Solid-State Electronics

Solid-State Electronics, Vol.53, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

815 - 815	PAPERS SELECTED FROM THE 4TH INTERNATIONAL SiGe TECHNOLOGY AND DEVICE MEETING (ISTDM 2008) Foreword Paul DJ
816 - 823	Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties Xie JQ, Tolle J, D'Costa VR, Weng C, Chizmeshya AVG, Menendez J, Kouvetakis J
824 - 827	Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe Yamamoto Y, Kopke K, Weidner G, Tillack B
828 - 832	High temperature antimony ion implantation in strained silicon-on-insulator Buca D, Heiermann W, Trinkaus H, Hollander B, Breuer U, Mantl S
833 - 836	Epitaxial growth of Gd2O3 on surfactant-mediated grown Ge films on Si(001) substrates Wietler TF, Laha A, Bugiel E, Czernohorsky M, Dargis R, Fissel A, Osten HJ
837 - 840	Microstructures in directly bonded Si substrates Ohara Y, Ueda T, Sakai A, Nakatsuka O, Ogawa M, Zaima S, Toyoda E, Isogai H, Senda T, Izunome K, Tajiri H, Sakata O, Kimura S, Sakata T, Mori H
841 - 849	Optical and electrical evaluations of SiGe layers on insulator fabricated using Ge condensation by dry oxidation Wang D, Nakashima H
850 - 857	Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structures Abbadie A, Allibert F, Brunier F
858 - 861	New method to calibrate the pattern dependency of selective epitaxy of SiGe layers Kolahdouz M, Maresca L, Ostling M, Riley D, Wise R, Radamson HH
862 - 864	Photoluminescence study of nanocrystalline-Si(Ge) embedded in mesoporous silica Adnane B, Lai YF, Shieh JM, Holtz PO, Ni WX
865 - 868	Si and SiGe faceting during selective epitaxy Pribat C, Servanton G, Depoyan L, Dutartre D
869 - 872	Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTs Oda K, Miura M, Shimamoto H, Washio K
873 - 876	A selective epitaxy collector module for high-speed Si/SiGe:C HBTs Geynet B, Chevalier P, Brossard F, Vandelle B, Schwartzmann T, Buczko M, Avenier G, Dutartre D, Dambrine G, Danneville F, Chantre A
877 - 879	Heavy B atomic-layer doping characteristics in Si epitaxial growth on B adsorbed Si(100) by ultraclean low-pressure CVD system Tanno H, Sakuraba M, Tillack B, Murota J
880 - 887	3D TCAD simulations of strained Si CMOS devices with silicon-based alloy stressors and stressed CESL Wang WC, Chang ST, Huang J, Kuang SJ
888 - 891	Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device Fu CH, Chang-Liao KS, Tsai KH, Wang TK, Lee YJ
892 - 896	The effects of STI induced mechanical strain on GIDL current in Hf-based and SiON MOSFETs Cheng CY, Fang YK, Liao JC, Wang TJ, Hou YT, Hsu PF, Lin KC, Huang KT, Lee TL, Liang MS
897 - 900	Investigation of interface characteristics in strained-Si nMOSFETs Kuo CW, Wu SL, Chang SJ, Lin HY, Wang YP, Hung SC
901 - 904	Low-frequency noise in buried-channel SiGe n-MODFETs Madan A, Cressler JD, Koester SJ
905 - 908	DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique Lin HY, Wu SL, Chang SJ, Kuo CW, Wang YP, Hung SC
909 - 911	Spectral responsivity of fast Ge photodetectors on SOI Kaschel M, Oehme M, Kirfel O, Kasper E
912 - 915	Improvement in negative differential conductance characteristics of hole resonant-tunneling diodes with high Ge fraction Si/strained Si1-xGex/Si(100) heterostructure Seo T, Takahashi K, Sakuraba M, Murota J
916 - 919	A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique Huang JC, Lai KS, Hsu KYJ