1 - 8 |
ZnSe buffer prepared by iodine-enhanced chemical vapour deposition for Cu(In,Ga)(Se,S)(2)-based solar cells Rumberg A, Gerhard A, Jager-Waldau A, Lux-Steiner MC |
9 - 15 |
High-efficiency Cu(In,Ga)Se-2 thin-film solar cells with a novel In(OH)(3): Zn2+ buffer layer Tokita Y, Chaisitsak S, Yamada A, Konagai M |
17 - 26 |
XPS TEM and NRA investigations of Zn(Se,OH)/Zn(OH)(2) films on Cu(In,Ga)(S,Se)(2) substrates for highly efficient solar cells Eisele W, Ennaoui A, Schubert-Bischoff P, Giersig M, Pettenkofer C, Krauser J, Lux-Steiner M, Zweigart S, Karg F |
27 - 34 |
Development of large-area CIGS modules Powalla M, Dimmler B |
35 - 46 |
Highly efficient Cu(In,Ga)Se-2 mini-modules Kessler J, Wennerberg J, Bodegard M, Stolt L |
47 - 55 |
Cu(In,Ga)Se-2-based thin-film photovoltaic modules optimized for long-term performance Wennerberg J, Kessler J, Stolt L |
57 - 63 |
Effect of proton irradiation on electrical properties of CuInSe2 thin films Lee HS, Okada H, Wakahara A, Yoshida A, Ohshima T, Itoh H, Kawakita S, Imaizumi M, Matsuda S |
65 - 71 |
Cu(In,Ga)Se-2 solar cells on stainless steel substrates covered with insulating layers Satoh T, Hashimoto Y, Shimakawa S, Hayashi S, Negami T |
73 - 79 |
Effect of first-stage temperature on Cu(In,Ga)Se-2 solar cells using the evaporation of binary selenide compounds Lee DY, Ahn BT, Yoon KH, Song JS |
81 - 86 |
Electrodeposited CuInS2-based thin-film solar cells Nakamura S, Yamamoto A |
87 - 92 |
Thin films of Cu(In,Ga)Se-2 and ordered vacancy compound prepared by thermal crystallization and their photovoltaic applications Yamaguchi T, Kobata T, Niiyama S, Nakamura T, Yoshida A |
93 - 100 |
Structural and electrical properties of CuGaS2 thin films by electron beam evaporation Jeong WJ, Park GC |
101 - 107 |
Replacement of the CBD-CdS buffer and the sputtered i-ZnO layer by an ILGAR-ZnO WEL: optimization of the WEL deposition Bar M, Fischer CH, Muffler H, Zweigart S, Karg F, Lux-Steiner MC |
109 - 113 |
Effect of Cl ion implantation on electrical properties of CuInSe2 thin films Tanaka T, Yamaguchi T, Ohshima T, Itoh H, Wakahara A, Yoshida A |
115 - 120 |
Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films Tanaka T, Yamaguchi T, Wakahara A, Yoshida A, Taniguchi R, Matsuda Y, Fujishiro M |
121 - 126 |
Control of conduction band offset in wide-gap Cu(In,Ga)Se-2 solar cells Minemoto T, Hashimoto Y, Shams-Kolahi W, Satoh T, Negami T, Takakura H, Hamakawa Y |
127 - 133 |
Microdefects and point defects optically detected in Cu(In,Ga)Se-2 thin film solar cells exposed to the damp and heating Medvedkin GA, Terukov EI, Hasegawa Y, Hirose K, Sato K |
135 - 143 |
Study of point defects in CuGaSe2 single crystals by means of electron paramagnetic resonance and photoluminescence Medvedkin GA, Nishi T, Katsumata Y, Miyake H, Sato K |
145 - 153 |
Preparation of CuIn1-xGaxSe2 thin films by sputtering and selenization process Song HK, Kim SG, Kim HJ, Kim SK, Kang KW, Lee JC, Yoon KH |
155 - 162 |
Electrical and optical properties of Cu2ZnSnS4 thin films prepared by rf magnetron sputtering process Seol JS, Lee SY, Lee JC, Nam HD, Kim KH |
163 - 169 |
Improved performance of Cu(In,Ga)Se-2-based submodules with a stacked structure of ZnO window prepared by sputtering Nagoya Y, Sang B, Fujiwara Y, Kushiya K, Yamase O |
171 - 178 |
Yield issues on the fabrication of 30 cm x 30 cm-sized Cu(In,Ga)Se-2-based thin-film modules Kushiya K, Ohshita M, Hara I, Tanaka Y, Sang B, Nagoya Y, Tachiyuki M, Yamase O |
179 - 184 |
MOCVD-ZnO windows for 30 cm x 30 cm CIGS-based modules Sang BS, Nagoya Y, Kushiya K, Yamase O |
185 - 192 |
Influence of CdS window layer on 2-mu m thick CdS/CdTe thin film solar cells Nakamura K, Gotoh M, Fujihara T, Toyama T, Okamoto H |
193 - 201 |
Influence of ITO surface modification on the growth of CdS and on the performance of CdS/CdTe solar cells Heo J, Ahn H, Lee R, Han Y, Kim D |
203 - 210 |
Back contact formation usingCU(2)Te as a Cu-doping source and as an electrode in CdTe solar cells Yun JH, Kim KH, Lee DY, Ahn BT |
211 - 217 |
A new technique for large-area thin film CdS/CdTe solar cells Aramoto T, Adurodija F, Nishiyama Y, Arita T, Hanafusa A, Omura K, Morita A |
219 - 226 |
Thin CdS films prepared by metalorganic chemical vapor deposition Uda H, Yonezawa H, Ohtsubo Y, Kosaka M, Sonomura H |
227 - 234 |
Characteristics of the CdZnS thin film doped by thermal diffusion of vacuum evaporated indium films Lee JH, Song WC, Yi JS, Yoo YS |
235 - 242 |
Electrical and optical properties of CdTe films prepared by vacuum evaporation with close spacing between source and substrate Lee JH, Lim DG, Yi JS |
243 - 251 |
Quantification of losses in thin-film polycrystalline solar cells Sites JR |
253 - 259 |
Improvement in the efficiency of Cu-doped CdS/non-doped CdS photovoltaic cells fabricated by an all-vacuum process Kashiwaba Y, Isojima K, Ohta K |
261 - 269 |
III-V compound multi-junction solar cells: present and future Yamaguchi M |
271 - 276 |
Strategies for improving radiation tolerance of Si space solar cells Khan A, Yamaguchi M, Ohshita Y, Dharmaraso N, Araki K, Khanh VT, Itoh H, Ohshima T, Imaizumi M, Matsuda S |
277 - 283 |
Characterisation of a 300 x photovoltaic concentrator system with one-axis tracking Hein M, Dimroth F, Siefer G, Bett AW |
285 - 291 |
Analysis for superior radiation resistance of InP-based solar cells Yamaguchi M, Khan A, Dharmarasu N |
293 - 298 |
Metastability effects in InGaP solar cells Sun GC, Bourgoin JC, de Angelis N, Yamaguchi M, Khan A, Takamoto T, Gilard O |
299 - 305 |
Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications Bushnell DB, Ekins-Daukes NJ, Barnham KWJ, Connolly JP, Roberts JS, Hill G, Airey R, Mazzer M |
307 - 312 |
Extreme radiation hardness and light-weighted thin-film indium phosphide solar cell and its computer simulation Li GH, Yang QF, Yan ZL, Li WN, Zhang S, Freeouf J, Woodall JM |
313 - 317 |
Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates Hashimoto A, Kitano T, Nguyen AK, Masuda A, Yamamoto A, Tanaka S, Takahashi M, Moto A, Tanabe T, Takagishi S |
319 - 325 |
Analysis of generated power of ETS-VII during solar activity maximum period Fujita R, Imaizumi M, Aoyama K, Matsuda S, Tokunaga S |
327 - 333 |
Low-energy proton-induced defects in n(+)/p InGaP solar cells Dharmarasu N, Yamaguchi M, Khan A, Takamoto T, Ohshima T, Itoh H, Imaizumi M, Matsuda S |