Solid-State Electronics

Solid-State Electronics, Vol.49, No.5 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

673 - 673	Special issue Section-ULIS 2004 - Foreword De Meyer K, Collaert N
674 - 683	Teaching cells to dance: the impact of transistor miniaturization on the manipulation of populations of living cells Abonnenc M, Altomare L, Baruffa M, Ferrarini V, Guerrieri R, Iafelice B, Leonardi A, Manaresi N, Medoro G, Romani A, Tartagni M, Vulto P
684 - 694	Sub-band structure engineering for advanced CMOS channels Takagi S, Mizuno T, Tezuka T, Sugiyama N, Nakaharai S, Numata T, Koga J, Uchida K
695 - 701	Scaling CMOS: Finding the gate stack with the lowest leakage current Kauerauf T, Govoreanu B, Degraeve R, Groeseneken G, Maes H
702 - 707	Tunneling 1/f(gamma) noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs Simoen E, Mercha A, Pantisano L, Claeys C, Young E
708 - 715	On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOICMOS process Kilchytska V, Levacq D, Vancaillie L, Flandre D
716 - 720	Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications Specht M, Reisinger H, Hofmann F, Schulz T, Landgraf E, Luyken RJ, Rosner W, Grieb M, Risch L
721 - 726	Characterization of the effective mobility by split C(V) technique in sub 0.1 mu m Si and SiGePMOSFETs Romanjek K, Andrieu F, Ernst T, Ghibaudo G
727 - 732	An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation Palestri P, Eminente S, Esseni D, Fiegna C, Sangiorgi E, Selmi L
733 - 739	Impact of scattering in'atomistic' device simulations Alexander C, Brown AR, Watling JR, Asenov A
740 - 746	Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells Cheng B, Roy S, Roy G, Adamu-Lema F, Asenov A
747 - 754	Simulation of interconnect structures using ghost-field solving methods Schoenmaker W, Meuris P, Janssens E, Verschaeve M
755 - 762	Beyond the conventional transistor Wong HSP
763 - 768	Shift and ratio method revisited: extraction of the fin width in multi-gate devices Collaert N, Dixit A, Anil KG, Rooyackers R, Veloso A, De Meyer K
769 - 773	Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation Mandelis A, Rabago F
774 - 778	Characterization of Pd/Ni/Au ohmic contacts on p-GaN Cho HK, Hossain T, Bae JW, Adesida I
779 - 789	Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation Wiatr M, Seegebrecht P
790 - 794	Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition Ye PD, Wilk DG, Yang B, Chu SNG, Ng KK, Bude J
795 - 801	Empirical model of data retention degradation in stacked-gate flash EEPROM cells with new interpoly dielectric of an Oxide-Nitride-Oxide-Nitride (ONON) layer Kim JH, Choi JB
802 - 807	AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy Haffouz S, Tang H, Bardwell JA, Hsu EM, Webb JB, Rolfe S
808 - 812	An analytical threshold voltage roll-off equation for MOSFET by using effective-doping Shih CH, Chen YM, Lien CS
813 - 817	Space charge limited current conduction in ZincPhthalocyanine (ZnPc) thin films Senthilarasu S, Sathyamoorthy R, Lalitha S, Subbarayan A
818 - 824	A test circuit for measuring MOSFET threshold voltage mismatch Terada K, Eimitsu M, Fukeda K
825 - 833	Analysis of variation in leakage currents of Lanthana thin films Kim Y, Ohmi S, Tsutsui K, Iwai H
834 - 837	Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor Moon JW, Choi YK, Chung SK
838 - 846	Enhanced passivation characteristics in OLEDs by modification of aluminum cathodes using Ar+ ion beam Jeong SM, Koo WH, Choi SH, Balk HK
847 - 852	Space-charge-limited currents in GaN Schottky diodes Shen XM, Zhao DG, Liu ZS, Hu ZF, Yang H, Liang JW
853 - 859	Printed polymeric passive RC filters and degradation characteristics Cui TH, Liu Y, Chen B, Zhu M, Varahramyan K
860 - 864	Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect Xia TS, Register LF, Banerjee SK