Solid-State Electronics

Solid-State Electronics, Vol.49, No.7 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (30 articles)

1055 - 1070	Diamond semiconductor technology for RF device applications Gurbuz Y, Esame O, Tekin I, Kang WP, Davidson JL
1071 - 1076	Improved modeling and parameter-extraction procedure emphasizing on extrinsic inductances and base-collector capacitances of collector-up HBTs Tseng HC, Chou JH
1077 - 1080	GaAs MOS capacitors with photo-CVD SiO2 insulator layers Liu CH, Lin TK, Chang SJ
1081 - 1085	Study of 4H-SiC trench MOSFET structures Chen L, Guy OJ, Jennings MR, Igic P, Wilks SP, Mawby PA
1086 - 1089	Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET Jankovic N, Pesic T
1090 - 1097	Electron transport in thin SOI, strained-SOI and GeOI MOSFET by Monte-Carlo simulation Barraud S, Clavelier L, Ernst T
1098 - 1106	Achieving accuracy in modeling the temperature coefficient of threshold voltage in MOS transistors with uniform and horizontally nonuniform channel doping d'Alessandro V, Spirito P
1107 - 1111	A 3.5 in. QVGA poly-Si TFT-LCD with integrated driver. including new 6-bit DAC Lim KM, Lee KE, Yoo JS, Yoon JM, Baek MK, Yoo JS, Jung YS, Park J, Lee SW, Kang HC, Kim CD, Chung IJ
1112 - 1117	Ground and first excited states observed in silicon nanocrystals by photocurrent technique De la Torre J, Souifi A, Poncet A, Bremond G, Guillot G, Garrido B, Morante JR
1118 - 1126	Physics-based model of quantum-mechanical wave function penetration into thin dielectric films for evaluating modern MOS capacitors Nakamori Y, Moriguchi K, Komiya K, Omura Y
1127 - 1134	Mixed-mode temperature modeling of full-chip based on individual non-isothermal device operations Akturk A, Goldsman N, Parker L, Metze G
1135 - 1139	Frequency dependence of junction capacitance of GaN p-i-n UV detectors Kang Y, Xu YH, Zhao DG, Fang JX
1140 - 1152	Fowler-Nordheim high electric field stress of power VDMOSFETs Ristic GS, Pejovic MM, Jaksic AB
1153 - 1157	Vertical chip of GaN-based blue light-emitting diode Kim SJ
1158 - 1162	ZnO p-n junctions produced by a new route Hazra SK, Basu S
1163 - 1167	Effect of electron beam irradiation on polypropylene films-dielectric and FT-IR studies Abdel-Hamid HM
1168 - 1171	Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si Lampin E, Ortiz CJ, Cowern NEB, Colombeau B, Cristiano F
1172 - 1178	Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/receiving designs Lee HC, Liu CK
1179 - 1184	On the threshold voltage of metal-oxide-semiconductor field-effect transistors Shi XJ, Wong M
1185 - 1191	A new multi-valued current-mode adder based on negative-differential resistance using ULP diodes Hassoune H, Drummond A, Gaudissart A, Bol D, Levacq D, Flandre D, Legat JD
1192 - 1197	Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution Tyaginov SE, Vexler MI, Shulekin AF, Grekhov IV
1198 - 1205	From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation Shalchian M, Grisolia J, Ben Assayag G, Coffin H, Atarodi SM, Claverie A
1206 - 1212	A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region Aggarwal SK, Gupta R, Haldar S, Gupta M, Gupta RS
1213 - 1216	Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN Reddy VR, Reddy NR, Choi CJ
1217 - 1222	Transient blocking characteristics of highly efficient junction isolations based on standard CMOS process Starke TKH, Igic PM
1223 - 1227	Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC Yang BL, Lin LM, Lo HB, Lai PT
1228 - 1232	High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes Levinshtein ME, Ivanov PA, Boltovets MS, Krivutsa VA, Palmour JW, Das MK, Hull BA
1233 - 1240	Performance of lateral SOI-MOS static induction transistors for RF power applications Yano K, Mitsumori A, Furuya M, Kasuga M
1241 - 1247	Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations Chan HY, Srinivasan M, Benistant F, Jin HM, Chan L
1248 - 1250	Current-crowding effect in multiple cantilever channel MOSFET Dey S, Joshi S, Banerjee SK