633 - 644 |
Beyond beta-C3N4-fullerene-like carbon nitride: A promising coating material Neidhardt J, Hultman L |
645 - 650 |
CO-D2O coadlayers on Pt(111): Vibrational studies at low coverages Hu YH, Norton PR, Griffiths K |
651 - 658 |
Effects of substrate bias and nitrogen flow ratio on the resistivity and crystal structure of reactively sputtered ZrNx films at elevated temperature Jeng JS, Wang SH, Chen JS |
659 - 665 |
Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers Stafford L, Lim WT, Pearton SJ, Chicoine M, Gujrathi S, Schiettekatte F, Kravchenko II |
666 - 674 |
Role of energy in low-temperature high-rate formation of hydrophilic TiO2 thin films using pulsed magnetron sputtering Musil J, Sicha J, Herman D, Cerstvy R |
675 - 679 |
Influence of electron irradiation and heating on secondary electron yields from non-evaporable getter films observed with in situ x-ray photoelectron spectroscopy Nishiwaki M, Kato S |
680 - 685 |
Atomic simulation of SiC etching by energetic SiF3 Gou F, Meng CL, Chen LZ, Qian Q |
686 - 691 |
Thermally regulated valve for minute flows Nguyen H, Bejhed J, Kohler J, Thornell G |
692 - 700 |
Fabrication of long-range surface plasmon-polariton waveguides in lithium niobate on silicon Mattiussi G, Lahoud N, Charbonneau R, Berini P |
701 - 705 |
Characterizations of InN films on Si(111) substrate grown by metal-organic chemical vapor deposition with a predeposited In layer and a two-step growth method Chang KJ, Chang JY, Chen MC, Lahn SM, Kao CJ, Li ZY, Uen WY, Chi GC |
706 - 710 |
Sheet resistance and crystallinity of Ga- and Al-implanted zinc oxide thin films with postannealing Matsuda T, Furuta M, Hiramatsu T, Furuta H, Hirao T |
711 - 720 |
Oxidation of arc-evaporated Al1-xCrxN coatings Reiter AE, Mitterer C, Sartory B |
721 - 725 |
Effect of ambient pressure and nickel contamination on the dimer-dangling-bond surface state of Si(001)2 X 1 Kolditz B, Roos KR |
726 - 730 |
Production of energetic ions in plasma by ambipolar fields: Application to etching Park W, Tolmachev YN, Volynets VN, Pashkovskiy VG |
731 - 735 |
Resonances in electron stimulated desorption yield of cesium atoms from germanium monolayer-covered tungsten Ageev VN, Kuznetsov YA, Madey TE |
736 - 745 |
Hydrogen and thermal deoxidations of InSb and GaSb substrates for molecular beam epitaxial growth Weiss E, Klin O, Grossman S, Greenberg S, Klipstein PC, Akhvlediani R, Tessler R, Edrei R, Hoffman A |
746 - 750 |
Removal of carbon deposits in narrow gaps by oxygen plasmas at low pressure Ferreira JA, Tabares FL, Tafalla D |
751 - 757 |
Microarea analysis of iron and phosphorus by resonance photoionization sputtered neutral mass spectrometry Shichi H, Osabe S, Sugaya M, Kanehori K, Kakibayashi H, Mitsui Y |
758 - 762 |
Efficient numerical solution of the Clausing problem Mohan A, Tompson RV, Loyalka SK |
763 - 768 |
Investigation of vacuum system requirements for a 5 km baseline gravitational-wave detector Sunil S, Blair DG |
769 - 774 |
Improved understanding of an electron beam charge compensation method for magnetic sector secondary ion mass spectrometer analysis of insulators Zhu Z, Gu C, Stevie FA, Griffis DP |
775 - 780 |
Investigation of atomic-layer-deposited ruthenium nanocrystal growth on SiO2 and Al2O3 films Zhang M, Chen W, Ding SJ, Wang XP, Zhang DW, Wang LK |
781 - 790 |
Performance and analysis of an electron cyclotron resonance plasma cathode Hidaka Y, Foster JE, Getty WD, Gilgenbach RM, Lau YY |
791 - 801 |
Vacuum systems for the ILC helical undulator Malyshev OB, Scott DJ, Bailey IR, Barber DP, Baynham E, Bradshaw T, Brummitt A, Carr S, Clarke JA, Cooke P, Dainton JB, Ivanyushenkov Y, Malysheva LI, Moortgat-Pick GA, Rochford J |
802 - 811 |
Impact of etching kinetics on the roughening of thermal SiO2 and low-k dielectric coral films in fluorocarbon plasmas Yin YP, Sawin HH |
812 - 815 |
Sublimation behavior of SiO2 from low- and high-index silicon surfaces Moore JC, Skrobiszewski JL, Baski AA |
816 - 823 |
TM01-mode microwave propagation property analysis for plasmas with disk-plate windows by a finite-difference time-domain method Okamura Y, Yamamoto Y, Fujita K, Miyoshi T, Teramoto K, Kawaguchi H, Kagami S, Furukawa M |
824 - 830 |
Determination of the sticking probability of a Zr-V-Fe nonevaporable getter strip Day C, Luo X, Conte A, Bonucci A, Manini P |
831 - 836 |
Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition Kurapov D, Reiss J, Trinh DH, Hultman L, Schneider JM |
837 - 842 |
Effects of bias on surface properties of TiN films fabricated by hollow cathode discharge Jiang HF, Tian XB, Yang SQ, Fu RKY, Chu PK |
843 - 849 |
Oxygen plasma treatment and deposition of CNx on a fluorinated polymer matrix composite for improved erosion resistance Muratore C, Korenyi-Both A, Bultman JE, Waite AR, Jones JG, Storage TM, Voevodin AA |
850 - 856 |
Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G |
857 - 861 |
a-plane MgxZn1-xO films deposited on r-sapphire and its surface acoustic wave characteristics Chen Y, Saraf G, Lu YC, Wielunski LS, Siegrist T |
864 - 864 |
Papers from the 53rd international symposium of AVS - Preface Lucovsky G |
866 - 871 |
Surface and depth profile investigation of a phosphorylcholine-based contact lens using time of flight secondary ion mass spectrometry Braun RM, Ingham SJ, Harmon PS, Hook DJ |
872 - 877 |
Interfacial interactions of poly(ether ketone ketone) polymer coatings, onto oxide-free phosphate films on an aluminum surface Asunskis AL, Sherwood PMA |
878 - 885 |
Application of multivariate statistical analysis methods for improved time-of-flight secondary ion mass spectrometry depth profiling of buried interfaces and particulate Lloyd KG |
886 - 892 |
Fundamental study of erucamide used as a slip agent Chen J, Li J, Hu T, Walther B |
893 - 902 |
Surface potential measurement of human hair using Kelvin probe microscopy Lodge RA, Bhushan B |
903 - 907 |
Large-area pulsed-laser deposition of dielectric and ferroelectric thin films Sakai S, Takahashi M, Motohashi K, Yamaguchi Y, Yui N, Kobayashi T |
908 - 911 |
Ordered Au(111) layers on Si(111) Silva A, Pedersen K, Diekhoner L, Morgen P, Li ZS |
912 - 916 |
Study of photocatalytic activity of TiO2 thin films prepared in various Ar/O-2 ratio and sputtering gas pressure Biswas S, Prabakar K, Takahashi T, Nakashima T, Kubota Y, Fujishima A |
917 - 921 |
Review on electron stimulated surface chemical reaction mechanism for phosphor degradation Swart HC, Terblans JJ, Coetsee E, Ntwaeaborwa OM, Dhlamini MS, Nieuwoudt S, Holloway PH |
922 - 926 |
Synthesis and characterization of erbia doped metal oxide nanofibers for applications in thermophotovoltaics Bender ET, Wang R, Aljarrah MT, Evans EA, Ramsier RD |
927 - 931 |
Synthesis and characterization of nanoscale Al-Si-O gradient membranes Trouillet V, TroBe H, Bruns M, Nold E, White RG |
932 - 937 |
Effect of cross-linking ultrahigh molecular weight polyethylene: Surface molecular orientation and wear characteristics Sambasivan S, Fischer DA, Hsu SM |
938 - 942 |
Surface characterization of plasma-polymerized cyclohexane thin film Choi CR, Yeo SH, Shon HK, Kim JW, Moon DW, Jung DG, Lee TG |
943 - 949 |
Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces Brillson LJ |
950 - 954 |
Varying the Schottky barrier of thin film Mg/H : p-Si(111) contacts: Properties and applications Nienhaus H, Krix D, Glass S |
955 - 960 |
Transparent conducting zinc oxide thin films doped with aluminum and molybdenum Duenow JN, Gessert TA, Wood DM, Barnes TM, Young M, To B, Coutts TJ |
961 - 966 |
Optimized reactive ion etch process for high performance SiC bipolar junction transistors Goulakov AB, Zhao F, Perez-Wurfl I, Torvik JT, Van Zeghbroeck B |
967 - 970 |
Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition Bhatta RP, Thoms BD, Weerasekera A, Perera AGU, Alevli M, Dietz N |
971 - 975 |
Micro-optical switch device based on semiconductor-to-metallic phase transition characteristics of W-doped VO2 smart coatings Soltani M, Chaker M, Haddad E, Kruzelecky R, Margot J |
976 - 979 |
Implantation damage study in ferromagnetic Mn-implanted Si Awo-Affouda C, Bolduc M, LaBella VP |
980 - 985 |
Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F-2 remote plasmas Yun YB, Park SM, Kim DJ, Lee NE, Kim KS, Bae GH |
986 - 989 |
Etch induced sidewall damage evaluation in porous low-k methyl silsesquioxane films Kong B, Choi T, Sirard S, Kim DJ, Lee NE |
990 - 995 |
Effects of additive C4F8 during inductively coupled BCl3/C4F8/Ar plasma etching of TaN and HfO2 for gate stack patterning Ko JH, Kim DY, Park MS, Lee NE, Lee SS, Ahn J, Mok H |
996 - 998 |
Chemical structure of the bilayer Ag/Li2O cathode interface in organic light emitting diodes Joo MH, Baik MK, Choi JK, Park KH, Lee JM, Sung CJ, Kim MS, Yang JH, Kim ST |
999 - 1002 |
Electrical properties of organic light-emitting diodes by indium tin oxide chemical-mechanical polishing process Choi GW, Seo YJ, Lee KY, Lee WS |
1003 - 1012 |
Optimization of biomimetic attachment system contacting with a rough surface Kim TW, Bhushan B |
1013 - 1018 |
Virtual integrated processing for integrated circuit manufacturing Chalupa R, Jiang L, Simka H, Shankar S, Thakurta D |
1019 - 1024 |
Electrochemical planarization of copper surfaces with submicron features Chalupa R, Andryushchenko T, Han J, Ghosh T, Shankar S, Fischer P |
1025 - 1028 |
Glass nanoimprint using amorphous Ni-P mold etched by focused-ion beam Mekaru H, Kitadani T, Yamashita M, Takahashi M |
1029 - 1033 |
Annealing effect on structural, morphological, and optical properties of reactive sputtered WO3 films for mediated heterogeneous photocatalyst Prabakar K, Takahashi T, Takahashi K, Nezuka T, Nakashima T, Kubota Y, Fujishima A |
1034 - 1037 |
Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device Joshi V, Orlov AO, Snider GL |
1038 - 1041 |
Synthesis of In2O3 nanocrystal chains and annealing effect on their optical properties Ko TS, Chu CP, Chen JR, Chang YA, Lu TC, Kuo HC, Wang SC |
1042 - 1047 |
Topographical studies of nanoscale secondary structure of electrochemical anodized aluminum surface Kato H, Sugiyama T, Takemura S, Watanabe Y, Takarai Y, Ishii A, Kimura S, Okumura T, Kobayakawa D, Hiramatsu T, Nanba N, Nishikawa O, Taniguchi M |
1048 - 1051 |
Tuning metal surface diffusion on diblock copolymer films Darling SB, Hoffmann A |
1052 - 1055 |
Room temperature crystallization of indium tin oxide films on glass and polyethylene terephthalate substrates using rf plasma Ohsaki H, Suzuki M, Shibayama Y, Kinbara A, Watanabe T |
1056 - 1061 |
Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF Hwang WS, Cho BJ, Chan DSH, Yoo WJ |
1062 - 1067 |
Control of atomic layer degradation on Si substrate Nakamura Y, Tatsumi T, Kobayashi S, Kugimiya K, Harano T, Ando A, Kawase T, Hamaguchi S, Iseda S |
1068 - 1072 |
Impact of plasma damage on cobalt silicidation Kimura T, Kugimiya K, Ohchi T, Fuke K, Kataoka T, Tatsumi T, Kamide Y |
1073 - 1077 |
Formation of silicon nitride nanopillars in dual-frequency capacitively coupled plasma and their application to Si nanopillar etching Park CK, Kim HT, Kim DY, Lee NE |
1078 - 1083 |
Study of SiOxNy as a bottom antireflective coating and its pattern transferring capability Peng X, Wang Z, Dimitrov D, Boonstra T, Xue S |
1084 - 1092 |
Chemical modification of the poly(vinylidene fluoride-trifluoroethylene) copolymer surface through fluorocarbon ion beam deposition Hsu WD, Jang I, Sinnott SB |
1093 - 1097 |
Characterization of thin-film deposition in a pulsed acrylic acid polymerizing discharge Voronin SA, Bradley JW, Fotea C, Zelzer M, Alexander MR |
1098 - 1102 |
Morphological evolution of Al whiskers grown by high temperature glancing angle deposition Suzuki M, Nagai K, Kinoshita S, Nakajima K, Kimura K, Okano T, Sasakawa K |
1103 - 1107 |
Ti-Al-Si-N films for superhard coatings deposited by reactive cosputtering using Ti, Al, and Si targets Miyamura A, Yamaguchi M, Hattori K, Sato Y, Nakamura S, Shigesato Y |
1108 - 1117 |
Plasma polymerized thin films of maleic anhydride and 1,2-methylenedioxybenzene for improving adhesion to carbon surfaces Drews J, Goutianos S, Kingshott P, Hvilsted S, Rozlosnik N, Almdal K, Sorensen BF |
1118 - 1122 |
Fabrication of structurally chiral SC2O3 films and observation of Bragg resonance at deep UV wavelengths De Silvaa L, Hodgkinson I |
1123 - 1127 |
Multiply charged Al recoils with impact of 2.0 keV Si+ ions Chen X, Sroubek Z, Yarmoff JA |
1128 - 1132 |
Characterization of orientation-selective-epitaxial CeO2 layers on Si(100) substrates by x-ray diffraction and cross-sectional transmission electron microscopy Inoue T, Nakata Y, Shida S, Kato K |
1133 - 1136 |
K ion scattering from Au nanoclusters on TiO2(110) Liu GF, Karmakar P, Yarmoff JA |
1137 - 1142 |
Surface modification of SKD-61 steel by ion implantation technique Wen FL, Lo YL, Yu YC |
1143 - 1146 |
Reaction properties of NO and CO over an Ir(211) surface Nakamura I, Suzuki K, Takahashi A, Haneda M, Hamada H, Fujitani T |
1147 - 1151 |
X-ray photoemission spectroscopy and Fourier transform infrared studies of electrochemical doping of copper phthalocyanine molecule in conducting polymer Kato H, Takemura S, Watanabe Y, Ishii A, Tsuchida I, Akai Y, Sugiyama T, Hiramatsu T, Nanba N, Nishikawa O, Taniguchi M |
1152 - 1155 |
Cathodoluminescence degradation Of SiO2 : Ce,Tb powder phosphors prepared by a sol-gel process Ntwaeaborwa OM, Swart HC, Kroon RE, Botha JR, Holloway PH |
1156 - 1160 |
Chemical interaction of H and D atoms with Ag/H : p-Si(111) thin film diodes Krix D, Nunthel R, Nienhaus H |
1161 - 1165 |
Gate dielectric development for flexible electronics Joshi PC, Voutsas AT, Hartzell JW |
1166 - 1171 |
Structure and chemical properties of molybdenum oxide thin films Ramana CV, Atuchin VV, Pokrovsky LD, Becker U, Julien CM |
1172 - 1177 |
Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination Minami T, Ohtani Y, Miyata T, Kuboi T |
1178 - 1183 |
Effect of electrical properties on thermal diffusivity of amorphous indium zinc oxide films Ashida T, Miyamura A, Sato Y, Yagi T, Taketoshi N, Baba T, Shigesato Y |
1184 - 1187 |
Anisotropic microstructure of physical vapor deposited coatings caused by anisotropy in flux distribution of arriving atoms Grachev SY, Kamminga JD, Janssen GCAM, Smy T, Tichelaar FD |
1188 - 1192 |
Preparation and photocatalytic activity of TiOxNy/CdS heterojunctions Prabakar K, Takahashi T, Nezuka T, Takahashi K, Nakashima T, Kubota Y, Fujishima A |
1193 - 1197 |
Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation Miyata T, Honma Y, Minami T |
1198 - 1202 |
Optimization of the microcrystalline silicon deposition efficiency Strahm B, Howling AA, Sansonnens L, Hollenstein C |
1203 - 1207 |
B-doped be coatings for NIF target development Xu H, Moreno KA, Youngblood KP, Nikroo A, Hackenberg RE, Cooley JC, Alford CS, Letts SA |
1208 - 1213 |
Growth and electrochemical properties of Li-Ni-Co-Al oxide films Ramana CV, Zaghib K, Julien CM |
1214 - 1218 |
Tilted fiber texture in aluminum nitride thin films Deniz D, Harper JME, Hoehn JW, Chen F |
1219 - 1225 |
Surface modification of porous nanocrystalline TiO2 films for dye-sensitized solar cell application by various gas plasmas Kim YS, Yoon CH, Kim KJ, Lee YH |
1226 - 1230 |
Cathodoluminescence degradation of Y2SiO5 : Ce thin films Coetsee E, Swart HC, Terblans JJ |
1231 - 1233 |
Soft-x-ray spectroscopy experiment of liquids Guo J, Tong T, Svec L, Go J, Dong C, Chiou JW |
1234 - 1239 |
Use of getter-catalyst thin films for enhancing ion pump vacuum performances Mura M, Paolini C |
1240 - 1245 |
Sensitivity factor of the axial-symmetric transmission gauge: Deviation and long-term variation Takahashi N, Tuzi Y |
1246 - 1250 |
Quartz friction gauge for monitoring the concentration and viscosity of NaturalHy mixtures Kobayashi Y, Kurokawa A |
1251 - 1255 |
Photon stimulated desorption from copper and aluminum chambers Gomez-Goni J |
1256 - 1260 |
Benjamin Franklin and electrophotography Schein LB |
1261 - 1266 |
Process-dependent electronic states at Mo/hafnium oxide/Si interfaces Walsh S, Fang L, Schaeffer JK, Brillson LJ |
1267 - 1274 |
Velocity dependence and rest time effect on nanoscale friction of ultrathin films at high sliding velocities Tao Z, Bhushan B |
1275 - 1284 |
Adhesion properties of polymer/silicon interfaces for biological micro-/nanoelectromechanical systems applications Palacio M, Bhushan B, Ferrell N, Hansford D |
1285 - 1293 |
Nanotribological characterization of vapor phase deposited fluorosilane self-assembled monolayers deposited on polydimethylsiloxane surfaces for biomedical micro-/nanodevices Bhushan B, Cichomski M |
1294 - 1297 |
Patterning of high density magnetic nanodot arrays by nanoimprint lithography Hu W, Wilson RJ, Xu L, Han SJ, Wang SX |
1298 - 1301 |
Optimizing the dielectric performance of TiO2 thin films through control of plasma-enhanced chemical vapor deposition process conditions Yang WL, Monson A, Marino J, Wolden CA |
1302 - 1308 |
Atomic layer deposition of hafnium silicate gate dielectric layers Delabie A, Pourtois G, Caymax M, De Gendt S, Ragnarsson LA, Heyns M, Fedorenko Y, Swerts J, Maes JW |
1309 - 1311 |
Reducing SS 304/316 hydrogen outgassing to 2 x 10(-15) torr I/cm(2)S Sasaki YT |