Solid-State Electronics

Solid-State Electronics, Vol.47, No.10 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (46 articles)

1605 - 1605	12th workshop on dielectrics in microelectronics - Foreword Ghibaudo G, Vincent E
1607 - 1611	The Pr2O3/Si(001) interface studied by synchrotron radiation photo-electron spectroscopy Schmeisser D, Mussig HJ
1613 - 1616	Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition Damlencourt JF, Renault O, Samour D, Papon AM, Leroux C, Martin F, Marthon S, Semeria MN, Garros X
1617 - 1621	Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric Lime F, Oshima K, Casse M, Ghibaudo G, Cristoloveanu S, Guillaumot B, Iwai H
1623 - 1629	Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films Duenas S, Castan H, Barbolla J, Kukli K, Ritala M, Leskela M
1631 - 1635	PMNT films for integrated capacitors Fribourg-Blanc E, Cattan E, Remiens D, Defay E
1637 - 1640	Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices Perniola L, Salvo BD, Ghibaudo G, Para AF, Pananakakis G, Baron T, Lombardo S
1641 - 1644	Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory Deleruyelle D, Cluzel J, De Salvo B, Fraboulet D, Mariolle D, Buffet N, Deleonibus S
1645 - 1649	Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory Molas G, De Salvo B, Mariolle D, Ghibaudo G, Toffoli A, Buffet N, Deleonibus S
1651 - 1656	A new low voltage fast SONOS memory with high-k dielectric Gritsenko VA, Nasyrov KA, Novikov YN, Aseev AL, Yoon SY, Lee JW, Lee EH, Kim CW
1657 - 1661	New approach for the gate current source-drain partition modeling in advanced MOSFETs Romanjek K, Lime F, Ghibaudo G, Leroux C
1663 - 1668	Inelastic electron tunnelling spectroscopy in N-MOS junctions with ultra-thin gate oxide Petit C, Salace G, Vuillaume D
1669 - 1676	Temperature dependence of the structural properties of amorphous silicon oxynitride layers Abu El-Oyoun M, Inokuma T, Kurata Y, Hasegawa S
1677 - 1683	Electrical properties of Si-SiO2 interface traps and evolution with oxide thickness in MOSFET's with oxides from 2.3 to 1.2 nm thick Bauza D
1685 - 1691	A novel integrated MIS low-pass filter device Holten S, Kliem H
1693 - 1698	Modeling and design of the high performance step SOI-LIGBT power devices by partition mid-point method Chang FL, Lin MJ, Lee GY, Chen YS, Liaw CW, Cheng HC
1699 - 1705	An improved silicon-oxidation-kinetics and accurate analytic model of oxidation Wang JM, Li Y, Li RW
1707 - 1712	Modeling and extraction of gate bias-dependent parasitic source and drain resistances in MOSFETs Kim DM, Kim HC, Kim HT
1713 - 1718	Reduction of effective barrier height and low-frequency noise of Al-GaAs Schottky contacts by hydrocarbon ion beam irradiation Meskinis S, Balcaitis G, Matukas J, Palenskis V
1719 - 1727	An equivalent heterojunction-like model for polysilicon emitter bipolar transistor Jin HY, Zhang LC, Gao YZ, Ye HF
1729 - 1734	The effects of operating bias conditions on the proton tolerance of SiGeHBTs Zhang SM, Cressler JD, Niu GF, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL
1735 - 1740	A novel idea: using DTMOS to suppress FIBL effect in MOSFET with high-k gate dielectrics Wang WP, Huang R, Yang SQ, Zhang GY, Zhang X, Wang YY
1741 - 1743	The role of Ni and Au on transparent film of blue LEDs Qin ZX, Chen ZZ, Zhang HX, Ding XM, Hu XD, Yu TJ, Zhang GY
1745 - 1751	Theoretical analysis of a field emission enhanced semiconductor thermoelectric cooler Chung M, Miskovsky NM, Cutler PH, Kumar N, Patel V
1753 - 1756	InGaN quantum dot photodetectors Ji LW, Su YK, Chang SJ, Liu SH, Wang CK, Tsai ST, Fang TH, Wu LW, Xue QK
1757 - 1761	Influence of gate oxide thickness on Sc2O3/GaN MOSFETs Cho H, Lee KP, Gila BP, Abernathy CR, Pearton SJ, Ren F
1763 - 1767	Investigation of epitaxial lift-off the InGaAs p-i-n photodiodes to the AlAs/GaAs distributed Bragg reflectors Yang CD, Ho CL, Wu MY, Su JY, Ho WJ, Wu MC
1769 - 1774	Sub-nanosecond semiconductor opening switches based on 4H-SiC p(+)p(o)n(+)-diodes Grekhov IV, Ivanov PA, Khristyuk DV, Konstantinov AO, Korotkov SV, Samsonova TP
1775 - 1780	Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum Peng YH, Chen CC, Kuan CH, Cheng HH
1781 - 1786	Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A
1787 - 1791	Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact Lin CS, Yeh RH, Li IX, Hong JW
1793 - 1798	Electrical properties of ultrathin TiO2 films on Si1-yCy heterolayers Dalapati GK, Chatterjee S, Samanta SK, Nandi SK, Bose PK, Varma S, Patil S, Maiti CK
1799 - 1803	Oxide via etching in a magnetically enhanced CHF3/CF4/Ar plasma Kim B, Kwon SK
1805 - 1809	Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering Lai FI, Hsueh TH, Chang YH, Shu WC, Lai LH, Kuo HC, Wang SC
1811 - 1816	On laterally spreading of space-charge-region in planar metal-semiconductor-metal structures Khunkhao S, Yasumura Y, Kitagawa K, Masui T, Sato K
1817 - 1823	Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading Ebong A, Arthur S, Downey E, Cao XA, LeBoeuf S, Merfeld DW
1825 - 1828	High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap Tsai JY, Lu TC, Wang SC
1829 - 1833	An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs Zhang ZK, Zhang SD, Feng CG, Chan MS
1835 - 1841	GaAs and AlGaAs photodiodes for ionizing radiation detectors Andreev VM, Milanova MM, Khvostikov VP
1843 - 1846	GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer Chen LC, Hsu CY, Lan WH, Teng SY
1847 - 1854	The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes Altindal S, Karadeniz S, Tugluoglu N, Tataroglu A
1855 - 1858	Depletion-mode n-channel organic field-effect transistors based on NTCDA Zhu M, Liang GR, Cui TH, Varahramyan K
1859 - 1862	Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Pearton SJ, Ren F
1863 - 1867	Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors Tian Y, Chua SJ, Wang H
1869 - 1874	White noise due to photocurrents in planar MSM structures on low-resistivity Si Khunkhao S, Niemcharoen S, Supadech S, Sato K
1875 - 1879	Liner schemes of the aluminum damascene interconnection for sub-0.2 mu m line pitch metallization Kim SD, Park DG