Solid-State Electronics

Solid-State Electronics, Vol.53, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

251 - 255	The charge transport mechanism in silicon nitride: Multi-phonon trap ionization Vishnyakov AV, Novikov YN, Gritsenko VA, Nasyrov KA
256 - 265	Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs Rao R, Katti G, Havaldar DS, DasGupta N, DasGupta A
266 - 270	A flexible organic thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene and a methyl-siloxane-based dielectric Kwon JH, Shin SI, Choi J, Chung MH, Kang H, Ju BK
271 - 275	Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (100) and (110) silicon surfaces Ashraf MK, Khan AI, Haque A
276 - 278	Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure Rao F, Song ZT, Wu LC, Gong YF, Feng SL, Chen B
279 - 284	Charge trapping behavior of SiO2-Anodic Al2O3-SiO2 gate dielectrics for nonvolatile memory applications Huang CH, Li EJ, Chang WJ, Wang NF, Hung CI, Houng MP
285 - 291	A comprehensive model of frequency dispersion in 4H-SiC MESFET Lu HL, Zhang YM, Zhang YM, Zhang T
292 - 296	Gated tunnel diode in oscillator applications with high frequency tuning Wernersson LE, Arlelid M, Egard M, Lind E
297 - 307	Analytical modeling and numerical simulations of the thermal behavior of trench-isolated bipolar transistors Marano I, d'Alessandro V, Rinaldi N
308 - 313	Performance evaluation of sphere-form cathodes in the fabrication of optoelectronic In2O3SnO2 PET Pa PS
314 - 319	Measurement of the MOSFET drain current variation under high gate voltage Terada K, Chagawa T, Xiang JY, Tsuji K, Tsunomura T, Nishida A
320 - 323	Visualization of local gate control in a ZnO inter-nanowire junction device Lim JH, Ji HJ, Jung GE, Chung KH, Kim GT, Ha JS, Park JY, Kahng SJ
324 - 328	Negative capacitance in light-emitting devices Zhu CY, Feng LF, Wang CD, Cong HX, Zhang GY, Yang ZJ, Chen ZZ
329 - 331	Zinc tin oxide based driver for highly transparent active matrix OLED displays Gorrn P, Ghaffari F, Riedl T, Kowalsky W
332 - 335	An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG
336 - 340	Optical properties studies in InGaN/GaN multiple-quantum well Zhu LH, Liu BL
341 - 348	Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT Huque MA, Eliza SA, Rahman T, Huq HF, Islam SK
349 - 354	Discussions and extension of van Vliet's noise model for high speed bipolar transistors Xia KJ, Niu GF
355 - 358	Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation Sen B, Wong H, Yang BL, Chu PK, Kakushima K, Iwai H
359 - 363	Experimental characterization of the subthreshold leakage current in triple-gate FinFETs Tsormpatzoglou A, Dimitriadis CA, Mouis M, Ghibaudo G, Collaert N
364 - 370	Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators Vexler MI, Kuligk A, Meinerzhagen B
371 - 375	Formation of polycrystalline-Si thin-film-transistors with a retrograde channel doping profile Juang MH, Cheng SH, Jang SL
376 - 382	A nonparabolicity model compared to tight-binding: The case of square silicon quantum wires Esposito A, Luisier M, Frey M, Schenk A
383 - 388	Design and numerical analysis of a polarization-insensitive quantum well optoelectronic integrated amplifier-switch Darabi E, Ahmadi V
389 - 391	Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM Ryu SW, Han JW, Kim CJ, Kim S, Choi YK
392 - 396	Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack Rochette F, Casse M, Mouis M, Haziot A, Pioger T, Ghibaudo G, Boulanger F
397 - 399	Pure red organic light-emitting diode based on a europium complex Xue Q, Chen P, Lu JH, Xie GH, Hou JY, Liu SY, Zhao Y, Zhang LY, Li B