardon F, Ru GP, Qu XP, Li BZ
1819 - 1824	A MOSFET gate current model with the direct tunneling mechanism Sheu CJ, Jang SL
1825 - 1831	Determination of SiO2-Si interface trap level density (D-it) by vibrating capacitor method Mizsei J
1833 - 1836	On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides Haque A, Rahman A, Chowdhury IB
1837 - 1845	Effects of high current conduction in sub-micron Ti-silicided films Gan CL, Pey KL, Chim WK, Siah SY
1847 - 1852	Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics Park JW, Mohammadi S, Pavlidis D
1853 - 1856	Resonant-tunneling-diode relaxation oscillator Chen CL, Mathews RH, Mahoney LJ, Calawa SD, Sage JP, Molvar KM, Parker CD, Maki PA
1857 - 1860	Sidegating mechanism as a function of the sidegate-to-channel spacing Prokhorov EF, Gorev NB, Kodzhespirova IF, Kovalenko YA
1861 - 1864	Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances Ortiz-Conde A, Sanchez FJG, Muci J
1865 - 1867	Similarity relation for I-V characteristics of FETs with different channel shape Dobrovolsky VN, Balucani M, Ferrari A
1869 - 1873	Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications Cao GJ, De Souza MM, Narayanan EMS
1875 - 1878	Improved ohmic contact on n-type 4H-SiC Gao Y, Tang Y, Hoshi M, Chow TP