| 209 - 215 |
Silicon Surfaces Treated by CF4, CF4/H-2, and CF4/O-2 RF Plasmas - Study by in-Situ Fourier-Transform Infrared Ellipsometry
Shirafuji T, Stoffels WW, Moriguchi H, Tachibana K |
| 216 - 222 |
Real-Time Diagnostics of II-VI Molecular-Beam Epitaxy by Spectral Ellipsometry
Duncan WM, Bevan MJ, Shih HD |
| 223 - 229 |
Study of Tioxny Thin-Film Selective Surfaces Produced by Ion-Assisted Deposition
Bittar A, Cochrane D, Caughley S, Vickeridge I |
| 230 - 237 |
2-Dimensional Imaging of Cf2 Density by Laser-Induced Fluorescence in CF4 Etching Plasmas in the Gaseous Electronics Conference Reference Cell
Mcmillin BK, Zachariah MR |
| 238 - 242 |
Sputtered Gold-Films for Surface-Enhanced Raman-Scattering
Maya L, Vallet CE, Lee YH |
| 243 - 247 |
Sputtering Investigation of Boron-Nitride with Secondary-Ion and Secondary Neutral Mass-Spectrometry
Zhang J, Bhattacharjee S, Shutthanandan V, Ray PK |
| 248 - 252 |
Studies of Reactive Sputtering of Multiphase Chromium Nitride
Nyberg T, Skytt P, Galnander B, Nender C, Nordgren J, Berg S |
| 253 - 257 |
Transmission Electron-Microscopy of the Sequence of Phase-Formation in the Interfacial Solid-Phase Reactions in Ta/Si Systems
Noya A, Takeyama M, Sasaki K, Aoyagi E, Hiraga K |
| 258 - 264 |
Experimental-Study on the Scaling Law of the Outgassing Rate with a Pumping Parameter
Akaishi K, Kubota Y, Motojima O, Nakasuga M, Funato Y, Mushiaki M |
| 265 - 274 |
Adsorption-Isotherms of He and H-2 at Liquid He Temperatures
Wallen E |
| 275 - 278 |
Crystallographic and Microstructural Studies of BaTiO3 Thin-Films Grown on SrTiO3 by Laser Molecular-Beam Epitaxy
Cui DF, Wang HS, Chen ZH, Zhou YL, Lu HB, Yang GZ, Ma K, Chen H, Li L, Liu W, Zhang Y |
| 279 - 283 |
Comparison of Low-Temperature Oxidation of Crystalline Si and B with A-Si-B Alloy - An X-Ray Photoelectron-Spectroscopy Study
Yang GR, Zhao YP, Abburi M, Dabral S, Tong BY |
| 284 - 291 |
Combined X-Ray Photoelectron Auger-Electron Spectroscopy Glancing Angle X-Ray-Diffraction Extended X-Ray-Absorption Fine-Structure Investigation of Tibxny Coatings
Baker MA, Mollart TP, Gibson PN, Gissler W |
| 292 - 293 |
Sample Charging of Insulators with Rough Surfaces During Auger-Electron Spectroscopy Analysis
Park JW |
| 294 - 297 |
X-Ray-Absorption and Auger-Electron Spectroscopy Studies of the Quality of Diamond Thin-Films Grown by the Oxy-Acetylene Flame Method
Gutierrez A, Lopez MF, Garcia I, Vazquez A |
| 298 - 306 |
Effect of Ion-Bombardment in Very-High Frequency Glow-Discharge on Growth and Properties of Sihx Films
Kosarev AI, Smimov AS, Abramov AS, Vinogradov AJ, Ustavschikov AY, Shutov MV |
| 307 - 312 |
Characterization of Helicon Wave Plasma for a Thin-Film Deposition Process
Kim SH, Kim IH, Kim KS |
| 313 - 319 |
Numerical Study of the Effects of Reactor Geometry on a Chlorine Plasma Helicon Etch Reactor
Font GI, Boyd ID |
| 320 - 331 |
Dual-Plasma Reactor for Low-Temperature Deposition of Wide Band-Gap Silicon Alloys
Etemadi R, Godet C, Perrin J, Drevillon B, Huc J, Parey JY, Rostaing JC, Coeuret F |
| 332 - 339 |
Synthesis of Epitaxial-Films of Fe3O4 and Alpha-Fe2O3 with Various Low-Index Orientations by Oxygen-Plasma-Assisted Molecular-Beam Epitaxy
Gao Y, Kim YJ, Chambers SA, Bai G |
| 340 - 344 |
Quenching of Electron-Temperature and Electron-Density in Ionized Physical Vapor-Deposition
Dickson M, Qian F, Hopwood J |
| 345 - 352 |
Strain Gradients and Normal Stresses in Textured Mo Thin-Films
Malhotra SG, Rek ZU, Yalisove SM, Bilello JC |
| 353 - 364 |
Study of Ultrathin Polyamide-6,6 Films on Clean Copper and Platinum
Charlier J, Detalle V, Valin F, Bureau C, Lecayon G |
| 365 - 368 |
High-Pressure Flow Reactor Designed for an Ultrahigh-Vacuum Analysis System
Sellmer C, Gaussmann A, Kruse N, Prins R |
| 369 - 373 |
Preparation of Low-Temperature Fluorinated Oxides by Anodic-Oxidation in Dilute Hydrofluosilicic Acid (H2Sif6) Solution
Jen MJ, Hwu JG |
| 374 - 376 |
New Aspects of K Promoted Nitridation of the InP(100) Surface
Huang L, Zhao TX, Duan YW, Wang XP, Lu ED, Xu PS, Hsu CC |
| 377 - 389 |
Infrared Study of Si-Rich Silicon-Oxide Films Deposited by Plasma-Enhanced Chemical-Vapor-Deposition
Sassella A, Borghesi A, Corni F, Monelli A, Ottaviani G, Tonini R, Pivac B, Bacchetta M, Zanotti L |
| 390 - 393 |
Characteristics of Hydrogenated Aluminum Nitride Films Prepared by Radio-Frequency Reactive Sputtering and Their Application to Surface-Acoustic-Wave Devices
Yong YJ, Lee JY |
| 394 - 401 |
A New Silicon Phosphide, Si12P5 - Formation Conditions, Structure, and Properties
Carlsson JR, Madsen LD, Johansson MP, Hultman L, Li XH, Hentzell HT, Wallenberg LR |
| 402 - 407 |
Interaction of Hydrogen Plasmas with Hydrocarbon Films, Investigated by Infrared-Spectroscopy Using an Optical Cavity Substrate
Vonkeudell A, Jacob W |
| 408 - 414 |
Interface Formation Between Hydrogen-Terminated Si(111) and Amorphous Hydrogenated Carbon (A-C-H)
Schafer J, Ristein J, Miyazaki S, Ley L |
| 415 - 420 |
Thermal-Stability of Cu/W/Si Contact Systems Using Layers of Cu(111) and W(110) Preferred Orientations
Takeyama M, Noya A, Fukuda T |
| 421 - 427 |
Microstructure and Corrosion-Resistance of Plasma Source Ion Nitrided Austenitic Stainless-Steel
Lei MK, Zhang ZL |
| 428 - 430 |
Work Function Determination of Zinc-Oxide Films
Sundaram KB, Khan A |
| 431 - 432 |
Room-Temperature Preparation Method of Polycrystalline CuInSe2 Thin-Films
Joseph CM, Menon CS |
| 433 - 435 |
Stability of Rapidly Annealed Reactive Sputter-Deposited Nitrided Silicon Dioxide
Eftekhari G |
| 436 - 438 |
Thermal-Conductivity Issues in the Construction of Manipulators for Ultrahigh-Vacuum Systems
Rusu C, Yates JT |
| 439 - 442 |
Surface-Reactions of Ge Chemical-Vapor-Deposition Using Diethylgermane
Ishii H, Takahashi Y |
