Solid-State Electronics

Solid-State Electronics, Vol.54, No.11 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (42 articles)

1239 - 1245	Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs Santillan-Quinonez GF, Champac V, Murphy RS
1246 - 1256	Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction Rodriguez MA, Claudio A, Cotorogea M, Gonzalez LH, Aguayo J
1257 - 1262	Self-consistent 1-D Schrodinger-Poisson solver for III-V heterostructures accounting for conduction band non-parabolicity Wang LQ, Asbeck PM, Taur Y
1263 - 1268	Improving the cell characteristics using arch-active profile in NAND flash memory having 60 nm design-rule Kang D, Shin H
1269 - 1272	Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes Alonso JL, Ferrer JC, Salinas-Castillo A, Mallavia R, de Avila SF
1273 - 1277	Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Barrett C, Lederer D, Redmond G, Xiong W, Colinge JP, Quinn AJ
1278 - 1283	On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation Pavel AA, Khan MR, Islam NE
1284 - 1290	Impact of transparent conductive oxide on the admittance of thin film solar cells Principato F, Cannella G, Lombardo S, Foti M
1291 - 1294	Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Tripathi N, Jindal V, Shahedipour-Sandvik F, Rajan S, Vert A
1295 - 1299	Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Ghosh B, Liu H, Winstead B, Foisy MC, Banerjee SK
1300 - 1303	A new analytical high frequency noise parameter model for AlGaN/GaN HEMT Cheng XX, Wang Y
1304 - 1311	Selection of gate length and gate bias to make nanoscale metal-oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation Yang PZ, Lau WS, Lai SW, Lo VL, Siah SY, Chan L
1312 - 1318	Accurate small signal modeling and extraction of silicon MOSFET for RF IC application Tang Y, Zhang L, Wang Y
1319 - 1325	Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances Gerardi C, Tripiciano E, Cina G, Lombardo S, Garozzo C, Corso D, Betro G, Pace C, Crupi F
1326 - 1331	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils Moon J, Kim YH, Park DJ, Chung CH, Kang SY, Lee JH
1332 - 1338	A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Fregonese S, Maneux C, Zimmer T
1339 - 1342	High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator Dong ZH, Wang JY, Wen CP, Gong DN, Li Y, Yu M, Hao YL, Xu FJ, Shen B, Wang YY
1343 - 1348	Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors Driad R, Losch R, Benkhelifa F, Kuri M, Rosenzweig J
1349 - 1358	Scaling projections for Sb-based p-channel FETs Ancona MG, Bennett BR, Boos JB
1359 - 1366	Modeling local electrical fluctuations in 45 nm heavily pocket-implanted bulk MOSFET Mezzomo CM, Bajolet A, Cathignol A, Josse E, Ghibaudo G
1367 - 1371	AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study Hayashi Y, Sugiura S, Kishimoto S, Mizutani T
1372 - 1380	2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET Schwarz M, Weidemann M, Kloes A, Iniguez B
1381 - 1383	Infrared light emitting device with two color emission Das NC
1384 - 1391	A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Cho M, Degraeve R, Roussel P, Govoreanu B, Kaczer B, Zahid MB, Simoen E, Arreghini A, Jurczak M, Van Houdt J, Groeseneken G
1392 - 1397	Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation Kamada Y, Fujita S, Hiramatsu T, Matsuda T, Furuta M, Hirao T
1398 - 1407	Impact of circuit assist methods on margin and performance in 6T SRAM Mann RW, Wang JJ, Nalam S, Khanna S, Braceras G, Pilo H, Calhoun BH
1408 - 1415	Analytical current equation for short channel SOI multigate FETs including 3D effects Kloes A, Weidemann M, Schwarz M
1416 - 1420	The effect of photodiode shape on charge transfer in CMOS image sensors Shin B, Park S, Shin H
1421 - 1429	Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET Sarkar S, Roy AS, Mahapatra S
1430 - 1433	Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors Arulkumaran S, Ng GI, Lee CH, Liu ZH, Radhakrishnan K, Dharmarasu N, Sun Z
1434 - 1437	Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Lancry O, Pichonat E, Rehault J, Moreau M, Aubry R, Gaquiere C
1438 - 1443	Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED Tu SH, Chen JC, Hwu FS, Sheu GJ, Lin FL, Kuo SY, Chang JY, Lee CC
1444 - 1446	Comparison and improvement of two core compact models for double-gate MOSFETs Zhou XY, Zhou ZZ, Zhang JA, Zhang LN, Ma CY, He J, Zhang X
1447 - 1450	Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films Kar JP, Kim S, Shin B, Park KI, Ahn KJ, Lee W, Cho JH, Myoung JM
1451 - 1456	Analysis of transient behavior of AlGaN/GaN MOSHFET Hayashi Y, Kishimoto S, Mizutani T
1457 - 1462	A new vertical MOSFET "Vertical Logic Circuit (VLC) MOSFET" suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Sakui K, Endoh T
1463 - 1469	An analytical model for square GAA MOSFETs including quantum effects Moreno E, Roldan JB, Ruiz FG, Barrera D, Godoy A, Gamiz F
1470 - 1473	Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR
1474 - 1478	Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks Lu CC, Chang-Liao KS, Tsao CH, Wang TK
1479 - 1484	Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes Jander A, Dhagat P
1485 - 1487	Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors Wang MC, Tsao SW, Chang TC, Lin YP, Liu PT, Chen JR
1488 - 1491	Bipolar magnetotransistor sensor with digital output Tikhonov RD